MITSUBISHI! HIGH-FREQUENCY RECTIFIER DIODES FD200AV HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD200AV OUTLINE DRAWING Dimensions in mm 94.2 DEPTH Zz) 1.2402 = = | CATHODE wo oO af e = TYPE @\lF(av) Average forward current ---++-+++++- 200A Z| ! NAME eVRRM Repetitive peak reverse voltage ---- 3500 ~ 4500V S| L oasMAK eQrAR Reverse recovery charge *++++-*"+-600uC , ON @ 4.2 DEPTH @ Press pack type 220.2 APPLICATION High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency rectifiers MAXIMUM RATINGS Voltage class . Symbo! P. tt : ymbol arameter 70 0 30 Unit VRRM Repetitive peak reverse voltage 3500 4000 4500 Vv VRSM Non-repetitive peak reverse voltage 3500 4000 4500 Vv VR(OC} DC reverse voltage 2800 3200 3600 Vv Symbol Parameter Conditions Ratings Unit lF(RMS) RMS forward current 315 A IF(AV) Average forward current t = 60Hz, sine wave 6 = 180, Tt = 88C 200 A {FSM Surge forward current One half cycle at 60Hz, non-repetitive 10 kA Pt Current-squared, time integration | One cycle at 60Hz 4.2 x 105 As Tj Junction temperature -40 ~ +125 C Tstg Storage temperature ~40 ~ +150 C _ Mounting force required Recommended vaiue 8.8 7.8 ~ 10.8 kN _ Weight Standard value 250 g ELECTRICAL CHARACTERISTICS Symbol P Test conditi cits Unit ymbo! arameter est conditions Min Typ Max in IRAM Repetitive peak reverse current | T) = 125C, VARM Applied _ 50 mA VFM Forward voltage Tj = 125C, iFM = 630A, Instantaneous measurement _ _ 40 Vv QRR Reverse recovery charge FM * 350A, diFidt = ~30A/us, VR = 150V, _ _ 600 uC Ti = 125C Ring} Thermal resistance Junction to fin = 0.045 | C/AV ate MITSUBISHI _ ELECTRIC MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD200AV HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTICS RATED SURGE FORWARD CURRENT 104 10 5 Z < 3 5 8 ; e G 108 & tt 7 > 6 x 5 o = a oO 3 & 10: oO ef z 2 5 wn 10! 0 0 20 40 60 80 100 1 23 5740 2030 5070100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) MAXIMUM POWER DISSIPATION CHARACTERISTICS 10 23 57101 0.050 2 1000 : RESISTIVE, INDUCTIVE LOAD oo | 3 5 i 0.040 = 800 - > ft [pC clAcurT Ww 3 y 9 0.030 & 600 Ih a = LY [SINGLE-PHASE | 2. @ i / HALF WAVE, = 0.020 & 400 / FULLWAVE. 4 2 rs RECTIFICATION 2 = [eircurr FT] fF 0.010 200 Yo THREE-PHASE an = f/\_| HALF WAVE, FULL WAVE __| |_| RECTIFICATION CIRCUIT 0 103 23 5710223 5710-123 57100 9 700200 300400 500 TIME (S) AVERAGE FORWARD CURRENT (A) REVERSE RECOVERY CHARGE, ALLOWABLE FIN TEMPERATURE REVERSE RECOVERY TIME VS. VS. AVERAGE FORWARD CURRENT JUNCTION TEMPERATURE = 3 130 RESISTIVE, INDUCTIVE: LOAD Q ~ 10 SINGLE-PHASE =e 5 120 ~~ HALF WAVE, FULL WAVE w~ 3 AV. 440 RECTIFICATION CIRCUIT Ou 2 <E IFM gi uu tr 102 diF/dt NDC CIRCUIT & 100 N Wr] OF 7 sa - >= t < 90 fe lem = 350A _ f ivam rr N\ 58 diF/ch = -30A/us inn 2 | Ow vam = 150V Qra = Lexie a * [TA im & 491 2 e THREE-PHASE cw 7 Z 70 THALF WAVE, we 5 u- FULL WAVE aS 3 AV. 60 | RECTIFICATION Wi ih 2 . ciRCUIT | | th 40 595 100 200 300 400 0 20 40 60 80 100 120 140 160 AVERAGE FORWARD CURRENT (A) JUNCTION TEMPERATURE (C) 2-10 ate MISuasH ELECTRIC REVERSE RECOVERY CHARGE (uC), REVERSE RECOVERY TIME (iS) REVERSE RECOVERY CHARGE, REVERSE RECOVERY TIME VS. FORWARD CURRENT 103 7 -MAX. 5 av 3 2 1EM diF/dt 108 3 : iF /dt = ! Shy, a Ov RM . qoReD in US 3 Tis 128C Ora = tfexinm 2 10 7 5 3 2 MAX. AV. 40 108 23 5710223 5710323 57104 FORWARD CURRENT (A) MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD200AV HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE REVERSE RECOVERY CHARGE, REVERSE RECOVERY TIME VS. RATE OF DECREASE OF REVERSE CURRENT 108 7 5 MAX. 3 AV, 2 102 7 Fr lem = 350A SICVRM = 150V T= 125C 10! 7 5 3 3 AV. REVERSE RECOVERY CHARGE (uC), REVERSE RECOVERY TIME (uS) wo 10 10 23 5710123 57102 23 57103 RATE OF DECREASE OF REVERSE CURRENT (A/uS) MITSUBISHI 2-41