MSD100
MSD100-Rev 1 www.microsemi.com
Dec, 2009 1/3
Module Type
TYPE VRRM VRSM
MSD100 – 08
MSD100 – 12
MSD100 – 16
MSD100 – 18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol Conditions Values Units
ID Tc=100℃ 100 A
IFSM t=10mS Tv
j
=45℃920 A
i2t t=10mS Tv
j
=45℃4200 A2s
Visol a.c.50Hz;r.m.s.;1min 3000 V
Tvj -40 to 150 ℃
Tstg -40 to 125 ℃
Mt To terminals(M6) 5±15% Nm
Ms To heatsink(M6) 5±15% Nm
Weight Module 230 g
Ther m a l Ch a racter istic s
Symbol Conditions Values Units
Rth
(j
-c
)
Per diode 0.9 ℃
/
W
Rth
(
c-s
)
Module 0.03 ℃
/
W
Electrical Characteristics
Circuit
Glass Passivated Three
Phase Rectifier Bridge
VRRM 800 to 1800V
ID 100 Amp
Features
y Thre e phase bridge rectifier
y Blocking voltage: 800 to 1800V
y Heat transfer through aluminum oxide DCB
ceramic isolated m etal bas eplate
y Glass passivated chip
Applications
y Three phase rectifiers for power supplies
y Rectifiers for DC motor field supplies
y Battery charger rectifiers
y In
p
ut rectifiers for variable fre
q
uenc
y
drives
-
+
~
~
~
MSD
Symbol Conditions Values Units
VFM T=25℃ IFM =300
A
1.9 V
IRD Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
≤0.3
≤5
mA
mA
MSD100
MSD100-Rev 1 www.microsemi.com
Dec, 2009 2/3
Performance Curves
Fig1. Forward Characteristics
Fig3. Transient thermal impedance
Fi
2. Power dissi
p
ation
Fig4. Max Non-Repetitive Forward Surge
Current
Fig5.Forw ard Current Derating Curve
Zth(j-C)
Typ.
25℃
125℃
0 VF 0.5 1.0 1.5 2.0 V
0.001 0.01 0.1 1 10 100 S
1 10 cycles 100
1000
500
0
1500
A
0 Tc 50 100 150°C
200
A
160
120
0
80
40
ID
50Hz
1.0
℃/ W
0
0.5
300
A
150
IF
0
W
0
250
125
Pvtot
0 ID 50 100 A
MSD100
MSD100-Rev 1 www.microsemi.com
Dec, 2009 3/3
Package Outline Information
CASE-M3
Dimensions in mm