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P01xxxN
March 2000 - Ed: 1A
SENSITIVE SCR
Symbol Parameter Value Unit
IT(RMS) * RMS on-state current (180°conduction angle) Ta= 70°C 0.8 A
IT(AV) * Mean on-state current (180°conduction angle) Ta= 70°C 0.5 A
ITSM Non repetitive surgepeak on-state current
(Tjinitial = 25°C) tp = 8.3 ms 8 A
tp = 10 ms 7
I2tI
2
t Value for fusing tp = 10 ms 0.24 A2s
dI/dt Critical rate of rise of on-state current
IG=10mA di
G/dt = 0.1 A/µs. 30 A/µs
Tstg
TjStorage temperature range
Operating junction temperature range - 40, + 150
- 40, + 125 °C
Tl Maximum lead temperature forsoldering during 10s 260 °C
* :With 5cm2copper (e=35µm) surface under tab.
ABSOLUTE MAXIMUM RATINGS
SOT223
(Plastic)
nIT(RMS) = 0.8A
nVDRM /V
RRM= 200V to 600V
FEATURES
Symbol Parameter Voltage Unit
BDM
V
DRM
VRRM Repetitive peak off-state voltage
Tj= 125°CR
GK =1K 200 400 600 V
High performance planar technology. These parts
are intended for general purpose applications
where low gate sensitivity is required.
DESCRIPTION
A
A
K
G
P01xxxN
PG (AV)= 0.1 W PGM = 2W (tp = 20 µs) IGM = 1 A (tp = 20 µs)
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth(j-a) Junction to ambient * 60 °C/W
Rth(j-l) Junction to tab forDC 30 °C/W
* :With 5cm2copper (e=35µm) surface under tab.
THERMAL RESISTANCES
Symbol Test Conditions Sensitivity Unit
09 02 11
IGT VD=12V (DC) RL=140ΩTj= 25°C MIN - - 4 µA
MAX 1 200 25
VGT VD=12V (DC) RL=140ΩTj= 25°C MAX 0.8 V
VGD VD=VDRM RL=3.3kΩRGK =1KΩTj= 125°C MIN 0.1 V
VGRM IRG =10µATj= 25°C MIN 8 V
tgd VD=VDRM ITM=3xI
T(AV)
dIG/dt = 0.1A/µsI
G
= 10mA Tj= 25°C TYP 0.5 µs
IHIT= 50mA RGK =1KΩTj= 25°C MAX 5 mA
ILIG=1mA RGK =1KΩTj= 25°C MAX 6 mA
VTM ITM= 1.6A tp= 380µsTj= 25°C MAX 1.95 V
IDRM
IRRM VD=V
DRM RGK =1KΩ
V
R=V
RRM Tj= 25°C MAX B/D: 1 - M: 10 µA
Tj= 125°C MAX 100 µA
dV/dt VD= 67%VDRM RGK =1KΩTj= 125°C MIN 50 75 80 V/µs
tq ITM=3xI
T(AV)V
R
=35V
dI/dt=10A/µs tp=100µs
dV/dt=10V/µsV
D
= 67%VDRM
RGK =1KΩ
Tj= 125°C MAX 200 µs
ELECTRICAL CHARACTERISTICS
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0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.2
0.4
0.6
0.8
1P(W)
360 O
= 180o
= 120o
=90
o
=60
o
=30
o
DC
I (A)
T(AV)
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
0 102030405060708090100110120130
0
0.2
0.4
0.6
0.8
1I(A)
T(AV)
= 180o
DC
Tamb ( C)
o
Fig.3 : Average on-state current versus tab tem-
perature.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40 -20 0 20 40 60 80 100 120 140
Igt[Tj]
Igt[Tj=25 C]
oIh[Tj]
Ih[Tj=25 C]
o
Tj( C)
o
Fig.5 : Relative variation of gate trigger current
and holding current versus junction temperature.
0 20406080100120140
0
0.2
0.4
0.6
0.8
1P (W) Ttab ( C)
o
Rth(j-a)
Tamb ( C)
o
-115
-100
-95
-120
-105
-125
-110
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Ttab).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00 Zth(j-a)/Rth(j-a)
tp(s)
Standard foot print , e(Cu)=35
m
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulseduration.
1 10 100 1,000
0
1
2
3
4
5
6
7
8Tj initial = 25 C
o
Number of cycles
I (A)
TSM
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
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110
0.1
1
10
100 I (A). I2t(A
2s)
TSM
Tj initial = 25 C
o
ITSM
tp(ms)
I2t
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.
00.511.522.533.544.555.5
0.1
1
10 I(A)
TM
Tj initial
25 C
o
Tj max
V (V)
TM
Tj max
Vto =0.95V
Rt =0.600
Fig.8 : On-state characteristics (maximum val-
ues).
1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
0.1
1.0
5.0
Ih(Rgk)
Ih(Rgk=1k )
Tj=25 C
o
Rgk( )
Fig.9 : Relative variation ofholding current versus
gate-cathode resistance (typical values).
P01xxxN
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PACKAGE MECHANICAL DATA
SOT223 (Plastic)
A
A1
B
e1
D
B1
HE
e
c
V
REF. DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.80 0.071
A1 0.02 0.001
B 0.60 0.70 0.80 0.024 0.027 0.031
B1 2.90 3.00 3.10 0.114 0.118 0.122
c 0.24 0.26 0.32 0.009 0.010 0.013
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.3 0.090
e1 4.6 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10°max
FOOT PRINT
P01 02 A N 5xA4
SCR Planar
Current Sensitivity Voltage
Package
N = SOT223
Tape & Reel
ORDERING INFORMATION
P01xxxN
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change without notice.This publication supersedes and replaces all information previously supplied.
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Type Marking Package Weight Delivery mode Base qty
P0102BN P2B
SOT223 0.11g Tape & Reel 1000
P0109BN P9B
P0111BN P1B
P0102DN P2D
P0109DN P9D
P0111DN P1D
P0102MN P2M
P0109MN P9M
P0111MN P1M
MARKING
