HEXFET® Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
02/13/12
VDSS =20V
RDS(on) = 0.135Ω
IRF7501PbF
Description
Parameter Max. Units
VDS Drain-Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.4
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.9 A
IDM Pulsed Drain Current 19
PD @TA = 25°C Maximum Power Dissipation1.25 W
PD @TA = 70°C Maximum Power Dissipation 0.8 W
Linear Derating Factor 0.01 W/°C
VGSM Gate-to-Source Voltage Single Pulse tp<10μs16V
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ , TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Absolute Maximum Ratings
Parameter Max. Units
RθJA Maximum Junction-to-Ambient 100 °C/W
Thermal Resistance
Micro8
D1
D1
D
2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
lGeneration V Technology
lUlrtra Low On-Resistance
lDual N-Channel MOSFET
lVery Small SOIC Package
lLow Profile (<1.1mm)
lAvailable in Tape & Reel
lFast Switching
lLead-Free
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
PD - 95345A
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IRF7501PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V
trr Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = 1.7A
Qrr Reverse Recovery Charge ––– 37 56 nC di/dt = 100A/μs
Source-Drain Ratings and Characteristics
––– –––
––– ––– 19
1.25
A
S
D
G
Surface mounted on FR-4 board, t ≤10sec
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
ISD ≤ 1.7A, di/dt ≤ 66A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Pulse width ≤ 300μs; duty cycle ≤ 2%
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.085 0.135 VGS = 4.5V, ID = 1.7A
––– 0.120 0.20 VGS = 2.7V, ID = 0.85A
VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250μA
gfs Forward Transconductance 2.6 ––– ––– S VDS = 10V, ID = 0.85A
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
QgTotal Gate Charge ––– 5.3 8.0 ID = 1.7A
Qgs Gate-to-Source Charge ––– 0.84 1.3 nC VDS = 16V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.2 3.3 VGS = 4.5V, See Fig. 9
td(on) Turn-On Delay Time ––– 5.7 ––– VDD = 10V
trRise Time ––– 24 ––– ID = 1.7A
td(off) Turn-Off Delay Time ––– 15 ––– RG = 6.0Ω
tfFall Time ––– 16 ––– RD = 5.7Ω
Ciss Input Capacitance ––– 260 ––– VGS = 0V
Coss Output Capacitance ––– 130 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 8
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
μA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
IRF7501PbF
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Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1 1 10
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
20μs PULSE WIDTH
T = 25°C
A
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
J
0.01
0.1
1
10
100
0.1 1 10
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
20μs PULSE WIDTH
T = 150°C
J
0.1
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20μs PULSE WIDTH
DS
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
IRF7501PbF
4www.irf.com
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
( Ω )
Fig 5. Normalized On-Resistance
Vs. Temperature
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = 4.5V
GS
I = 1.7A
D
0.0
0.2
0.4
0.6
0.8
0246
A
I , Drain Current (A)
D
V = 2.5V
GS
V = 5.0V
GS
0.05
0.07
0.09
0.11
0.13
2345678
A
R , Drain-to-Source On Resistance
DS(on)
(
GS
V , Gate-to-Source Voltage (V)
I = 2.4A
D
RDS(on), Drain-to-Source On Resistance
( Ω )
IRF7501PbF
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Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
100
200
300
400
500
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0246810
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 9
I = 1.7A
V = 16V
D
DS
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7501PbF
6www.irf.com
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 12a. Switching Time Test Circuit
Fig 12b. Switching Time Waveforms
Fig 11a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
Fig 11b. Gate Charge Test Circuit
D.U.T. VDS
ID
IG
3mA
VGS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
IRF7501PbF
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Peak Diode Recovery dv/dt Test Circuit
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13 For N Channel HEXFETS
IRF7501PbF
8www.irf.com
Micro8 Part Marking Information
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES MILLIMETERS
MIN MAX MIN MAX
A
0.10 (.004)
0.25 (.010) M A M
H
1 2 3 4
8 7 6 5
D
- B - 3
3
E
- A -
e
6X
e 1
- C -
B 8X
0.08 (.003) M C A S B S
A 1 L
8X
C
8X
θ
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
A .036 .044 0.91 1.11
A1 .004 .008 0.10 0.20
B .010 .014 0.25 0.36
C .005 .007 0.13 0.18
D .116 .120 2.95 3.05
e .0256 BASIC 0.65 BASIC
e1 .0128 BASIC 0.33 BASIC
E .116 .120 2.95 3.05
H .188 .198 4.78 5.03
L .016 .026 0.41 0.66
θ
0° 6° 0° 6°
DIM
LEAD ASSIGNMENTS
SINGLE DUAL
D D D D D1 D1 D2 D2
S S S G S1 G1 S2 G2
1 2 3 4 1 2 3 4
8 7 6 5 8 7 6 5
RECOMMENDED FOOTPRINT
1.04
( .041 )
8X
0.38
( .015 ) 8X
3.20
( .126 )
4.24
( .167 )
5.28
( .208 )
0.65
( .0256 )6X
LOT CODE (XX)
E X AMP L E : T H I S I S AN I R F 7 501
PART NUMBER
P = DE S IGNAT E S L E AD - F R E E
PRODUCT (OPTIONAL)
W = WE E K
Y = YEAR
DAT E CODE (Y W) - S ee tabl e bel ow
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
YEAR Y
WOR K
WEEK W
92009
52005
2003
2002
2001
2004
3
2
1
4
2007
2006
2008
7
6
8
2010 0
03
02
01
04
C
B
A
D
26
24
25
Z
X
Y
B2002 B28
WW = (27-52) IF PRECEDED BY A LET T ER
YEAR
2001
Y
A
WEEK
WOR K
27
W
A
K2010
F2006
2004
2003
2005
D
C
E
2008
2007
2009
H
G
J
X50
30
29
D
C
51
52
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF7501PbF
www.irf.com 9
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2012
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.