PD - 95345A IRF7501PbF HEXFET(R) Power MOSFET l l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS =20V RDS(on) = 0.135 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGSM VGS dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse tp<10s Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 20 2.4 1.9 19 1.25 0.8 0.01 16 12 5.0 -55 to + 150 240 (1.6mm from case) Units V A W W W/C V V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. Units 100 C/W All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . www.irf.com 1 02/13/12 IRF7501PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.70 2.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.041 0.085 0.120 --- --- --- --- --- --- 5.3 0.84 2.2 5.7 24 15 16 260 130 61 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.135 VGS = 4.5V, ID = 1.7A 0.20 VGS = 2.7V, ID = 0.85A --- V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 0.85A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, V GS = 0V, TJ = 125C 100 VGS = 12V nA -100 VGS = -12V 8.0 ID = 1.7A 1.3 nC VDS = 16V 3.3 VGS = 4.5V, See Fig. 9 --- VDD = 10V --- ID = 1.7A ns --- RG = 6.0 --- R D = 5.7 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz, See Fig. 8 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- 1.25 --- --- 19 --- --- --- --- 39 37 1.2 59 56 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2% ISD 1.7A, di/dt 66A/s, VDD V(BR)DSS, Surface mounted on FR-4 board, t 10sec max. junction temperature. ( See fig. 10 ) TJ 150C 2 www.irf.com IRF7501PbF 100 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V 1 0.1 1.5V 20s PULSE WIDTH TJ = 25C A 0.01 0.1 1 I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 10 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP TOP 10 1 1.5V 0.1 10 VDS , Drain-to-Source Voltage (V) 1 10 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 ISD , Reverse Drain Current (A) 100 I D , Drain-to-Source Current (A) 20s PULSE WIDTH TJ = 150C A 0.01 0.1 10 TJ = 150C TJ = 25C 1 V DS = 10V 20s PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 4.0 10 TJ = 150C TJ = 25C 1 0.1 0.4 VGS = 0V 0.6 0.8 1.0 1.2 1.4 1.6 A 1.8 VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF7501PbF I D = 1.7A RDS(on) , Drain-to-Source On Resistance ( ) R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 0.8 0.6 0.4 V GS 0.2 VGS = 5.0V 0.0 A 0 80 100 120 140 160 2 TJ , Junction Temperature (C) 4 6 I D , Drain Current (A) Fig 6. Typical On-Resistance Vs. Drain Current Fig 5. Normalized On-Resistance Vs. Temperature R DS(on) , Drain-to-Source On Resistance ( ) ( = 2.5V 0.13 0.11 0.09 I D = 2.4A 0.07 0.05 2 3 4 5 6 7 8 A V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 www.irf.com A IRF7501PbF 500 -VGS , Gate-to-Source Voltage (V) 400 C, Capacitance (pF) 10 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 300 Coss 200 Crss 100 0 1 10 100 A I D = 1.7A VDS = 16V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 9 0 0 VDS , Drain-to-Source Voltage (V) 2 4 6 8 10 Q G , Total Gate Charge (nC) Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 0.01 1 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 A IRF7501PbF Current Regulator Same Type as D.U.T. 50K QG QGS .2F 12V .3F QGD D.U.T. + V - DS VGS VG 3mA IG Charge ID Current Sampling Resistors Fig 11a. Basic Gate Charge Waveform Fig 11b. Gate Charge Test Circuit V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 12a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 12b. Switching Time Waveforms 6 www.irf.com IRF7501PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13 For N Channel HEXFETS www.irf.com 7 IRF7501PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS DIM D 3 -B- 8 7 6 5 3 H E 0.25 (.010) -A- M A M D D D D D1 D1 D2 D2 8 7 6 5 8 7 6 5 SINGLE DUAL 1 2 3 4 1 2 3 4 INCHES MILLIMETERS MIN MAX MIN A .036 .044 0.91 MAX 1.11 A1 .004 .008 0.10 0.20 B .010 .014 0.25 0.36 C .005 .007 0.13 0.18 D .116 .120 2.95 3.05 e .0256 BASIC 0.65 BASIC e1 .0128 BASIC 0.33 BASIC E .116 .120 2.95 3.05 H .188 .198 4.78 5.03 e L .016 .026 0.41 0.66 6X 0 6 1 2 3 4 S S S G S1 G1 S2 G2 0 6 e1 RECOMMENDED FOOTPRINT 1.04 ( .041 ) 8X A -CB 0.10 (.004) A1 8X 0.08 (.003) M C A S L 8X B S C 0.38 8X ( .015 ) 8X 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.65 6X ( .0256 ) 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. Micro8 Part Marking Information EXAMPLE: THIS IS AN IRF7501 LOT CODE (XX) DAT E CODE (YW) - S ee table below Y = YEAR W = WEEK P = DES IGNAT ES LEAD - FREE PRODUCT (OPTIONAL) PART NUMBER WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 1 2 3 4 5 6 7 8 9 0 WORK WEEK WW = (27-52) IF PRECEDED BY A LET T ER W YEAR Y 01 02 03 04 A B C D 24 25 26 X Y Z 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF7501PbF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/2012 www.irf.com 9