AON6210 30V N-Channel MOSFET General Description Product Summary The AON6210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS RDS(ON) (at VGS=10V) 30V 85A < 1.8m RDS(ON) (at VGS = 4.5V) < 2.5m ID (at VGS=10V) 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25C Power Dissipation B TA=25C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev0 : Jan 2010 IAS, IAR 85 A EAS, EAR 361 mJ 83 Steady-State Steady-State W 33 2.3 RJA RJC www.aosmd.com W 1.5 TJ, TSTG Symbol t 10s A 22 PDSM TA=70C A 28 PD TC=100C V 350 IDSM TA=70C 20 67 IDM TA=25C Continuous Drain Current Units V 85 ID TC=100C Maximum 30 -55 to 150 Typ 14 40 1 C Max 17 55 1.5 Units C/W C/W C/W Page 1 of 6 AON6210 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V VDS=30V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS ID=250A 1.1 ID(ON) On state drain current VGS=10V, VDS=5V 350 VGS=10V, ID=20A TJ=125C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s A 100 nA 1.6 2.1 V 1.5 1.8 2.1 2.5 2 2.5 A 110 0.7 m m S 1 V 85 A 4200 5250 6300 pF 1500 2240 3000 pF 95 160 270 pF 0.5 1 1.5 60 80 100 nC 30 38 45 nC 8 10 12 nC 7 13 18 nC VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s Units V 1 TJ=55C Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ 12 ns 7 ns 53 ns 14 ns 20 25 30 70 88 105 ns nC A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Jan 2010 www.aosmd.com Page 2 of 6 AON6210 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 140 10V 120 100 3V 80 ID(A) ID (A) 100 VDS=5V 120 6V 4V 60 80 60 125C 40 40 20 25C 20 VGS=2.5V 0 0 0 1 2 3 4 1 5 4 Normalized On-Resistance RDS(ON) (m) 2 2.5 3 3.5 4 2 3 VGS=4.5V 2 1 VGS=10V 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 5 ID=30A 1.0E+01 4 40 1.0E+00 IS (A) RDS(ON) (m) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 125C 2 125C 1.0E-01 1.0E-02 25C 1.0E-03 1 1.0E-04 25C 1.0E-05 0.0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Jan 2010 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6210 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 7000 Capacitance (pF) VGS (Volts) 6 4 2 4000 Coss 3000 2000 Crss 0 0 20 40 60 Qg (nC) Figure 7: Gate-Charge Characteristics 80 0 10s RDS(ON) limited 10s 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100s 1ms 10ms 10.0 DC 1.0 TJ(Max)=150C TC=25C 0.1 0.0 0.01 0.1 1 17 5 2 10 120 80 1 VDS (Volts) 10 100 40 0.0001 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 0.001 0.01 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=1.5C/W PD 0.1 Ton 0.01 0.00001 0.1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=150C TC=25C 160 Power (W) 100.0 5 200 1000.0 ID (Amps) 5000 1000 0 ZJC Normalized Transient Thermal Resistance Ciss 6000 VDS=15V ID=20A 8 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Jan 2010 www.aosmd.com Page 4 of 6 AON6210 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100C 100 TA=150C TA=125C 10 80 60 40 20 0 1 10 100 1000 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note F) TA=25C 80 Power (W) 1000 60 40 17 5 2 10 100 10 20 1 0.00001 0 0 25 50 75 100 125 150 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (C) Figure 14: Current De-rating (Note F) ZJA Normalized Transient Thermal Resistance 25 10000 100 Current rating ID(A) 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJA=55C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Jan 2010 www.aosmd.com Page 5 of 6 AON6210 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: Jan 2010 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 6 of 6