P-Channel Enhancement-Mode MOS Transistors, VP0610 Series CORPORATION a VPO610E /VPO610L / VPO610T FEATURES ORDERING INFORMATION @ P-Channel Equivalent to 2N7000 Series Part Package Temperature Range @ Available in S e Mount SOT-23 ; @ Low tpsien) surface Mount SOT-23 e100 -- VPOB10E~-Hermetic TO-206AC 55C to +150C e@By.... . : : - . . . , : : : - 60V VP0610L Plastic TO-92 -55C to +150C eres sense reer rere secs ceecurusesrues VPO610T Surface Mount SOT-23 -5BC to +150C APPLICATIONS XVP0610 Sorted chips in carriers -55C to +150C @ Switching @ Amplification PIN CONNECTIONS gn T0-52 (T0-226AA) PRODUCT MARKING (TO-206AC) TOP VIEW VPO610T vos M 1 BOTTOM VIEW BOTTOM VIEW Fl fra) 2LJ Ls 1 SOURCE 1 SOURCE 1 DRAIN CD7 2 GATE 2 GATE 2 SOURCE 3 DRAIN & CASE 3 DRAIN 3 GATE ABSOLUTE MAXIMUM RATINGS (Ta = 25C unless otherwise noted) LIMITS SYMBOL PARAMETERS/TEST CONDITIONS 5 UNITS VP0610E VPO610L VP0610T Vos Drain-Source Voltage -60 -60 -60 Vv Ves Gate-Source Voltage +20 +30 +30 . , Ta = 25C -0.25 -0.18 -0.12 Ib Continuous Drain Current Ta = 100C -0.15 -0.11 -0.07 A DM Pulsed Drain Current! 1 -0.8 -0.4 . Ta = 25C 15 0.80 0.36 Pp Power Dissipation = W Ta = 100C 0.6 0.32 0.14 Ty, Tstg Operating Junction & Storage Temperature Range -55 to 150 6 Te Lead Temperature (1/16" from case for 10 sec.) 300 THERMAL RESISTANCE RATINGS LIMITS SYMBOL THERMAL RESISTANCE UNITS VPOS10E VPO610L VPO610T Rina Junction-to-Ambient 400 156 350 "CMW Pulse width limited by maximum junction temperature. Reference Tc for all tests. Me 14844322 0001061 159 MF 27 CORPORATION calogic VPO610E /VPO610L /VPO610T ELECTRICAL CHARACTERISTICS? LIMITS b VP0610E VPO610L VP0610T SYMBOL PARAMETER TYP UNITS TEST CONDITIONS MIN | MAX | MIN | MAX | MIN | MAX STATIC Drain-Source Breakdown Vv -70 -60 -60 -60 Vas = OV, Ip =-1 (8R)DSS Voltage V Gs lo OA Vasithy Gate Threshold Voltage 2 -1 -35 -1 -3.5 -1 35 Vos = Vas, Ip = -1mA +H +10 +10 +10 Vos = OV, Vas = 20V less Gate-Body Leakage nA +5 Ty = 125C | Zero Gate Voltage Drain | ~ 02 a a aq Vos = -4BV, Vas = OV DSS Current HA 2, -0.2 -200 -200 -200 Ta = 125C ID(ony On-State Drain Current | -700 | -600 -600 -220 mA | Vos =-10V, Vas = -10V Drain-Source 8 10 10 10 0 Ves = -10V, Ip = -0.5A TOS(ON) 7 c On-Resistance 15 20 20 20 | Ty = 125C grs Foran suctance 135 | 80 80 70 mS | Vos =-10V, Ip =-0.5A gos | Conductance | 400 US | Vos=-10V, Ip =-0.2A DYNAMIC Ciss Input Capacitance 15 60 60 60 Coss Output Capacitance 10 25 25 25 pF Vos = -25V, Vas = OV, f= 1MHz Reverse Transfer Crss Capacitance 8 5 5 5 SWITCHING 400") | tum-On Time 8 10 10 10 Von = -25V, Ri. = 1330, fo=-0.18A t 10 15 15 15 Vaen = -10V, Re = 252 ns taOrF) 7 15 15 15 (Switching time is essentially Turn-Off Time independent of operating temperature) tr 8 20 20 20 Notes: a. Ta = 25C unless otherwise noted Tc = 25C for VPO610E. b. For design aid only, not subject to production testing. c. Pulse test; PW = 300us, duty cycle <2%. MM 1444322 00010b2 O95 = 9-73