MEA 300-06 DA MEK 300-06 DA MEE 300-06 DA Fast Recovery Epitaxial Diode (FRED) Module VRRM = 600 V IFAVM = 304 A trr = 250 ns Preliminary data VRSM V 600 VRRM Type V 600 2 MEA 300-06DA 1 2 MEK 300-06DA 3 1 2 1 MEE 300-06DA 3 1 2 3 3 Symbol Test Conditions IFRMS IFAVM yy IFRM TC = 75 C TC = 75 C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM Maximum Ratings 430 304 1640 A A A IFSM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2400 2640 A A TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2160 2380 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 28800 29300 A2s A2s TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 23300 23800 A2s A2s -40...+150 -40...+125 110 C C C Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 I2t TVJ = 45C; TVJ Tstg TSmax Ptot TC = 25C VISOL 50/60 Hz, RMS t = 1 min t=1s IISOL 1 mA Md Mounting torque (M6) Terminal connection torque (M6) dS dA a Creeping distance on surface Strike distance through air Maximum allowable acceleration 875 W 3000 3600 V~ V~ Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders 2.25-2.75/20-25 Nm/lb.in. 4.50-5.50/40-48 Nm/lb.in. Weight 12.7 9.6 50 mm mm m/s2 150 g Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Test Conditions IR TVJ = 25C TVJ = 25C TVJ = 125C VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM VF IF = 150 A; TVJ TVJ TVJ TVJ IF = 260 A; Characteristic Values (per diode) typ. max. = 125C = 25C = 125C = 25C VT0 rT For power-loss calculations only RthJH RthJC DC current DC current trr IRM 12 3 80 IF = 300 A VR= 300 V -di/dt = 400 A/ms TVJ = 100C TVJ = 25C TVJ = 100C 250 IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1.05 1.27 1.19 1.36 V V V V 0.85 1.34 V mW 0.228 0.143 K/W K/W 300 44 66 Dimensions in mm (1 mm = 0.0394") mA mA mA ns A A 749 Symbol 1-2 http://store.iiic.cc/ MEA 300-06 DA MEE 300-06 DA MEK 300-06 DA 20 T = 100C VJ VR = 300V C 500 A 400 200 T = 100C VJ VR = 300V A IRM Qr 15 IF 150 300 TVJ=125C TVJ=25C 200 IF= 600A 100 IF= 300A IF= 150A IF= 600A IF= 300A IF= 150A 10 5 50 100 0 0.0 0.4 0 100 1.2 V 1.6 VF 0.8 Fig. 1 Forward current IF versus max. voltage drop VF per leg Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 400 1.4 V 3.0 s 2.5 tfr 2.0 VFR IF= 600A IF= 300A IF= 150A 30 1.5 20 1.0 10 0.5 250 Qr 0.4 200 40 TVJ= 100C IF = 300A 40 IRM 0 ms 1000 600 A/ 800 -diF/dt VFR 300 0.6 400 tfr 50 1.0 0.8 200 60 350 trr 0 Fig. 3 Typ. peak reverse current IRM versus -diF/dt TVJ= 100C VR = 300V ns 1.2 Kf 0 A/ms 1000 -diF/dt 80 120 C 160 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ 600 A/ 800 ms 1000 -diF/dt 0 0 200 400 0.0 600 A/ 800 ms 1000 diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 5 Typ. recovery time trr versus -diF/dt 0.25 Constants for ZthJS calculation: K/W i 0.20 1 2 3 4 0.15 ZthJS thJH Rthi (K/W) ti (s) 0.002 0.008 0.054 0.164 0.08 0.024 0.112 0.464 0.10 0.05 0.00 0.001 0.01 0.1 1s 814 Fig. 7 Transient thermal impedance junction to heatsink 10 t (c) 2000 IXYS All rights reserved 2-2 http://store.iiic.cc/