1
Dual IGBTMOD™
KA-Series Module
200 Amperes / 1700 Volts
CM200DU-34KA
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
1
Description:
Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system
assembly and thermal
management.
Features:
□Low Drive Power
□Low VCE(sat)
□Discrete Super-Fast Recovery
Free-Wheel Diode
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□AC Motor Control
□Motion/Ser vo Control
□UPS
□Welding Power Supplies
□Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-34KA is
a 1700V (VCES), 200 Ampere
Dual IGBTMOD™ Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 200 34
Outline Drawing and Circuit Diagram
N
P
G1
G2
E2
E1
E2
G2
C1
E2
G1
E1
C2E1
C1
E2
C2E1
2525
L
C
CM
LABEL
V - THICK x W - WIDE
TAB (4 PLACES)
T - (4 TYP.)
X
R
H
H
J
QQ
KKK
M
F
G
F
E
D
C
B
A
S - NUTS
(3 TYP)
TC Measured
Point
Dimensions Inches Millimeters
A4.33 110.0
B3.15 80.0
C1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F0.83 21.0
G0.16 4.0
H0.24 6.0
J0.59 15.0
K0.55 14.0
Dimensions Inches Millimeters
M0.33 8.5
N0.10 2.5
P0.85 21.6
Q0.98 25.0
R0.86 21.75
SM6 M6
T0.26 Dia. 6.5 Dia.
V0.02 0.5
W0.110 2.79
X1.08 27.35
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CM200DU-34KA
Dual IGBTMOD™ KA-Series Module
200 Amperes / 1700 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200DU-34KA Units
Junction Temper ature Tj-40 to 150 °C
Storage Temper ature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1700 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC200 Amperes
Peak Collector Current ICM 400* Amperes
Emitter Current** (Tc = 25°C) IE200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc1100 Watts
Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight –580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 3500 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 4.0 5.5 7.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C– 3.2 4.0 Volts
IC = 200A, VGE = 15V, Tj = 125°C– 3.8 – Volts
Total Gate Charge QGVCC = 1000V, IC = 200A, VGE = 15V – 900 – nC
Emitter-Collector V oltage** VEC IE = 200A, VGE = 0V, Tj = 25°C– –4.6 Volts
IE = 200A, VGE = 0V, Tj = 125°C– 2.2 – Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies ––29.0 nf
Output Capacitance Coes VCE = 10V, VGE = 0V – – 4.8 nf
Re verse Transfer Capacitance Cres ––1.5 nf
Resistive Tur n-on Delay Time td(on) VCC = 1000V, IC = 200A, – – 600 ns
Load Rise Time trVGE1 = VGE2 = 15V, – – 200 ns
Switch Tur n-off Delay Time td(off) RG = 1.6⍀,––700 ns
Times F all Time tfInductive Load – – 800 ns
Diode Reverse Recovery Time** trr Switching Operation – – 600 ns
Diode Reverse Recovery Charge** Qrr IE = 200A – 9.6 – µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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3
CM200DU-34KA
Dual IGBTMOD™ KA-Series Module
200 Amperes / 1700 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)QPer IGBT 1/2 Module – – 0.11 °C/W
Thermal Resistance, Junction to Case Rth(j-c)RPer FWDi 1/2 Module – – 0.18 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.020 – °C/W
Thermal Resistance Rth(j-c')QT
c Measured Point – – 0.05* °C/W
(Under Chips - IGBT Par t)
* If you use this value, Rth(f-a) should be measured just under the chips.
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
200
0
15 14
12
11
8
T
j
= 25
o
C
100
300
400
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
051015 20
200
100
0
400
300
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
6
5
0 100 200
4
3
2
1
0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
300 400
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
T
j
= 25°C
I
C
= 80A
I
C
= 400A
I
C
= 200A
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
1
10
0
10
2
10
-1
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
V
GE
= 20V
12345
100
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
101
102
103
EMITTER CURRENT, I
E
, (AMPERES)
Tj = 25°C
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CM200DU-34KA
Dual IGBTMOD™ KA-Series Module
200 Amperes / 1700 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
4
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.11°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10-1
10-2
10-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Z
th
= R
th
• (NORMALIZED VALUE)
10-1
10-2
10-3
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.18°C/W
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 400 800
16
12
8
4
01200
V
CC
= 1000V
V
CC
= 800V
I
C
= 200A
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102103
102
101
t
rr
I
rr
102
101
100
COLLECTOR CURRENT, I
C
, (AMPERES)
101102103
104
102
101
t
d(off)
t
d(on)
t
r
V
CC
= 1000V
V
GE
= ±15V
R
G
= 1.6 Ω
T
j
= 125°C
Inductive Load
V
CC
= 1000V
V
GE
= ±15V
R
G
= 1.6 Ω
T
j
= 25°C
Inductive Load
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103