CM200DU-34KA Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMODTM KA-Series Module 200 Amperes/1700 Volts A D TC Measured Point F T - (4 TYP.) H G2 E2 CL B E R CM C2E1 J E2 E1 C1 G1 25 25 XH Q S - NUTS (3 TYP) Q P N G V - THICK x W - WIDE TAB (4 PLACES) K K K M C LABEL F G2 E2 C2E1 C1 E2 Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 B 3.15 C Dimensions Inches 110.0 M 0.33 8.5 80.0 N 0.10 2.5 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Millimeters P 0.85 21.6 D 3.660.01 93.00.25 Q 0.98 25.0 E 2.440.01 62.00.25 R 0.86 21.75 F 0.83 21.0 S M6 M6 G 0.16 4.0 T 0.26 Dia. 6.5 Dia. H 0.24 6.0 V 0.02 J 0.59 15.0 W 0.110 2.79 K 0.55 14.0 X 1.08 27.35 0.5 Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-34KA is a 1700V (VCES), 200 Ampere Dual IGBTMODTM Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 200 34 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-34KA Dual IGBTMODTM KA-Series Module 200 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Symbol CM200DU-34KA Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1700 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 200 Amperes ICM 400* Amperes Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) IE 200 Amperes Peak Emitter Current** IEM 400* Amperes Maximum Collector Dissipation (Tc = 25C, Tj 150C) Pc 1100 Watts Mounting Torque, M6 Main Terminal - 40 in-lb Mounting Torque, M6 Mounting - 40 in-lb Weight - 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 3500 * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V - - 1 Units mA IGES VGE = VGES, VCE = 0V - - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 4.0 5.5 7.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25C - 3.2 4.0 Volts IC = 200A, VGE = 15V, Tj = 125C - 3.8 - Volts Gate Leakage Current Total Gate Charge QG VCC = 1000V, IC = 200A, VGE = 15V - 900 Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V, Tj = 25C - - 4.6 Volts - 2.2 - Volts Min. Typ. Max. Units - - 29.0 nf - - 4.8 nf - - 1.5 nf IE = 200A, VGE = 0V, Tj = 125C **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). - nC Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 1000V, IC = 200A, - - 600 ns Load Rise Time tr VGE1 = VGE2 = 15V, - - 200 ns Switch Turn-off Delay Time td(off) RG = 1.6, - - 700 ns Times Fall Time tf Inductive Load - - 800 ns Diode Reverse Recovery Time** trr Switching Operation - - 600 ns Diode Reverse Recovery Charge** Qrr IE = 200A - 9.6 - C VCE = 10V, VGE = 0V **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-34KA Dual IGBTMODTM KA-Series Module 200 Amperes/1700 Volts Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module - - 0.11 C/W Thermal Resistance, Junction to Case Rth(j-c)R Per FWDi 1/2 Module - - 0.18 C/W Rth(c-f) Per Module, Thermal Grease Applied - 0.020 - C/W Rth(j-c')Q Tc Measured Point - - 0.05* C/W Contact Thermal Resistance Thermal Resistance (Under Chips - IGBT Part) * If you use this value, Rth(f-a) should be measured just under the chips. 6 11 12 300 10 200 9 100 8 VCE = 10V Tj = 25C Tj = 125C 300 200 100 0 0 0 2 4 6 8 10 VGE = 15V Tj = 25C Tj = 125C 5 4 3 2 1 0 0 5 10 15 0 20 100 200 300 400 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 102 103 10 Tj = 25C 8 6 IC = 400A 4 IC = 200A 2 IC = 80A CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 400 14 Tj = 25oC 15 VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 102 101 100 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 Coes 100 Cres VGE = 0V f = 1MHz 0 0 Cies 20 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-34KA Dual IGBTMODTM KA-Series Module 200 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) td(on) 102 VCC = 1000V VGE = 15V RG = 1.6 Tj = 125C Inductive Load tr 101 101 102 103 101 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.11C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 4 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 100 10-1 100 103 102 EMITTER CURRENT, IE, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 101 VCC = 1000V VGE = 15V RG = 1.6 Tj = 25C Inductive Load COLLECTOR CURRENT, IC, (AMPERES) 10-3 101 trr Irr 102 100 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.18C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 IC = 200A 16 VCC = 800V 12 VCC = 1000V 8 4 0 0 400 800 GATE CHARGE, QG, (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) tf td(off) GATE CHARGE, VGE 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 103 REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) 104 10-3 10-3 1200