Feb.1999
¡VDSS ................................................................................ 300V
¡rDS (ON) (MAX) .............................................................. 0.68Ω
¡ID ..........................................................................................10A
300
±30
10
30
90
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
W
°C
°C
g
FS10VS-6
VDSS
VGSS
ID
IDM
PD
Tch
Tstg—
10.5MAX.
1.3
1.5MAX.
qwe
r4.5
0
+0.3
–0
3.0
+0.3
–0.5
150.8
8.6 ± 0.3
9.8 ± 0.5 1.5MAX.
(1.5)
0.5
4.5
2.6 ± 0.4
wr
q
e
q GATE
w DRAIN
e SOURCE
r DRAIN
OUTLINE DRAWING Dimensions in mm
Symbol Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
TO-220S
MITSUBISHI Nch POWER MOSFET
FS10VS-6
HIGH-SPEED SWITCHING USE
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
Typical value
Feb.1999
20
16
12
8
4
00 1020304050
P
D
=
90W T
C
= 25°C
Pulse Test
V
GS
= 20V
10V
6V
5V
7V
10
–1
7
5
3
2
10
1
7
5
3
2
23 5710
1
23 5710
2
23 5710
3
10
0
7
5
3
2
7
52
T
C
= 25°C
Single Pulse
tw=10µs
100µs
1ms
10ms
DC
100
80
60
40
20
0200150100500
10
8
6
4
2
00 4 8 12 16 20
P
D
= 90W
T
C
= 25°C
Pulse Test
V
GS
= 20V
10V
6V
5V
5.5V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
MITSUBISHI Nch POWER MOSFET
FS10VS-6
HIGH-SPEED SWITCHING USE
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
300
±30
—
—
2
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.52
2.6
6.0
570
110
20
17
25
60
30
1.5
—
—
—
±10
1
4
0.68
3.4
—
—
—
—
—
—
—
—
2.0
1.39
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 300V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
PERFORMANCE CURVES
Feb.1999
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
2
23 5710
1
23 5710
0
23
7
5
Ciss
Tch = 25°C
f = 1MHz
V
GS
= 0V
Coss
Crss
40
32
24
16
8
00 4 8 12 16 20
I
D
= 20A
T
C
= 25°C
Pulse Test
15A
10A
5A
40
32
24
16
8
00 4 8 12 16 20
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
–1
10
1
7
5
3
2
10
0
23 5710
1
10
0
7
5
3
2
23 5710
2
T
C
= 25°C
V
DS
= 10V
Pulse Test
125°C
75°C
23 5710
1
10
3
7
5
3
2
10
2
7
5
3
2
23 5710
2
10
0
10
1
Tch = 25°C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
f
t
d(off)
t
r
t
d(on)
02310
–1
5710
0
23 5710
1
23 5710
2
1.0
0.8
0.6
0.4
0.2
T
C
= 25°C
Pulse Test V
GS
= 10V
20V
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
MITSUBISHI Nch POWER MOSFET
FS10VS-6
HIGH-SPEED SWITCHING USE
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-6
HIGH-SPEED SWITCHING USE
5.0
4.0
3.0
2.0
1.0
0–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
1.4
1.2
1.0
0.8
0.6
0.4 –50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
10
–4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
10
–2
P
DM
tw
D= T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
10
0
7
5
3
2
10
–1
–50
10
1
7
5
3
2
0 50 100 150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
20
16
12
8
4
00 8 16 24 32 40
V
DS
= 50V
200V
Tch
= 25°C
I
D
= 10A
100V
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
40
32
24
16
8
00 0.8 1.6 2.4 3.2 4.0
T
C
= 125°C
25°C
75°C
V
GS
= 0V
Pulse Test
