This product complies with the RoHS Directive (EU 2002/95/EC). Silicon Junction FETs (Small Signal) 2SK3372G Silicon N-Channel Junction FET M Di ain sc te on na tin nc ue e/ d For impedance conversion in low frequency For electret capacitor microphone Package * High mutual conductance gm * Low noise voltage NV * Code SSSMini3-F2 * Pin Name di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Features Absolute Maximum Ratings Ta = 25C Symbol Rating Unit Drain-source voltage (Gate open) Parameter VDSO 20 V Gate-drain voltage (Source open) VGDO 20 V Drain-source current (Gate open) IDSO 2 mA Gate-drain current (Source open) IGDO 2 mA Gate-source current (Drain open) IGSO 2 mA Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg 100 mW -20 to +80 C -55 to +125 C 1: Drain 2: Source 3: Gate Marking Symbol: 1H Electrical Characteristics Ta = 25C 3C Parameter Symbol Drain current *1 ce /D isc on tin ue ID Drain-source current IDSS Mutual conductance gm Noise voltage NV Ma int en an Voltage gain GV1 GV2 GV3 GV. f*2 Voltage gain difference Conditions Min VDS = 2.0 V, RD = 2.2 k 1% 100 VDS = 2.0 V, RD = 2.2 k 1%, VGS = 0 107 VD = 2.0 V, VGS = 0, f = 1 kHz 660 Typ Unit 470 A 460 A S 1 600 VD = 2.0 V, RD = 2.2 k 1% CO = 5 pF, A-Curve 4 VD = 2.0 V, RD = 2.2 k 1% CO = 5 pF, eG = 10 mV, f = 1 kHz -7.5 -4.7 VD = 12 V, RD = 2.2 k 1% CO = 5 pF, eG = 10 mV, f = 1 kHz -4.0 -1.5 VD = 1.5 V, RD = 2.2 k 1% CO = 5 pF, eG = 10 mV, f = 1 kHz -8.0 -5.0 VD = 2.0 V, RD = 2.2 k 1% CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz Max 0 V dB 1.7 GV2 - GV1 0 4.0 GV1 - GV3 0 1.7 dB Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: ID is assured for IDSS. *2: GV. f is assured for AQL 0.065%. (The measurement method is used by source-grounded circuit.) Publication date: May 2008 SJF00066BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SK3372G PD Ta ID VDS 120 ID VGS 2.0 Ta = 25C 100 80 60 0.3 V 1.2 0.2 V Drain current ID (mA) Drain current ID (mA) 1.6 0.3 Ta = 75C 0.2 M Di ain sc te on na tin nc ue e/ d Power dissipation PD (mW) VDS = 2 V 0.4 VGS = 0.4 V 40 0V 40 80 0 120 Ambient temperature Ta (C) Forward transfer admittance Yfs (mS) VDS = 2 V Ta = 25C 1.2 0.8 0.4 - 0.8 - 0.4 an en int Ma 8 0 VDS = 2 V Ta = 25C 1.6 1.2 0.8 0.4 0 ce /D isc on tin Gate-source voltage VGS (V) 4 Yfs ID 2.0 1.6 0 0 0 Drain-source voltage VDS (V) Yfs VGS 2.0 0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 25C -25C - 0.1 V 0 ue 0 2 0.1 V 0.4 20 Forward transfer admittance Yfs (mS) 0.8 100 200 Drain current ID (A) SJF00066BED 300 - 0.4 - 0.2 Gate-source voltage VGS (V) 0 5 ue 0.05 0.30 -0.02 +0.05 3 1 2 0.20 -0.02 +0.05 (0.4) (0.4) 0.80 0.05 0.04 0.05 di p Pl 0.05 (0.5) lan nclu 0 to 0.80 ea e d 0.51 1.20 se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c 5fo 0.20 .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm (0.27) . /en at i o / n. ce /D isc on tin an en int Ma M Di ain sc te on na tin nc ue e/ d 1.20 0.05 0.05 This product complies with the RoHS Directive (EU 2002/95/EC). 2SK3372G SSSMini3-F2 Unit: mm SJF00066BED 0.13 -0.02 +0.05 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.