Silicon Junction FETs (Small Signal)
1
Publication date: May 2008 SJF00066BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK3372G
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
■Features
•High mutual conductance gm
•Low noise voltage NV
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Drain current *1 IDVDS = 2.0 V, RD = 2.2 kΩ ± 1% 100 470 µA
Drain-source current IDSS
V
DS
= 2.0 V, R
D
= 2.2 kΩ ± 1%, V
GS
= 0
107 460 µA
Mutual conductance gmVD = 2.0 V, VGS = 0, f = 1 kHz 660 1
600 µS
Noise voltage NV VD = 2.0 V, RD = 2.2 kΩ ± 1% 4 µV
CO = 5 pF, A-Curve
Voltage gain GV1 VD = 2.0 V, RD = 2.2 kΩ ± 1% −7.5 −4.7 dB
CO = 5 pF, eG = 10 mV, f = 1 kHz
GV2 VD = 12 V, RD = 2.2 kΩ ± 1% −4.0 −1.5
CO = 5 pF, eG = 10 mV, f = 1 kHz
GV3 VD = 1.5 V, RD = 2.2 kΩ ± 1% −8.0 −5.0
CO = 5 pF, eG = 10 mV, f = 1 kHz
∆GV. f*2VD = 2.0 V, RD = 2.2 kΩ ± 1% 0 1.7
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz to 70 Hz
Voltage gain difference GV2 − GV10 4.0 dB
GV1 − GV30 1.7
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: ID is assured for IDSS.
*2: ∆GV. f is assured for AQL 0.065%. (The measurement method is used by source-grounded circuit.)
Parameter Symbol Rating Unit
Drain-source voltage (Gate open) VDSO 20 V
Gate-drain voltage (Source open) VGDO 20 V
Drain-source current (Gate open) IDSO 2mA
Gate-drain current (Source open) IGDO 2mA
Gate-source current (Drain open) IGSO 2mA
Power dissipation PD100 mW
Operating ambient temperature Topr −20 to +80 °C
Storage temperature Tstg −55 to +125 °C
■Package
•Code
SSSMini3-F2
•Pin Name
1: Drain
2: Source
3: Gate
■Marking Symbol: 1H
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
2
2SK3372G
SJF00066BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Yfs VGS Yfs ID
PD TaID VDS ID VGS
084
0
2.0
1.6
1.2
0.4
0.8
Drain-source voltage VDS (V)
Drain current ID (mA)
Ta = 25°C
VGS = 0.4 V
0.2 V
0.1 V
0 V
0.3 V
− 0.1 V
– 0.8 0– 0.4
0
2.0
1.6
1.2
0.8
0.4
V
DS
= 2 V
T
a
= 25°C
Gate-source voltage VGS (V)
Forward transfer admittance Yfs (mS)
0 40 12080
0
120
100
80
60
40
20
Ambient temperature Ta (°C)
Power dissipation PD (mW)
– 0.4 0– 0.2
0
0.4
0.3
0.2
0.1
V
DS
= 2 V
Gate-source voltage VGS (V)
Drain current ID (mA)
25°C
−25°C
T
a
= 75°C
0 300200100
0
2.0
1.6
1.2
0.8
0.4
VDS = 2 V
Ta = 25°C
Drain current ID (µA)
Forward transfer admittance Yfs (mS)
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
2SK3372G
3
SJF00066BED
This product complies with the RoHS Directive (EU 2002/95/EC).
SSSMini3-F2 Unit: mm
0.30
+0.05
−0.02
0.20
+0.05
−0.02
0.13
+0.05
−0.02
(0.4)
(0.4)
0.80
±0.05
0.80
±0.05
0.51
±0.04
1.20
±0.05
1.20
±0.05
0.20
±0.05
3
12
(0.27)
5°
0 to 0.05 (0.5)
5°
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
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Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
