BSC014N03LS G
Opti
MOS
™3 Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel
• Logic level;
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant;
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D
V
GS
=10 V, T
C
=25 °C 100 A
V
GS
=10 V, T
C
=100 °C 100
V
GS
=4.5 V, T
C
=25 °C 100
V
GS
=4.5 V,
T
C
=100 °C 100
V
GS
=10 V, T
A
=25 °C,
R
thJA
=50 K/W
2)
34
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C 400
Avalanche current, single pulse
4)
I
AS
T
C
=25 °C 50
Avalanche energy, single pulse E
AS
I
D
=50 A, R
GS
=25 Ω290 mJ
Gate source voltage V
GS
±20 V
Value
1)
J-STD20 and JESD22
V
DS
30
V
R
DS(on),max
1.4
m
I
D
100 A
Product Summary
PG-TDSON-8
Type Package Marking
BSC014N03LS G PG-TDSON-8 014N03LS
Rev. 1.3 page 1 2009-10-22
BSC014N03LS G
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation P
tot
T
C
=25 °C 139 W
T
A
=25 °C,
R
thJA
=50 K/W
2)
2.5
Operating and storage temperature T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case R
thJC
bottom - - 0.9 K/W
top - - 20
Device on PCB R
thJA
6 cm
2
cooling area
2)
- - 50
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V
(BR)DSS
V
GS
=0 V, I
D
=1 mA 30 - - V
Gate threshold voltage V
GS(th)
V
DS
=V
GS
, I
D
=250 µA 1 - 2.2
Zero gate voltage drain current I
DSS
V
DS
=30 V, V
GS
=0 V,
T
j
=25 °C - 0.1 1 µA
V
DS
=30 V, V
GS
=0 V,
T
j
=125 °C - 10 100
Gate-source leakage current I
GSS
V
GS
=20 V, V
DS
=0 V - 10 100 nA
Drain-source on-state resistance R
DS(on)
V
GS
=4.5 V, I
D
=30 A - 1.7 2.1 mΩ
V
GS
=10 V, I
D
=30 A - 1.2 1.4
Gate resistance R
G
0.7 1.5 2.6 Ω
Transconductance g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A 65 130 - S
3)
See figure 3 for more detailed information
Value
Values
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.3 page 2 2009-10-22
BSC014N03LS G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance C
iss
- 7600 10000 pF
Output capacitance C
oss
- 2600 3500
Reverse transfer capacitance C
rss
- 160 -
Turn-on delay time t
d(on)
- 13 - ns
Rise time t
r
- 8.6 -
Turn-off delay time t
d(off)
- 51 -
Fall time t
f
- 8.6 -
Gate Charge Characteristics
5)
Gate to source charge Q
gs
- 21 - nC
Gate charge at threshold Q
g(th)
- 12 -
Gate to drain charge Q
gd
- 10 -
Switching charge Q
sw
- 19 -
Gate charge total Q
g
- 47 63
Gate plateau voltage V
plateau
- 2.8 - V
Gate charge total Q
g
V
DD
=15 V, I
D
=30 A,
V
GS
=0 to 10 V - 98 131
Gate charge total, sync. FET Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 4.5 V - 41 - nC
Output charge Q
oss
V
DD
=15 V, V
GS
=0 V - 67 -
Reverse Diode
Diode continuous forward current I
S
- - 100 A
Diode pulse current I
S,pulse
- - 400
Diode forward voltage V
SD
V
GS
=0 V, I
F
=30 A,
T
j
=25 °C - 0.78 1.1 V
Reverse recovery charge Q
rr
V
R
=15 V, I
F
=I
S
,
di
F
/dt=400 A/µs - - 30 nC
5)
See figure 16 for gate charge parameter definition
4)
See figure 13 for more detailed information
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=15 V,
f=1 MHz
V
DD
=15 V, V
GS
=10 V,
I
D
=30 A, R
G
=1.6 Ω
V
DD
=15 V, I
D
=30 A,
V
GS
=0 to 4.5 V
Rev. 1.3 page 3 2009-10-22
BSC014N03LS G
1 Power dissipation 2 Drain current
P
tot
=f(T
C
)I
D
=f(T
C
); V
GS
≥10 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
C
=25 °C; D=0 Z
thJC
=f(t
p
)
parameter: t
p
parameter: D=t
p
/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
10
3
10
2
10
1
10
0
10
-1
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
0
10
-1
10
-2
10
-3
t
p
[s]
Z
thJC
[K/W]
0
20
40
60
80
100
120
140
160
0 40 80 120 160
T
C
[°C]
P
tot
[W]
0
20
40
60
80
100
120
0 40 80 120 160
T
C
[°C]
I
D
[A]
Rev. 1.3 page 4 2009-10-22
BSC014N03LS G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
parameter: T
j
3 V
3.2 V
3.5 V
4 V
4.5 V 5 V
10 V
11.5 V
0
1
2
3
4
5
0 10 20 30 40 50
I
D
[A]
R
DS(on)
[mΩ
Ω
Ω
Ω]
25 °C
150 °C
0
80
160
240
320
400
012345
V
GS
[V]
I
D
[A]
0
50
100
150
200
250
300
0 40 80 120 160
I
D
[A]
g
fs
[S]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
50
100
150
200
250
300
350
400
0 1 2 3
V
DS
[V]
I
D
[A]
Rev. 1.3 page 5 2009-10-22
BSC014N03LS G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=30 A; V
GS
=10 V V
GS(th)
=f(T
j
); V
GS
=V
DS
; I
D
=250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(V
DS
); V
GS
=0 V; f=1 MHz I
F
=f(V
SD
)
parameter: T
j
typ
98 %
0
0.5
1
1.5
2
2.5
3
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[mΩ
Ω
Ω
Ω]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
T
j
[°C]
V
GS(th)
[V]
Ciss
Coss
Crss
10
4
10
3
10
2
10
1
10
100
1000
10000
0 5 10 15 20 25 30
V
DS
[V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
V
SD
[V]
I
F
[A]
Rev. 1.3 page 6 2009-10-22
BSC014N03LS G
13 Avalanche characteristics 14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25 ΩV
GS
=f(Q
gate
); I
D
=30 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
20
22
24
26
28
30
32
34
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
1
10
100
1 10 100 1000
t
AV
[µs]
I
AV
[A]
6 V
15 V
24 V
0
2
4
6
8
10
12
0 40 80 120
Q
gate
[nC]
V
GS
[V]
Rev. 1.3 page 7 2009-10-22
BSC014N03LS G
Package Outline PG-TDSON-8
PG-TDSON-8: Outline
Rev. 1.3 page 8 2009-10-22
BSC014N03LS G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 1.3 page 9 2009-10-22
BSC014N03LS G
Published by
Published byPublished by
Published by
Infineon Technologies AG
Infineon Technologies AGInfineon Technologies AG
Infineon Technologies AG
81726 München, Germany
81726 München, Germany81726 München, Germany
81726 München, Germany
© Infineon Technologies AG 2006.
© Infineon Technologies AG 2006.© Infineon Technologies AG 2006.
© Infineon Technologies AG 2006.
All Rights Reserved.
All Rights Reserved.All Rights Reserved.
All Rights Reserved.
Attention please!
Attention please!Attention please!
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
InformationInformation
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com
www.infineon.comwww.infineon.com
www.infineon.com ).
Warnings
WarningsWarnings
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 1.3 page 10 2009-10-22