DS23014 Rev. 8 - 3
1 of 3
www.diodes.com
SBL1630CT - SBL1660CT
© Diodes Incorporated
NOT RECOMMENDE D
FOR NEW DESIGN SBL1630CT - SBL1660CT
16A SCHOTTKY BARRIER RECTIFIER
Features
• Schottky Barrier Chip
• Guard Ring Die Construction for Transient Protect ion
• Low Power Loss, High Efficiency
• High Surge Capability
• High Current Capability and Low Forward Voltage Drop
• For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
• Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
• Case: TO-220AB
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish –Tin. Solderable per MIL-STD-202,
Method 208
• Polarity: As Marked on Body
• Marking: Type Number
• Weight: 2.24 grams (approximate)
LM
A
N
P
D
E
K
C
B
G
123
J
HH
Pi n 1 +
Pi n 3 +
Pi n 2 - Case
+
TO-220AB
Dim Min Max
A 14.48 15.75
B 10.00 10.40
C 2.54 3.43
D 5.90 6.40
E 2.80 3.93
G 12.70 14.27
H 2.40 2.70
J 0.69 0.93
K 3.54 3.78
L 4.07 4.82
M 1.15 1.39
N 0.30 0.50
P 2.04 2.79
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
SBL
1630CT SBL
1635CT SBL
1640CT SBL
1645CT SBL
1650CT SBL
1660CT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 30 35 40 45 50 60 V
RMS Reverse Voltage VR
(
RMS
)
21 24.5 28 31.5 35 42 V
Average Rectified Output Current
(Note 1) @ TC = 95°C IO 16 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load IFSM 250 A
Forward Voltage Drop @ IF = 8.0A, TC = 25°C VFM 0.55 0.70 V
Peak Reverse Current @TC = 25°C
at Rated DC Blocking Voltage @ TC = 100°C IRM 0.5
50 mA
Typical Junction Capacitance (Note 2) Cj 700 pF
Typical Thermal Resistance Junction to Case (Note 1) R
θ
JC 3.5 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
DS23014 Rev. 8 - 3
2 of 3
www.diodes.com
SBL1630CT - SBL1660CT
© Diodes Incorporated
NOT RECOMMENDE D
FOR NEW DESIGN
0
4
8
12
16
20
050100150
I, AVE
R
A
G
E
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A)
(AV)
T , CASE TEMPERA TURE (°C)
Fig. 1 Forward Current Derating Curve
C
0.1
1.0
10
40
0.1 0.3 0.5 0.7 0.9 1.1
I , INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward V oltage
F
SBL1630 - SBL1645
SBL1645 - SBL1660
50
100
150
0
200
250
300
110100
I,
P
EAK
F
O
R
WA
R
D S
U
R
G
E
C
U
R
R
EN
T
(A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
8.3ms single half-sine-wave
100
1,000
4,000
0.1 1.0 10 100
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
j
V , REVERSE VOLTAGE (V)
Fig . 4 Ty pi cal Junction Ca pacitance
R
T = 25 C
j
°
0.01
0.1
1.0
10
100
I , INS
T
AN
T
ANE
O
U
S
R
EVE
R
SE
C
U
R
R
EN
T
(A)
R
04080120
PERCENT OF PEAK REVERSE VOLT AGE (%)
Fig. 5 Typical Reverse Characteristics
T = 100 C
j
°
T = 75 C
j
°
T = 25 C
j
°
DS23014 Rev. 8 - 3
3 of 3
www.diodes.com
SBL1630CT - SBL1660CT
© Diodes Incorporated
NOT RECOMMENDE D
FOR NEW DESIGN
Ordering Information (Note 4)
Device Packaging Shipping
SBL16xxCT* TO-220AB 50/Tube
* xx = Device type, e.g. SBL1645CT
Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02007.pdf.
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