DATA SH EET
Product specification 2003 Sep 09
INTEGRATED CIRCUITS
TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
GreenChipII SMPS control IC
2003 Sep 09 2
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
FEATURES
Distinctive features
Universal mains supply operation (70 to 276 V AC)
High level of integration; giving a low external
component count.
Green features
Valley or zero voltage switching for minimum switching
losses
Efficient quasi-resonant operation at high power levels
Frequency reduction at low power standby for improved
system efficiency (3W)
Cycle skipping mode at very low loads.
Protection features
Safe restart mode for system fault conditions
Continuous mode protection by means of
demagnetization detection (zero switch-on current)
Accurateandadjustableovervoltageprotection(latched
in TEA1506; safe restart in TEA1506A)
Short winding protection
Undervoltage protection (foldback during overload)
Overtemperature protection
Low and adjustable overcurrent protection trip level
Soft (re)start.
APPLICATIONS
Besides typical application areas, i.e. TV and monitor
supplies, the device can be used in adapters and chargers
and all applications that demand an efficient and
cost-effective solution up to 150 W. Unlike the other
GreenChipII control ICs, the TEA1506 has no internal
high voltage start-up source and needs to be started by
means of an external bleeder resistor.
MDB504
TEA1506P
TEA1506AP
1
2
3
4
8
7
6
5
Fig.1 Basic application diagram.
2003 Sep 09 3
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
GENERAL DESCRIPTION
The GreenChip(1)II is the second generation of green
Switched Mode Power Supply (SMPS) control ICs. A high
level of integration leads to a cost effective power supply
with a low number of external components.
The special built-in green functions allow the efficiency to
be optimum at all power levels. This holds for
quasi-resonant operation at high power levels, as well as
fixed frequency operation with valley switching at medium
power levels. At low power (standby) levels, the system
operates at a reduced frequency and with valley detection.
Highly efficient and reliable supplies can easily be
designed using the GreenChipII control IC.
(1) GreenChip is a trademark of Koninklijke Philips
Electronics N.V.
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
TEA1506P DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1
TEA1506AP
TEA1506T SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
TEA1506AT
2003 Sep 09 4
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
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BLOCK DIAGRAM
k
, full pagewidth
SUPPLY
MANAGEMENT
internal
supply UVLO start
VCC 1
2
3
(2)
(3)
(6)
GND
CTRL
FREQUENCY
CONTROL
VOLTAGE
CONTROLLED
OSCILLATOR LOGIC
LOGIC
OVER-
VOLTAGE
PROTECTION
OVERPOWER
PROTECTION
short
winding
soft
start
S2
OVER-
TEMPERATURE
PROTECTION
SQ
R
UVLO Q
MAXIMUM
ON-TIME
PROTECTION
POWER-ON
RESET
1
UP/DOWN
COUNTER
VALLEY
TEA1506P;
TEA1506AP
(TEA1506T;
TEA1506 AT)
100
mV
clamp
DRIVER
0.88 V
0.5 V
5Isense
6DRIVER
MDB505
4DEM
8
(9)
(11)
(7)
(14) DRAIN
OCP
LEB
blank
Iss
Iprot(CTRL)
SQ
R
V
CC < 4.5 V
or UVLO
(TEA1506AT) Q
Iprot(DEM)
3.8 V
Fig.2 Block diagram.
Pin numbers in parenthesis represent the SO version.
2003 Sep 09 5
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
PINNING
SYMBOL PIN DESCRIPTION
DIP8 SO14
VCC 1 2 supply voltage
GND 2 3 ground
CTRL 3 6 control input
DEM 4 7 input from auxiliary winding for demagnetization timing; overvoltage and
overpower protection
Isense 5 9 programmable current sense input
DRIVER 6 11 gate driver output
HVS 7 12, 13 high voltage safety spacer; not connected
DRAIN 8 14 drain of external MOS switch; input for valley sensing and initial internal
supply
n.c. 1, 4, 5, 8,
10 not connected
handbook, halfpage
MDB506
TEA1506P
TEA1506AP
1
2
3
4
VCC
GND
CTRL
DEM
DRAIN
HVS
DRIVER
Isense
8
7
6
5
Fig.3 Pin configuration DIP8.
handbook, halfpage
TEA1506T
TEA1506AT
MDB507
1
2
3
4
5
6
7
n.c.
VCC
GND
n.c.
n.c.
CTRL
DEM
DRAIN
HVS
HVS
DRIVER
n.c.
Isense
n.c.
14
13
12
11
10
9
8
Fig.4 Pin configuration SO14.
2003 Sep 09 6
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
FUNCTIONAL DESCRIPTION
The TEA1506 is the controller of a compact flyback
converter, and is situated at the primary side. An auxiliary
winding of the transformer provides demagnetization
detection and powers the IC after start-up.
The TEA1506 can operate in multi modes (see Fig.5).
The next converter stroke is started only after
demagnetization of the transformer current (zero current
switching), while the drain voltage has reached the lowest
voltage to prevent switching losses (green function). The
primary resonant circuit of the primary inductance and
draincapacitorensuresthisquasi-resonant operation.The
design can be optimized in such a way that zero voltage
switching can be reached over almost the universal mains
range.
To prevent very high frequency operation at lower loads,
the quasi-resonant operation changes smoothly in fixed
frequency PWM control.
At very low power (standby) levels, the frequency is
controlled down, via the VCO, to a minimum frequency of
approximately 25 kHz.
Start-up and undervoltage lock-out
Initially the IC is in the save restart mode. As long as VCC
is below the VCC(start) level, the supply current is nearly
zero.
TheICwillactivate the converter as soonasthevoltageon
pin VCC passes the VCC(start) level.
The IC supply is taken over by the auxiliary winding as
soon as the output voltage reaches its intended level.
The moment the voltage on pin VCC drops below the
undervoltage lock-out level, the IC stops switching and
re-enters the safe restart mode.
Supply management
All (internal) reference voltages are derived from a
temperature compensated, on-chip band gap circuit.
Current mode control
Current mode control is used for its good line regulation
behaviour.
The ‘on-time’ is controlled by the internally inverted control
voltage, which is compared with the primary current
information. The primary current is sensed across an
external resistor. The driver output is latched in the logic,
preventing multiple switch-on.
The internal control voltage is inversely proportional to the
external control pin voltage, with an offset of 1.5 V. This
means that a voltage range from 1 to 1.5 V on pin CTRL
will result in an internal control voltage range from
0.5 to 0 V (a high external control voltage results in a low
duty cycle).
Oscillator
The maximum fixed frequency of the oscillator is set by an
internal current source and capacitor. The maximum
frequency is reduced once the control voltage enters the
VCO control window. Then, the maximum frequency
changeslinearly with the controlvoltage until the minimum
frequency is reached (see Figs 6 and 7).
handbook, halfpage
VCO fixed quasi resonant
P (W)
MGU508
f
(kHz)
25
175
Fig.5 Multi modes operation.
handbook, halfpage
VCTRL
1 V
(typ)
0.52 V
1.5 V
(typ)
MGU233
Vsense(max)
Fig.6 Vsense(max) voltage as function of VCTRL.
2003 Sep 09 7
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
Cycle skipping
At very low power levels, a cycle skipping mode will be
activated. A high control voltage will reduce the switching
frequency to a minimum of 25 kHz. If the voltage on the
control pin is raised even more, switch-on of the external
power MOSFET will be inhibited until the voltage on the
control pin has dropped to a lower value again (see Fig.8).
For system accuracy, it is not the absolute voltage on the
control pin that will trigger the cycle skipping mode, but a
signal derived from the internal VCO will be used.
Remark: If the no-load requirement of the system is such
that the output voltage can be regulated to its intended
level at a switching frequency of 25 kHz or above, the
cycle skipping mode will not be activated.
handbook, halfpage
Vsense(max) (V)
MGU509
f
(kHz)
25
175 175 kHz
VCO2
level VCO1
level
Fig.7 VCO frequency as function of Vsense(max).
handbook, full pagewidth
MGU510
1.5 V VCTRL
Isense
fosc
fmax
fmin
Vx (mV)
CTRL
current
comparator
cycle
skipping
X2
VI
1
0
Vx
150 mV
OSCILLATOR
DRIVER DRIVER
Vx (mV)
dV2dV1150
Fig.8 The cycle skipping circuitry.
The voltage levels dV1 and dV2 are fixed in the IC to 50 mV (typical) and 18 mV (typical) respectively.
2003 Sep 09 8
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
Demagnetization
The system will be in discontinuous conduction mode all
the time. The oscillator will not start a new primary stroke
until the secondary stroke has ended.
Demagnetization features a cycle-by-cycle output
short-circuit protection by immediately lowering the
frequency (longer off-time), thereby reducing the power
level.
Demagnetizationrecognitionis suppressed during the first
tsuppr time. This suppression may be necessary in
applications where the transformer has a large leakage
inductance, at low output voltages and at start-up.
If pin DEM is open-circuit or not connected, a fault
condition is assumed and the converter will stop operating
immediately. Operation will recommence as soon as the
fault condition is removed.
Minimum and maximum ‘on-time’
The minimum ‘on-time’ of the SMPS is determined by the
Leading Edge Blanking (LEB) time. The IC limits the
‘on-time’ to 50 µs. When the system desires an ‘on-time’
longer than 50 µs, a fault condition is assumed (e.g.
removed Ciin Fig.12), the IC will stop switching and enter
the safe restart mode.
OverVoltage Protection (OVP)
An OVP mode is implemented in the GreenChip series.
This works for the TEA1506 by sensing the auxiliary
voltage via the current flowing into pin DEM during the
secondary stroke. The auxiliary winding voltage is a
well-defined replica of the output voltage. Any voltage
spikes are averaged by an internal filter.
IftheoutputvoltageexceedstheOVPtriplevel,aninternal
counter starts counting subsequent OVP events. The
counter has been added to prevent incorrect OVP
detections which might occur during ESD or lightning
events. If the output voltage exceeds the OVP trip level a
few times and not again in a subsequent cycle, the internal
counter will count down with twice the speed compared
with counting-up. However, when typical 10 cycles of
subsequent OVP events are detected, the IC assumes a
true OVP and the OVP circuit switches the power
MOSFET off. Next, the controller waits until the UVLO
level is reached on pin VCC. When VCC drops to UVLO,
capacitor CVCC will be recharged to the Vstart level.
Regarding the TEA1506, the IC will not start switching
again. Subsequently, VCC will drop again to the UVLO
level, etc.
Operation only recommences when the VCC voltage drops
below a level of about 4.5 V.
RegardingtheTEA1506A,whentheVstart levelisreached,
switching starts again (safe restart mode) when the Vstart
level is reached. This process is repeated as long as the
OVP condition exists.
TheoutputvoltageVo(OVP) at which the OVP function trips,
can be set by the demagnetization resistor, RDEM:
where Nsis the number of secondary turns and Naux is the
number of auxiliary turns of the transformer.
Current I(OVP)(DEM) is internally trimmed.
The value of RDEM can be adjusted to the turns ratio of the
transformer, thus making an accurate OVP possible.
Vo OVP()
N
s
N
aux
----------- I(OVP)(DEM) RDEM
×Vclamp(DEM)(pos)
+{}
=
2003 Sep 09 9
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
Valley switching
A new cycle starts when the power MOSFET is switched
on (see Fig.9). After the ‘on-time’ (which is determined by
the ‘sense’ voltage and the internal control voltage), the
switchisopenedand the secondary stroke starts. After the
secondary stroke, the drain voltage shows an oscillation
with a frequency of approximately
where Lpis the primary self inductance of the transformer
and Cd is the capacitance on the drain node.
As soon as the oscillator voltage is high again and the
secondary stroke has ended, the circuit waits for the
lowest drain voltage before starting a new primary stroke.
This method is called valley detection.
Figure 9 shows the drain voltage together with the valley
signal, the signal indicating the secondary stroke and the
oscillator signal.
In an optimum design, the reflected secondary voltage on
the primary side will force the drain voltage to zero. Thus,
zero voltage switching is very possible, preventing large
capacitive switching losses
and allowing high frequency operation, which results in
small and cost effective inductors.
1
2π× LpCd
×()×
-----------------------------------------------
P1
2
--- CV
2
×f××=


handbook, full pagewidth
drain
secondary
stroke
MGU235
secondary
ringing
primary
stroke
valley
BA
secondary
stroke
oscillator
A: Start of new cycle at lowest drain voltage.
B: Start of new cycle in a classical PWM system at high drain voltage.
Fig.9 Signals for valley switching.
2003 Sep 09 10
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
OverCurrent Protection (OCP)
The cycle-by-cycle peak drain current limit circuit uses the
externalsourceresistortomeasurethecurrentaccurately.
This allows optimum size determination of the transformer
core (cost issue). The circuit is activated after the leading
edge blanking time, tleb. The OCP circuit limits the ‘sense’
voltage to an internal level.
OverPower Protection (OPP)
Duringthe primary stroke, therectified mains input voltage
is measured by sensing the current drawn from pin DEM.
This current is dependent on the mains voltage, according
to the following formula:
where:
The current information is used to adjust the peak drain
current, which is measured via pin Isense. The internal
compensation is such that an almost mains independent
maximum output power can be realized.
The OPP curve is given in Fig.10.
Short winding protection
After the leading edge blanking time, the short winding
protection circuit is activated. If the ‘sense’ voltage
exceeds the short winding protection voltage Vswp, the
converter will stop switching. Once VCC drops below the
UVLO level, capacitor CVCC will be recharged and the
supply will restart again. This cycle will be repeated until
the short-circuit is removed (safe restart mode).
The short winding protection will also protect in case of a
secondary diode short-circuit.
OverTemperature Protection (OTP)
An accurate temperature protection is provided in the
circuit. When the junction temperature exceeds the
thermal shutdown temperature, the IC will enter the safe
restart mode.
When the Vstart level is reached, switching starts again.
This process is repeated as long as the OTP condition
exists.
IDEM Vaux
RDEM
--------------- NV
mains
×
RDEM
--------------------------
≈≈
N
N
aux
Np
------------
=
handbook, halfpage
MGU236
0.52 V
(typ)
0.3 V
(typ)
IDEM
Vsense(max)
24 µA
(typ)
100 µA
(typ)
Fig.10 OPP correction curve.
2003 Sep 09 11
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
Control pin protection
If pin CTRL is open-circuit or not connected, a fault
conditionisassumedandtheconverterwillstopswitching.
Operation will recommence as soon as the fault condition
is removed.
Soft start-up
To prevent transformer rattle during hiccup, the
transformer peak current is slowly increased by the soft
start function. This can be achieved by inserting a resistor
and a capacitor between pin Isense and the sense resistor
(see Fig.11). An internal current source charges the
capacitor to V = ISS ×RSS, with a maximum of
approximately 0.5 V.
The start level and the time constant of the increasing
primary current level can be adjusted externally by
changing the values of RSS and CSS.
The charging current ISS will flow as long as the voltage on
pin Isense is below approximately 0.5 V. If the voltage on
pin Isense exceeds 0.5 V, the soft start current source will
start limiting the current ISS. At the VCC(start) level, the ISS
current source is completely switched off.
Since the soft start current ISS is supplied from pin DRAIN,
the RSS value will not affect the VCC current during start-up.
Driver
The driver circuit to the gate of the power MOSFET has a
current sourcing capability of 135 mA typical and a current
sink capability of 560 mA typical. This permits fast turn-on
and turn-off of the power MOSFET for efficient operation.
A low driver source current has been chosen to limit the
V/t at switch-on. This reduces Electro Magnetic
Interference (EMI) and also limits the current spikes
across Rsense.
Iprimary(max) Vocp ISS RSS
×()
R
sense
-----------------------------------------------
=
τRSS CSS
×=
handbook, halfpage
CSS
RSS
Isense
Rsense
ISS
Vocp
start-up
MGU237
5
0.5 V
Fig.11 Soft start.
2003 Sep 09 12
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); note 1.
Notes
1. All voltages are measured with respect to ground; positive currents flow into the IC; pin VCC may not be current
driven. The voltage ratings are valid provided other ratings are not violated; current ratings are valid provided the
maximum power rating is not violated.
2. Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 k resistor.
3. Machine Model (MM): equivalent to discharging a 200 pF capacitor through a 0.75 µH coil and a 10 resistor.
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with
‘SNW-FQ-611-D’
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Voltages
VCC supply voltage continuous 0.4 +20 V
VCTRL voltage on pin CTRL 0.4 +5 V
VDEM voltage on pin DEM current limited 0.4 V
Vsense voltage on pin Isense current limited 0.4 V
VDRAIN voltage on pin DRAIN 0.4 +650 V
Currents
ICTRL current on pin CTRL 5mA
I
DEM current on pin DEM 250 +250 µA
Isense current on pin Isense 1 +10 mA
IDRIVER current on pin DRIVER d < 10 % 0.8 +2 A
IDRAIN current on pin DRAIN 5mA
General
Ptot total power dissipation Tamb <70°C0.75 W
Tstg storage temperature 55 +150 °C
Tjoperating junction temperature 20 +145 °C
Vesd electrostatic discharge voltage
all pins except pins DRAIN and VCC HBM class 1; note 2 2000 V
pins DRAIN and VCC HBM class 1; note 2 1500 V
any pin MM; note 3 400 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to
ambient in free air 100 K/W
2003 Sep 09 13
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
CHARACTERISTICS
Tamb =25°C; VCC = 15 V; all voltages are measured with respect to ground; currents are positive when flowing into
the IC; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Start-up current source (pin DRAIN)
IDRAIN supply current drawn from
pin DRAIN VCC <Vstart 500 −µA
V
CC >V
start 50 −µA
BVDSS breakdown voltage 650 −−V
Supply voltage management (pin VCC)
VCC(start) start-up voltage on VCC 10.3 11 11.7 V
VCC(UVLO) undervoltage lock-out on VCC 8.1 8.7 9.3 V
VCC(hys) hysteresis voltage on VCC VCC(start) VCC(UVLO) 2.0 2.3 2.6 V
ICC(oper) supply current under normal
operation no load on pin DRIVER 1.1 1.3 1.5 mA
ICC(start) supply current in start-up and safe
restart mode VCC <V
start 0(1) 70 µA
ICC(protection) supply current while not switching VCC >V
UVLO 0.85 mA
Demagnetization management (pin DEM)
Vth(DEM) demagnetization comparator
threshold voltage on pin DEM 50 100 150 mV
Iprot(DEM) protection current on pin DEM VDEM =50mV 50(2) −−10 nA
Vclamp(DEM)(neg) negative clamp voltage on pin DEM IDEM =150 µA0.5 0.25 0.05 V
Vclamp(DEM)(pos) positive clamp voltage on pin DEM IDEM = 250 µA 0.5 0.7 0.9 V
tsuppr suppression of transformer ringing
at start of secondary stroke 1.1 1.5 1.9 µs
Pulse width modulator
ton(min) minimum on-time tleb ns
ton(max) maximum on-time latched 40 50 60 µs
Oscillator
fosc(l) oscillator low fixed frequency VCTRL > 1.5 V 20 25 30 kHz
fosc(h) oscillator high fixed frequency VCTRL < 1 V 145 175 205 kHz
Vvco(start) peak voltage on pin Isense; where
frequency reduction starts see Figs 7 and 8 VCO1mV
Vvco(nom) peak voltage on pin Isense; where
the frequency is equal to fosc(l)
VCO150 mV
Duty cycle control (pin CTRL)
VCTRL(min) minimum voltage on pin CTRL for
maximum duty cycle 1.0 V
VCTRL(max) maximum voltage on pin CTRL for
minimum duty cycle 1.5 V
Iprot(CTRL) protection current on pin CTRL VCTRL = 1.5 V 1(2) 0.8 0.5 µA
2003 Sep 09 14
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
Notes
1. For VCC 2V.
2. Guaranteed by design.
Valley switch (pin DRAIN)
V/tvalley valley recognition voltage change 85 −+85 V/µs
tvalley-swon delay from valley recognition to
switch-on 150(2) ns
Overcurrent and short winding protection (pin Isense)
Vsense(max) maximum source voltage OCP V/t = 0.1 V/µs 0.48 0.52 0.56 V
tPD propagating delay from detecting
Vsense(max) to switch-off V/t = 0.5 V/µs140 185 ns
Vswp short winding protection voltage 0.83 0.88 0.96 V
tleb blanking time for current and short
winding protection 300 370 440 ns
ISS soft start current Vsense <0.5 V 45 60 75 µA
Overvoltage protection (pin DEM)
IOVP(DEM) OVP level on pin DEM set by resistor RDEM;
see Section
“OverVoltage
Protection (OVP)”
54 60 66 µA
Overpower protection (pin DEM)
IOPP(DEM) OPP current on pin DEM to start
OPP correction set by resistor RDEM;
see Section
“OverPower
Protection (OPP)”
−−24 −µA
I
OPP50%(DEM) OPP current on pin DEM; where
maximum source voltage is limited
to 0.3 V
−−100 −µA
Driver (pin DRIVER)
Isource source current capability of driver VCC = 9.5 V;
VDRIVER =2V −−135 mA
Isink sink current capability of driver VCC= 9.5 V;
VDRIVER =2V 240 mA
VCC = 9.5 V;
VDRIVER = 9.5 V 560 mA
Vo(max) maximum output voltage of the
driver VCC >12 V 11.5 12 V
Overtemperature protection
Tprot(max) maximum temperature protection
level 130 140 150 °C
Tprot(hys) hysteresis for the temperature
protection level 8(2) −°C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2003 Sep 09 15
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
APPLICATION INFORMATION
A converterwith the TEA1506 consists of an inputfilter, a transformer with a third winding(auxiliary), and anoutput stage
with a feedback circuit.
Capacitor CVCC (at pin VCC) buffers the supply voltage of the IC, which is powered via the resistor RSduring start-up and
via the auxiliary winding during operation.
A sense resistor converts the primary current into a voltage at pin Isense. The value of this sense resistor defines the
maximum primary peak current.
handbook, full pagewidth
TEA1506P
TEA1506AP
1
2
3
4
VCC
Ci
Vmains
RCTRL
RDEM
Rsense
CCTRL
CVCC
VoVi
VµC
Co
GND
CTRL
DEM
DRAIN
power
MOSFET
DRIVER
Isense
8
7
6
5
HVS n.c.
NpNs
Naux
Rreg1
Rreg2
RSS
CSS
Do
MDB508
MICRO-
CONTROLLER
RS
Cmicro
Dmicro
Fig.12 Flyback configuration with secondary sensing.
2003 Sep 09 16
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
handbook, full pagewidth
Vi
Vo
Vi
VD
(power
MOSFET)
VCC
VµC
start-up
sequence normal
operation normal
operation
overvoltage
protection
(TEA1506AP/TEA1506AT)
output
short-circuit
MDB509
Vgate
Fig.13 Typical waveforms.
2003 Sep 09 17
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
PACKAGE OUTLINES
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT97-1 99-12-27
03-02-13
UNIT A
max. 12 b
1(1) (1) (1)
b2cD E e M Z
H
L
mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
min. A
max. bmax.
w
ME
e1
1.73
1.14 0.53
0.38 0.36
0.23 9.8
9.2 6.48
6.20 3.60
3.05 0.2542.54 7.62 8.25
7.80 10.0
8.3 1.154.2 0.51 3.2
inches 0.068
0.045 0.021
0.015 0.014
0.009
1.07
0.89
0.042
0.035 0.39
0.36 0.26
0.24 0.14
0.12 0.010.1 0.3 0.32
0.31 0.39
0.33 0.0450.17 0.02 0.13
b2
050G01 MO-001 SC-504-8
MH
c
(e )
1
ME
A
L
seating plane
A1
wM
b1
e
D
A2
Z
8
1
5
4
b
E
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
pin 1 index
DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1
2003 Sep 09 18
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
UNIT A
max. A1A2A3bpcD
(1) E(1) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75 0.25
0.10 1.45
1.25 0.25 0.49
0.36 0.25
0.19 8.75
8.55 4.0
3.8 1.27 6.2
5.8 0.7
0.6 0.7
0.3 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
1.0
0.4
SOT108-1
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
7
8
1
14
y
076E06 MS-012
pin 1 index
0.069 0.010
0.004 0.057
0.049 0.01 0.019
0.014 0.0100
0.0075 0.35
0.34 0.16
0.15 0.05
1.05
0.041
0.244
0.228 0.028
0.024 0.028
0.012
0.01
0.25
0.01 0.004
0.039
0.016
99-12-27
03-02-19
0 2.5 5 mm
scale
SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
2003 Sep 09 19
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
SOLDERING
Introduction
Thistextgives a verybriefinsighttoacomplex technology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-holeandsurfacemountcomponentsaremixedon
one printed-circuit board. Wave soldering can still be used
for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended. Driven by legislation and environmental
forces the worldwide use of lead-free solder pastes is
increasing.
Through-hole mount packages
SOLDERING BY DIPPING OR BY SOLDER WAVE
Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250 °C or 265 °C, depending on solder
material applied, SnPb or Pb-free respectively.
Thetotalcontact timeofsuccessivesolderwaves mustnot
exceed 5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.
Surface mount packages
REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
totheprinted-circuitboardbyscreenprinting,stencillingor
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 270 °C depending on solder paste material. The
top-surface temperature of the packages should
preferably be kept:
below 220 °C (SnPb process) or below 245 °C (Pb-free
process)
for all the BGA and SSOP-T packages
for packages with a thickness 2.5 mm
for packages with a thickness < 2.5 mm and a
volume 350 mm3 so called thick/large packages.
below 235 °C (SnPb process) or below 260 °C (Pb-free
process) for packages with a thickness < 2.5 mm and a
volume < 350 mm3 so called small/thin packages.
Moisture sensitivity precautions, as indicated on packing,
must be respected at all times.
WAVE SOLDERING
Conventional single wave soldering is not recommended
forsurfacemount devices(SMDs)orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
Forpackageswith leadsonfoursides, thefootprintmust
be placed at a 45°angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
2003 Sep 09 20
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250 °C or 265 °C, depending on solder
material applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
MANUAL SOLDERING
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C. When using a dedicated tool, all other leads can
be soldered in one operation within 2 to 5 seconds
between 270 and 320 °C.
Suitability of IC packages for wave, reflow and dipping soldering methods
Notes
1. FormoredetailedinformationontheBGApackagesrefertothe
“(LF)BGAApplicationNote
(AN01026);orderacopy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
.
3. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
4. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account
be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature
exceeding 217 °C±10 °C measured in the atmosphere of the reflow oven. The package body peak temperature
must be kept as low as possible.
5. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
6. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
7. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
8. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
9. Hot bar soldering or manual soldering is suitable for PMFP packages.
MOUNTING PACKAGE(1) SOLDERING METHOD
WAVE REFLOW(2) DIPPING
Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable(3) suitable
Through-hole-
surface mount PMFP(9) not suitable not suitable
Surface mount BGA, LBGA, LFBGA, SQFP, SSOP-T(4),
TFBGA, VFBGA not suitable suitable
DHVQFN, HBCC, HBGA, HLQFP, HSQFP,
HSOP, HTQFP, HTSSOP, HVQFN, HVSON,
SMS
not suitable(5) suitable
PLCC(6), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(6)(7) suitable
SSOP, TSSOP, VSO, VSSOP not recommended(8) suitable
2003 Sep 09 21
Philips Semiconductors Product specification
GreenChipII SMPS control IC TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat any other conditions abovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613502/01/pp22 Date of release: 2003 Sep 09 Document order number: 9397 750 11434