INTEGRATED CIRCUITS DATA SHEET TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC Product specification 2003 Sep 09 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC FEATURES APPLICATIONS Distinctive features Besides typical application areas, i.e. TV and monitor supplies, the device can be used in adapters and chargers and all applications that demand an efficient and cost-effective solution up to 150 W. Unlike the other GreenChipII control ICs, the TEA1506 has no internal high voltage start-up source and needs to be started by means of an external bleeder resistor. * Universal mains supply operation (70 to 276 V AC) * High level of integration; giving a low external component count. Green features * Valley or zero voltage switching for minimum switching losses * Efficient quasi-resonant operation at high power levels * Frequency reduction at low power standby for improved system efficiency (3 W) * Cycle skipping mode at very low loads. Protection features * Safe restart mode for system fault conditions 1 8 * Continuous mode protection by means of demagnetization detection (zero switch-on current) 2 7 3 6 4 5 TEA1506P TEA1506AP * Accurate and adjustable overvoltage protection (latched in TEA1506; safe restart in TEA1506A) * Short winding protection * Undervoltage protection (foldback during overload) * Overtemperature protection * Low and adjustable overcurrent protection trip level * Soft (re)start. MDB504 Fig.1 Basic application diagram. 2003 Sep 09 2 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC The special built-in green functions allow the efficiency to be optimum at all power levels. This holds for quasi-resonant operation at high power levels, as well as fixed frequency operation with valley switching at medium power levels. At low power (standby) levels, the system operates at a reduced frequency and with valley detection. GENERAL DESCRIPTION GreenChip(1)II is the second generation of green The Switched Mode Power Supply (SMPS) control ICs. A high level of integration leads to a cost effective power supply with a low number of external components. Highly efficient and reliable supplies can easily be designed using the GreenChipII control IC. (1) GreenChip is a trademark of Koninklijke Philips Electronics N.V. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TEA1506P DESCRIPTION VERSION DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1 SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 TEA1506AP TEA1506T TEA1506AT 2003 Sep 09 3 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... DRAIN Iprot(DEM) internal supply GND VALLEY UVLO start clamp 2 (3) 4 VOLTAGE CONTROLLED OSCILLATOR LOGIC (7) DEM 100 mV UP/DOWN COUNTER FREQUENCY CONTROL LOGIC Iprot(CTRL) 4 CTRL 3 OVERVOLTAGE PROTECTION 6 DRIVER Philips Semiconductors (2) 8 (14) GreenChipII SMPS control IC SUPPLY MANAGEMENT BLOCK DIAGRAM 1 k, full pagewidth 2003 Sep 09 VCC DRIVER (11) -1 (6) Iss POWER-ON RESET LEB S Q R Q 3.8 V soft start S2 blank UVLO 0.5 V 5 OCP TEA1506P; TEA1506AP (TEA1506T; TEA1506 AT) VCC < 4.5 V or UVLO (TEA1506AT) Q R Q short winding MAXIMUM ON-TIME PROTECTION 0.88 V MDB505 Pin numbers in parenthesis represent the SO version. Fig.2 Block diagram. Product specification OVERPOWER PROTECTION Isense TEA1506P; TEA1506AP; TEA1506T; TEA1506AT OVERTEMPERATURE PROTECTION S (9) Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC PINNING PIN SYMBOL DESCRIPTION DIP8 SO14 VCC 1 2 supply voltage GND 2 3 ground CTRL 3 6 control input DEM 4 7 input from auxiliary winding for demagnetization timing; overvoltage and overpower protection Isense 5 9 programmable current sense input DRIVER 6 11 gate driver output HVS 7 12, 13 DRAIN 8 14 n.c. - 1, 4, 5, 8, 10 high voltage safety spacer; not connected drain of external MOS switch; input for valley sensing and initial internal supply not connected handbook, halfpage n.c. 1 handbook, halfpage VCC 1 8 DRAIN GND 2 7 HVS TEA1506P VCC 2 13 HVS GND 3 12 HVS n.c. 4 CTRL 3 TEA1506AP 6 DRIVER n.c. 5 DEM 4 5 Isense 14 DRAIN TEA1506T 11 DRIVER TEA1506AT 10 n.c. CTRL 6 9 Isense DEM 7 8 n.c. MDB506 MDB507 Fig.3 Pin configuration DIP8. 2003 Sep 09 Fig.4 Pin configuration SO14. 5 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC FUNCTIONAL DESCRIPTION The TEA1506 is the controller of a compact flyback converter, and is situated at the primary side. An auxiliary winding of the transformer provides demagnetization detection and powers the IC after start-up. 0.52 V The TEA1506 can operate in multi modes (see Fig.5). f MGU233 V sense(max) handbook, halfpage MGU508 handbook, halfpage (kHz) VCO fixed 1V (typ) quasi resonant 175 1.5 V (typ) VCTRL Fig.6 Vsense(max) voltage as function of VCTRL. 25 The moment the voltage on pin VCC drops below the undervoltage lock-out level, the IC stops switching and re-enters the safe restart mode. P (W) Fig.5 Multi modes operation. Supply management All (internal) reference voltages are derived from a temperature compensated, on-chip band gap circuit. The next converter stroke is started only after demagnetization of the transformer current (zero current switching), while the drain voltage has reached the lowest voltage to prevent switching losses (green function). The primary resonant circuit of the primary inductance and drain capacitor ensures this quasi-resonant operation. The design can be optimized in such a way that zero voltage switching can be reached over almost the universal mains range. Current mode control Current mode control is used for its good line regulation behaviour. The `on-time' is controlled by the internally inverted control voltage, which is compared with the primary current information. The primary current is sensed across an external resistor. The driver output is latched in the logic, preventing multiple switch-on. To prevent very high frequency operation at lower loads, the quasi-resonant operation changes smoothly in fixed frequency PWM control. The internal control voltage is inversely proportional to the external control pin voltage, with an offset of 1.5 V. This means that a voltage range from 1 to 1.5 V on pin CTRL will result in an internal control voltage range from 0.5 to 0 V (a high external control voltage results in a low duty cycle). At very low power (standby) levels, the frequency is controlled down, via the VCO, to a minimum frequency of approximately 25 kHz. Start-up and undervoltage lock-out Initially the IC is in the save restart mode. As long as VCC is below the VCC(start) level, the supply current is nearly zero. Oscillator The maximum fixed frequency of the oscillator is set by an internal current source and capacitor. The maximum frequency is reduced once the control voltage enters the VCO control window. Then, the maximum frequency changes linearly with the control voltage until the minimum frequency is reached (see Figs 6 and 7). The IC will activate the converter as soon as the voltage on pin VCC passes the VCC(start) level. The IC supply is taken over by the auxiliary winding as soon as the output voltage reaches its intended level. 2003 Sep 09 6 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC Cycle skipping At very low power levels, a cycle skipping mode will be activated. A high control voltage will reduce the switching frequency to a minimum of 25 kHz. If the voltage on the control pin is raised even more, switch-on of the external power MOSFET will be inhibited until the voltage on the control pin has dropped to a lower value again (see Fig.8). MGU509 f (kHz) handbook, halfpage 175 kHz 175 25 VCO2 level VCO1 level For system accuracy, it is not the absolute voltage on the control pin that will trigger the cycle skipping mode, but a signal derived from the internal VCO will be used. Vsense(max) (V) Remark: If the no-load requirement of the system is such that the output voltage can be regulated to its intended level at a switching frequency of 25 kHz or above, the cycle skipping mode will not be activated. Fig.7 VCO frequency as function of Vsense(max). fosc handbook, full pagewidth 1.5 V - VCTRL current comparator CTRL fmax DRIVER DRIVER fmin Isense X2 dV2 Vx cycle skipping V I dV1 150 Vx (mV) OSCILLATOR 150 mV 1 0 Vx (mV) MGU510 The voltage levels dV1 and dV2 are fixed in the IC to 50 mV (typical) and 18 mV (typical) respectively. Fig.8 The cycle skipping circuitry. 2003 Sep 09 7 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC Regarding the TEA1506, the IC will not start switching again. Subsequently, VCC will drop again to the UVLO level, etc. Operation only recommences when the VCC voltage drops below a level of about 4.5 V. Demagnetization The system will be in discontinuous conduction mode all the time. The oscillator will not start a new primary stroke until the secondary stroke has ended. Demagnetization features a cycle-by-cycle output short-circuit protection by immediately lowering the frequency (longer off-time), thereby reducing the power level. Regarding the TEA1506A, when the Vstart level is reached, switching starts again (safe restart mode) when the Vstart level is reached. This process is repeated as long as the OVP condition exists. Demagnetization recognition is suppressed during the first tsuppr time. This suppression may be necessary in applications where the transformer has a large leakage inductance, at low output voltages and at start-up. The output voltage Vo(OVP) at which the OVP function trips, can be set by the demagnetization resistor, RDEM: V o ( OVP ) = If pin DEM is open-circuit or not connected, a fault condition is assumed and the converter will stop operating immediately. Operation will recommence as soon as the fault condition is removed. Ns ----------- { I (OVP)(DEM) x R DEM + V clamp(DEM)(pos) } N aux where Ns is the number of secondary turns and Naux is the number of auxiliary turns of the transformer. Minimum and maximum `on-time' Current I(OVP)(DEM) is internally trimmed. The minimum `on-time' of the SMPS is determined by the Leading Edge Blanking (LEB) time. The IC limits the `on-time' to 50 s. When the system desires an `on-time' longer than 50 s, a fault condition is assumed (e.g. removed Ci in Fig.12), the IC will stop switching and enter the safe restart mode. The value of RDEM can be adjusted to the turns ratio of the transformer, thus making an accurate OVP possible. OverVoltage Protection (OVP) An OVP mode is implemented in the GreenChip series. This works for the TEA1506 by sensing the auxiliary voltage via the current flowing into pin DEM during the secondary stroke. The auxiliary winding voltage is a well-defined replica of the output voltage. Any voltage spikes are averaged by an internal filter. If the output voltage exceeds the OVP trip level, an internal counter starts counting subsequent OVP events. The counter has been added to prevent incorrect OVP detections which might occur during ESD or lightning events. If the output voltage exceeds the OVP trip level a few times and not again in a subsequent cycle, the internal counter will count down with twice the speed compared with counting-up. However, when typical 10 cycles of subsequent OVP events are detected, the IC assumes a true OVP and the OVP circuit switches the power MOSFET off. Next, the controller waits until the UVLO level is reached on pin VCC. When VCC drops to UVLO, capacitor CVCC will be recharged to the Vstart level. 2003 Sep 09 8 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC Valley switching lowest drain voltage before starting a new primary stroke. This method is called valley detection. Figure 9 shows the drain voltage together with the valley signal, the signal indicating the secondary stroke and the oscillator signal. A new cycle starts when the power MOSFET is switched on (see Fig.9). After the `on-time' (which is determined by the `sense' voltage and the internal control voltage), the switch is opened and the secondary stroke starts. After the secondary stroke, the drain voltage shows an oscillation 1 with a frequency of approximately ----------------------------------------------2 x x ( Lp x Cd ) In an optimum design, the reflected secondary voltage on the primary side will force the drain voltage to zero. Thus, zero voltage switching is very possible, preventing large 1 2 capacitive switching losses P = --- x C x V x f 2 where Lp is the primary self inductance of the transformer and Cd is the capacitance on the drain node. and allowing high frequency operation, which results in small and cost effective inductors. As soon as the oscillator voltage is high again and the secondary stroke has ended, the circuit waits for the primary stroke handbook, full pagewidth secondary ringing secondary stroke drain valley secondary stroke B A oscillator MGU235 A: Start of new cycle at lowest drain voltage. B: Start of new cycle in a classical PWM system at high drain voltage. Fig.9 Signals for valley switching. 2003 Sep 09 9 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC Short winding protection After the leading edge blanking time, the short winding protection circuit is activated. If the `sense' voltage exceeds the short winding protection voltage Vswp, the converter will stop switching. Once VCC drops below the UVLO level, capacitor CVCC will be recharged and the supply will restart again. This cycle will be repeated until the short-circuit is removed (safe restart mode). MGU236 handbook, halfpage Vsense(max) 0.52 V (typ) 0.3 V (typ) The short winding protection will also protect in case of a secondary diode short-circuit. -100 A (typ) IDEM -24 A (typ) OverTemperature Protection (OTP) An accurate temperature protection is provided in the circuit. When the junction temperature exceeds the thermal shutdown temperature, the IC will enter the safe restart mode. Fig.10 OPP correction curve. OverCurrent Protection (OCP) When the Vstart level is reached, switching starts again. This process is repeated as long as the OTP condition exists. The cycle-by-cycle peak drain current limit circuit uses the external source resistor to measure the current accurately. This allows optimum size determination of the transformer core (cost issue). The circuit is activated after the leading edge blanking time, tleb. The OCP circuit limits the `sense' voltage to an internal level. OverPower Protection (OPP) During the primary stroke, the rectified mains input voltage is measured by sensing the current drawn from pin DEM. This current is dependent on the mains voltage, according V aux N x V mains to the following formula: I DEM --------------- -------------------------R DEM R DEM N aux where: N = ----------Np The current information is used to adjust the peak drain current, which is measured via pin Isense. The internal compensation is such that an almost mains independent maximum output power can be realized. The OPP curve is given in Fig.10. 2003 Sep 09 10 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC Control pin protection If pin CTRL is open-circuit or not connected, a fault condition is assumed and the converter will stop switching. Operation will recommence as soon as the fault condition is removed. handbook, halfpage ISS Soft start-up 0.5 V To prevent transformer rattle during hiccup, the transformer peak current is slowly increased by the soft start function. This can be achieved by inserting a resistor and a capacitor between pin Isense and the sense resistor (see Fig.11). An internal current source charges the capacitor to V = ISS x RSS, with a maximum of approximately 0.5 V. start-up RSS 5 Isense Vocp CSS Rsense MGU237 The start level and the time constant of the increasing primary current level can be adjusted externally by changing the values of RSS and CSS. Fig.11 Soft start. V ocp - ( I SS x R SS ) I primary(max) = ---------------------------------------------R sense Driver = R SS x C SS The driver circuit to the gate of the power MOSFET has a current sourcing capability of 135 mA typical and a current sink capability of 560 mA typical. This permits fast turn-on and turn-off of the power MOSFET for efficient operation. The charging current ISS will flow as long as the voltage on pin Isense is below approximately 0.5 V. If the voltage on pin Isense exceeds 0.5 V, the soft start current source will start limiting the current ISS. At the VCC(start) level, the ISS current source is completely switched off. A low driver source current has been chosen to limit the V/t at switch-on. This reduces Electro Magnetic Interference (EMI) and also limits the current spikes across Rsense. Since the soft start current ISS is supplied from pin DRAIN, the RSS value will not affect the VCC current during start-up. 2003 Sep 09 11 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); note 1. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Voltages continuous -0.4 VCC supply voltage +20 V VCTRL voltage on pin CTRL -0.4 +5 V VDEM voltage on pin DEM current limited -0.4 - V Vsense voltage on pin Isense current limited -0.4 - V VDRAIN voltage on pin DRAIN -0.4 +650 V ICTRL current on pin CTRL - 5 mA IDEM current on pin DEM -250 +250 A Isense current on pin Isense -1 +10 mA IDRIVER current on pin DRIVER -0.8 +2 A IDRAIN current on pin DRAIN - 5 mA Currents d < 10 % General Ptot total power dissipation - 0.75 W Tstg storage temperature Tamb < 70 C -55 +150 C Tj operating junction temperature -20 +145 C Vesd electrostatic discharge voltage all pins except pins DRAIN and VCC HBM class 1; note 2 - 2000 V pins DRAIN and VCC HBM class 1; note 2 - 1500 V any pin MM; note 3 - 400 V Notes 1. All voltages are measured with respect to ground; positive currents flow into the IC; pin VCC may not be current driven. The voltage ratings are valid provided other ratings are not violated; current ratings are valid provided the maximum power rating is not violated. 2. Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 k resistor. 3. Machine Model (MM): equivalent to discharging a 200 pF capacitor through a 0.75 H coil and a 10 resistor. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient QUALITY SPECIFICATION In accordance with `SNW-FQ-611-D'. 2003 Sep 09 12 CONDITIONS VALUE UNIT in free air 100 K/W Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC CHARACTERISTICS Tamb = 25 C; VCC = 15 V; all voltages are measured with respect to ground; currents are positive when flowing into the IC; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Start-up current source (pin DRAIN) IDRAIN supply current drawn from pin DRAIN BVDSS breakdown voltage VCC < Vstart VCC > Vstart - 500 - A - 50 - A 650 - - V 10.3 11 11.7 V 8.1 Supply voltage management (pin VCC) VCC(start) start-up voltage on VCC VCC(UVLO) undervoltage lock-out on VCC 8.7 9.3 V VCC(hys) hysteresis voltage on VCC VCC(start) - VCC(UVLO) 2.0 2.3 2.6 V ICC(oper) supply current under normal operation no load on pin DRIVER 1.1 1.3 1.5 mA ICC(start) supply current in start-up and safe restart mode VCC < Vstart 0(1) - 70 A ICC(protection) supply current while not switching VCC > VUVLO - 0.85 - mA 50 100 150 mV -50(2) - -10 nA -0.5 -0.25 -0.05 V 0.5 0.7 0.9 V 1.1 1.5 1.9 s - tleb - ns Demagnetization management (pin DEM) Vth(DEM) demagnetization comparator threshold voltage on pin DEM Iprot(DEM) protection current on pin DEM VDEM = 50 mV Vclamp(DEM)(neg) negative clamp voltage on pin DEM IDEM = -150 A Vclamp(DEM)(pos) positive clamp voltage on pin DEM tsuppr IDEM = 250 A suppression of transformer ringing at start of secondary stroke Pulse width modulator ton(min) minimum on-time ton(max) maximum on-time latched 40 50 60 s fosc(l) oscillator low fixed frequency VCTRL > 1.5 V 20 25 30 kHz fosc(h) oscillator high fixed frequency VCTRL < 1 V 145 175 205 kHz Vvco(start) peak voltage on pin Isense; where frequency reduction starts see Figs 7 and 8 - VCO1 - mV Vvco(nom) peak voltage on pin Isense; where the frequency is equal to fosc(l) - VCO1 - 50 - mV Oscillator Duty cycle control (pin CTRL) VCTRL(min) minimum voltage on pin CTRL for maximum duty cycle - 1.0 - V VCTRL(max) maximum voltage on pin CTRL for minimum duty cycle - 1.5 - V Iprot(CTRL) protection current on pin CTRL -1(2) -0.8 -0.5 A 2003 Sep 09 VCTRL = 1.5 V 13 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Valley switch (pin DRAIN) V/tvalley valley recognition voltage change -85 - +85 V/s tvalley-swon delay from valley recognition to switch-on - 150(2) - ns Overcurrent and short winding protection (pin Isense) Vsense(max) maximum source voltage OCP V/t = 0.1 V/s 0.48 0.52 0.56 V tPD propagating delay from detecting Vsense(max) to switch-off V/t = 0.5 V/s - 140 185 ns Vswp short winding protection voltage 0.83 0.88 0.96 V tleb blanking time for current and short winding protection 300 370 440 ns ISS soft start current Vsense < 0.5 V 45 60 75 A set by resistor RDEM; see Section "OverVoltage Protection (OVP)" 54 60 66 A set by resistor RDEM; see Section "OverPower Protection (OPP)" - -24 - A - -100 - A Overvoltage protection (pin DEM) IOVP(DEM) OVP level on pin DEM Overpower protection (pin DEM) IOPP(DEM) OPP current on pin DEM to start OPP correction IOPP50%(DEM) OPP current on pin DEM; where maximum source voltage is limited to 0.3 V Driver (pin DRIVER) Isource source current capability of driver VCC = 9.5 V; VDRIVER = 2 V - -135 - mA Isink sink current capability of driver VCC= 9.5 V; VDRIVER = 2 V - 240 - mA VCC = 9.5 V; VDRIVER = 9.5 V - 560 - mA VCC > 12 V - 11.5 12 V Vo(max) maximum output voltage of the driver Overtemperature protection Tprot(max) maximum temperature protection level 130 140 150 C Tprot(hys) hysteresis for the temperature protection level - 8(2) - C Notes 1. For VCC 2 V. 2. Guaranteed by design. 2003 Sep 09 14 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC APPLICATION INFORMATION A converter with the TEA1506 consists of an input filter, a transformer with a third winding (auxiliary), and an output stage with a feedback circuit. Capacitor CVCC (at pin VCC) buffers the supply voltage of the IC, which is powered via the resistor RS during start-up and via the auxiliary winding during operation. A sense resistor converts the primary current into a voltage at pin Isense. The value of this sense resistor defines the maximum primary peak current. handbook, full pagewidth Vmains Do Vi Vo Ci RS Np VCC CVCC CCTRL RCTRL GND CTRL DEM 3 Co 8 DRAIN 1 2 Ns TEA1506P TEA1506AP 7 6 5 4 HVS n.c. power MOSFET DRIVER Isense RSS CSS Rsense Dmicro VC RDEM Naux Cmicro MICROCONTROLLER Rreg1 Rreg2 MDB508 Fig.12 Flyback configuration with secondary sensing. 2003 Sep 09 15 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC handbook, full pagewidth Vi VD (power MOSFET) Vi Vo VCC Vgate VC start-up sequence normal operation overvoltage protection (TEA1506AP/TEA1506AT) Fig.13 Typical waveforms. 2003 Sep 09 16 output short-circuit normal operation MDB509 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC PACKAGE OUTLINES DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1 ME seating plane D A2 A A1 L c Z w M b1 e (e 1) b MH b2 5 8 pin 1 index E 1 4 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 b2 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.2 0.51 3.2 1.73 1.14 0.53 0.38 1.07 0.89 0.36 0.23 9.8 9.2 6.48 6.20 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 1.15 inches 0.17 0.02 0.13 0.068 0.045 0.021 0.015 0.042 0.035 0.014 0.009 0.39 0.36 0.26 0.24 0.1 0.3 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.045 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT97-1 050G01 MO-001 SC-504-8 2003 Sep 09 17 EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-13 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE v M A Z 8 14 Q A2 A (A 3) A1 pin 1 index Lp 1 L 7 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.010 0.057 0.004 0.049 0.01 0.019 0.0100 0.35 0.014 0.0075 0.34 0.16 0.15 0.05 0.028 0.024 0.01 0.01 0.004 0.028 0.012 inches 0.069 0.244 0.039 0.041 0.228 0.016 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT108-1 076E06 MS-012 2003 Sep 09 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 18 o 8 0o Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC SOLDERING cooling) vary between 100 and 200 seconds depending on heating method. Introduction Typical reflow peak temperatures range from 215 to 270 C depending on solder paste material. The top-surface temperature of the packages should preferably be kept: This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). * below 220 C (SnPb process) or below 245 C (Pb-free process) There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. - for all the BGA and SSOP-T packages - for packages with a thickness 2.5 mm - for packages with a thickness < 2.5 mm and a volume 350 mm3 so called thick/large packages. * below 235 C (SnPb process) or below 260 C (Pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages. Moisture sensitivity precautions, as indicated on packing, must be respected at all times. Through-hole mount packages SOLDERING BY DIPPING OR BY SOLDER WAVE Typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 C or 265 C, depending on solder material applied, SnPb or Pb-free respectively. WAVE SOLDERING Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. The total contact time of successive solder waves must not exceed 5 seconds. To overcome these problems the double-wave soldering method was specifically developed. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. MANUAL SOLDERING * For packages with leads on two sides and a pitch (e): Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Surface mount packages The footprint must incorporate solder thieves at the downstream end. REFLOW SOLDERING Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe 2003 Sep 09 19 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC dispensing. The package can be soldered after the adhesive is cured. MANUAL SOLDERING Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C. Typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 C or 265 C, depending on solder material applied, SnPb or Pb-free respectively. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Suitability of IC packages for wave, reflow and dipping soldering methods SOLDERING METHOD PACKAGE(1) MOUNTING WAVE REFLOW(2) DIPPING suitable(3) - suitable Through-holesurface mount PMFP(9) not suitable not suitable - Surface mount BGA, LBGA, LFBGA, SQFP, SSOP-T(4), TFBGA, VFBGA not suitable suitable - DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS not suitable(5) suitable - PLCC(6), SO, SOJ suitable suitable - suitable - suitable - Through-hole mount DBS, DIP, HDIP, SDIP, SIL recommended(6)(7) LQFP, QFP, TQFP not SSOP, TSSOP, VSO, VSSOP not recommended(8) Notes 1. For more detailed information on the BGA packages refer to the "(LF)BGA Application Note" (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 3. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 4. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 C 10 C measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible. 5. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 6. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 7. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 8. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 9. Hot bar soldering or manual soldering is suitable for PMFP packages. 2003 Sep 09 20 Philips Semiconductors Product specification TEA1506P; TEA1506AP; TEA1506T; TEA1506AT GreenChipII SMPS control IC DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 09 21 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 (c) Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613502/01/pp22 Date of release: 2003 Sep 09 Document order number: 9397 750 11434