SKiM®4
IGBT Modules
SKiM 150GD126D
Preliminary Data
Features
     

    

 ! 
 " #$% 
  & 
'!   
& 
(  &  
) '   
&
 &! 
Typical Applications
( &  !
  )  
&  
GD
Absolute Maximum Ratings * #+ ,- !  
Symbol Conditions Values Units
IGBT
./( 0#11 .
* #+ 31 , 041 01+
56 * 0 & %11
./( 7 #1 .
8 9 41 ::: 0+1 0#+ ,
 &;:   &! 0#+ ,
. - 0 &: #+11 .
Inverse diode
<* #+ 31 , 0%1 011
<56 * 0 & %11
<(6 * 01 &= := 8* 0+1 , 0011
Characteristics * #+ ,- !  
Symbol Conditions min. typ. max. Units
IGBT
./ ./ * ./= * > & + +-? >-+ .
/( ./ * 1= ./ * ./(=
8* #+ ,
1-# 1-> &
./$ 8* #+ 0#+ , 0 1-@ 0-# .
/ 8* #+ 0#+ , 4->3 3-%% >->3 &A
./ & * 0+1 = ./ * 0+ .-
8* #+ 0#+ ,   )
0-3 # #-0+ .
 ./ * 1= ./ * #+ .= * 0 6B 00-+ <
 ./ * 1= ./ * #+ .= * 0 6B 1-? <
 ./ * 1= ./ * #+ .= * 0 6B 1-? <
/ 0+ 
5CD//C - &9 * #+ 0#+ , 0-%+ 0-3+ &A
 . * >11 . %#1 
& * 0+1 3+ 
 5 * 5 * @ A ?11 
8* 0#+ , 0%1 
/ / ./ 7 0+ . 00 0@ &E
/ /  (F >4= 8* 0#+ ,
. * >11 .= * 0+1
&E
Inverse diode
.<* ./ <& * 011 = ./ * 1 .=
8* #+ 0#+ ,
# 0-? #-++ #-% .
.$ 8* #+ 0#+ , 0-0 0-4+ 0-#+ .
8* #+ 0#+ , @ 0% 00 &G
556 <* 011 = 8* 0#+ ,
H ./ * 1 . I * IJ J
/ 5 * 5 * @ A 0# &E
Thermal characteristics
589   1-%> FIK
589  <K 1-+> FIK
Temperature Sensor
5( * #+ 011 , 0 0->3 LA
 * #+ 011 , % # M
Mechanical data
60 L 6+ # % N&
6# & 6> 4 + N&
%01
SKiM 150GD126D
1 25-10-2005 RAA © by SEMIKRON
Fig. 1 Output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG)
Fig. 5 Transfer characteristic Fig. 6 Gate charge characteristic
SKiM 150GD126D
2 25-10-2005 RAA © by SEMIKRON
Fig. 7 Switching times vs. ICFig. 8 Switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-s) = f (tp);D=tp/tc= tp* f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-s) = f (tp);D=tp/tc= tp* f
Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE'
SKiM 150GD126D
3 25-10-2005 RAA © by SEMIKRON
Dimensions in mm
 (F6 4
 (F6O4
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKiM 150GD126D
4 25-10-2005 RAA © by SEMIKRON