© 2016 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 175C60 V
VDGR TJ= 25C to 175C, RGS = 1M60 V
VGSM Transient 20 V
ID25 TC= 25C 220 A
ILRMS Lead Current Limit, RMS 160 A
IDM TC= 25C, Pulse Width Limited by TJM 500 A
IATC= 25C 110 A
EAS TC= 25C 900 mJ
PDTC= 25C 440 W
TJ-55 ... +175 C
TJM 175 C
Tstg -55 ... +175 C
TLMaximum Lead Temperature for Soldering 300 °C
SOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220 & TO-247) 1.13 / 10 m/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
TO-247 6.0 g
TrenchT3TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrnsic Rectifier
IXFA220N06T3
IXFP220N06T3
IXFH220N06T3
VDSS = 60V
ID25 = 220A
RDS(on)
4m
DS100730(5/16)
Features
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Rectifier
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters & Off-Line UPS
Primary-Side Switch
High Current Switching Applications
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250A 60 V
VGS(th) VDS = VGS, ID = 250A 2.0 4.0 V
IGSS VGS = 20V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS = 0V 10 A
TJ = 150C 1 mA
RDS(on) VGS = 10V, ID = 100A, Notes 1, 2 4 m
G
S
D (Tab)
GDS
TO-220AB (IXFP)
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
SD (Tab)
D
TO-263 AA (IXFA)
Advance Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA220N06T3 IXFP220N06T3
IXFH220N06T3
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 87 145 S
Ciss 8500 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 970 pF
Crss 50 pF
RGi Gate Input Resistance 1.7
td(on) 24 ns
tr 20 ns
td(off) 46 ns
tf 17 ns
Qg(on) 136 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 44 nC
Qgd 30 nC
RthJC 0.34C/W
RthCS TO-220 0.50 C/W
TO-247 0.21 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 220 A
ISM Repetitive, Pulse Width Limited by TJM 880 A
VSD IF = 100A, VGS = 0V, Note 1 1.4 V
trr 38 ns
IRM 1.9 A
QRM 37 nC
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm
or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5 (External)
IF = 110A, VGS = 0V
-di/dt = 100A/s
VR = 40V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2016 IXYS CORPORATION, All Rights Reserved
IXFA220N06T3 IXFP220N06T3
IXFH220N06T3
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
40
80
120
160
200
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V
7V
5V
4V
6V
Fig. 4. Normalized R
DS(on)
to I
D
= 110A Va lue
vs.
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 110A
I
D
= 220A
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
012345678910
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
5V
6V
7V
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V
6V
5V
7V
Fig. 5. Normaliz ed R
DS(on)
to I
D
= 110A
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 50 100 150 200 250 300 350
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA220N06T3 IXFP220N06T3
IXFH220N06T3
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
V
DS
= 10V
25ºC
- 40ºC
Fig. 8. Transconductance
0
50
100
150
200
250
300
0 40 80 120 160 200 240
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
V
DS
= 10V
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 30V
I
D
= 110A
I
G
= 10mA
Fig. 11. Capacitanc e
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100
V
DS
- Volts
I
D
- Amperes
100µs
1ms
10ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
DC
External Lead
Current Limit
© 2016 IXYS CORPORATION, All Rights Reserved
IXFA220N06T3 IXFP220N06T3
IXFH220N06T3
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Curre nt
10
12
14
16
18
20
22
24
26
28
110 120 130 140 150 160 170 180 190 200 210 220
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 150ºC
R
G
= 5 , V
GS
= 10V
V
DS
= 30V
Fig. 15 . Resistive Turn-on Switching Times
v s. Gate Resistance
0
50
100
150
200
250
300
350
5 101520253035404550
R
G
- Ohms
t
r
- Nanoseconds
0
30
60
90
120
150
180
210
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 150ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 220A, 110A
Fig. 16. Resistive Turn-off Switching Tim es
vs. Junction Tempe rature
0
5
10
15
20
25
30
35
40
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f
- Nanoseconds
30
40
50
60
70
80
90
100
110
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 5, V
GS
= 10V
V
DS
= 30V I
D
= 220A
I
D
= 110A
I
D
= 220A
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
10
14
18
22
26
30
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5 , V
GS
= 10V
V
DS
= 30V
I
D
= 220A
I
D
= 110A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Cu rren t
10
12
14
16
18
20
22
24
26
110 120 130 140 150 160 170 180 190 200 210 220
ID - Amperes
t
f
- Nanoseconds
20
30
40
50
60
70
80
90
100
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 5, V
GS
= 10V
V
DS
= 30V
T
J
= 25ºC
T
J
= 150ºC
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
100
200
300
400
500
600
5 101520253035404550
RG - Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 150ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 110A
I
D
= 220A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA220N06T3 IXFP220N06T3
IXFH220N06T3
IXYS REF: F_220N06T3(U5-M05) 5-27-16
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-263 Outline
1 = Gate
2 = Drain
3 = Source
4 = Drain
TO-247 Outline
R
L1
A2
Q
E
A
D
c
B
A
b
C
L
D
S D2
E1
A2 A2 A2
e
0P1
ixys option
A1
b4
b2
D1
0P O 0K M D B M
+
O J M C A M
+
12 3
4
+
+
PINS: 1 - Gate
2, 4 - Drain
3 - Source
Fig. 19. Maximum Transie nt Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.