Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
64 83
89 120
RθJL 53 70
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
±12Gate-Source Voltage
Drain-Source Voltage 20
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
6.3
30
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Junction and Storage Temperature Range
A
PD
°C
1.5
1.08
-55 to 150
TA=70°C
ID
8
AO8804
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
March 2003
Features
VDS (V) = 20V
ID = 8A
RDS(ON) < 13mΩ (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 4.5V)
RDS(ON) < 19mΩ (VGS = 2.5V)
RDS(ON) < 27mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
General Description
The AO8804 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AO8804
Symbol Min Typ Max Units
BVDSS 20 V
10
TJ=55°C 25
IGSS 10
µ
A
BVGSO ±12 V
VGS(th) 0.5 0.75 1 V
ID(ON) 30 A
10 13
TJ=125°C 13.3 16
11.5 14 m
Ω
15.4 19 m
Ω
22.2 27 m
Ω
gFS 36 S
VSD 0.73 1 V
IS2.4 A
Ciss 1810 pF
Coss 232 pF
Crss 200 pF
Rg1.6 Ω
Qg17.9 nC
Qgs 1.5 nC
Qgd 4.7 nC
tD(on) 2.5 ns
tr7.2 ns
tD(off) 49 ns
tf10.8 ns
trr 20.2 ns
Qrr 8nC
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=4.5V, VDS=10V, ID=8A
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
RDS(ON)
IS=1A,VGS=0V
DYNAMIC PARAMETERS
VGS=0V, VDS=10V, f=1MHz
Zero Gate Voltage Drain Current
VGS=1.8V, ID=3A
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=8A
VDS=VGS ID=250µA
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VGS=2.5V, ID=4A
mΩ
Electrical Characteristics (T
J=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
IDSS µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8A
Gate-Body leakage current
Static Drain-Source On-Resistance VGS=4.5V, ID=5A
Gate-Source Breakdown Voltage VDS=0V, IG=±250uA
Gate Threshold Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=10V, RL=1.2Ω,
RGEN=3Ω
Turn-On DelayTime
IF=8A, dI/dt=100A/µs
SWITCHING PARAMETERS
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO8804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=1.5V
2V
2.5V
4.5V
10
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
5
10
15
20
25
30
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=10V
VGS=4.5V
VGS=2.5V
0
5
10
15
20
25
30
35
40
0246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=2.5V
VGS=4.5V
VGS=10V
ID=5A
VGS=1.8V
VGS=1.8V
25°C
125°C
ID=5A
Alpha & Omega Semiconductor, Ltd.
AO8804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
1
2
3
4
5
0 4 8 12 16 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
500
1000
1500
2000
2500
3000
0 5 10 15 20
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Cr
ss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
1
0
m
s
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=10V
ID=8A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=83°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.
TSSOP-8 Package Data
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
RECOMMENDED LAND PATTERNPACKAGE MARKING DESCRIPTION
NOTE:
LOGO - AOS LOGO
8804 - PART NUMBER CODE.
F - FAB LOCATION
A - ASSEMBLY LOCATION
W - WEEK CODE.
L N - ASSEMBLY LOT CODE
TSSOP-8 PART NO. CODE
PART NO.
AO8804
CODE
8804
UNIT: mm
ALPHA & OMEGA
SEMICONDUCTOR, INC.
θ
0.002 −−− 0.006A1 0.05 −−− 0.15
y
θ
D
E1
L
e
E
b
c
A2
−−− 0.10−−− −−−0°8°
1.00
−−−
−−−
6.40 BSC
0.60
4.40
0.65 BSC
3.002.90
4.30
0.45
0.19
0.09
0.80
3.10
4.50
0.75
1.05
0.20
0.30
−−− 0.004−−−
0°−−− 8°
0.039
0.252 BSC
0.024
0.173
0.0259 (REF)
0.1180.114
0.169
0.018
0.007
0.004
0.031 −−−
−−− 0.122
0.177
0.030
0.041
0.008
0.012
SYMBOLS
ANOM
−−−
DIMENSIONS IN MILLIMETERS
MIN
−−− 1.20
MAX NOM
DIMENSIONS IN INCHES
MIN
−−− −−− 0.047
MAX
F A W L T
LOGO
8 8 0 4
Rev. A
TSSOP-8 Tape and Reel Data
TSSOP-8 Carrier Tape
TSSOP-8 Reel
TSSOP-8 Tape
Leader / Trailer
& Orientation
ALPHA & OMEGA
SEMICONDUCTOR, INC.
