SSM6K06FU
2009-10-07
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K06FU
High Speed Switching Applications
• Small package
• Low ON- resistance: RDS(ON) = 160 mΩ max (@VGS = 4 V)
: RDS(ON) = 210 mΩ max (@VGS = 2.5 V)
• Low gate threshold voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDS 20 V
Gate-source voltage VGSS ±12 V
DC ID 1.1
Drain current
Pulse IDP 2.2
A
Drain power dissipation (Ta = 25°C)
PD
(Note 1)
300 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.32 mm2 × 6) Figure 1.
Marking Equivalent Circuit (top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2J1D
Weight: 6.8 mg (typ.)
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2009-10-07
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA
Drain-source breakdown voltage V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V
Drain cut-off current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA
Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V
Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 0.5 A (Note 2) 1.2 ⎯ ⎯ S
ID = 0.5 A, VGS = 4 V (Note 2) ⎯ 120 160
Drain-source ON resistance RDS (ON)
ID = 0.5 A, VGS = 2.5 V (Note 2) ⎯ 160 210
mΩ
Input capacitance Ciss V
DS = 10 V, VGS = 0, f = 1 MHz ⎯ 125 ⎯ pF
Reverse transfer capacitance Crss V
DS = 10 V, VGS = 0, f = 1 MHz ⎯ 30 ⎯ pF
Output capacitance Coss V
DS = 10 V, VGS = 0, f = 1 MHz ⎯ 75 ⎯ pF
Turn-on time ton ⎯ 42 ⎯
Switching time
Turn-off time toff
VDD = 10 V, ID = 0.5 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 100 ⎯
ns
Note 2: Pulse test
Switching Time Test Circuit
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth.
(Relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device.
Dut
y
≤ 1%
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Figure 1 25.4 mm
× 25.4 mm × 1.6 mm, Cu Pad: 0.32 mm2 × 6
SSM6K06FU
2009-10-07
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RESTRICTIONS ON PRODUCT USE
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
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