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Infrared light emitting diode, top view type
SIR-341ST3F
The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and
a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
ideal for compact optical control equipment.
Applications Dimensions (Unit : mm)
Optical control equipment
Light source for remote control devices
Features
1) Compact (3.1mm).
2) High efficiency, high output PO8.4mW (IF50mA).
3) Wide radiation angle 1/216deg.
4) Peak wavelength well suited to silicon detectors (P940nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
Absolute maximum ratings (Ta = 25C)
Parameter Symbol
PD
IF
IFP∗
VR
Topr
Tstg
Limits
−25 to +85
−40 to +85
75
5
100
500
Unit
mA
V
mW
mA
°C
°C
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width=0.1msec, duty ratio 1%
Electrical and optical characteristics (Ta = 25C)
Parameter Symbol
P
O
I
E
f
C
I
R
V
F
Δλ
λ
P
θ
1 / 2
tr·tf
Min.
−
5.6
−
−
−
−
−
−
−
Typ.
8.4
18.1
1.3
−
940
40
±16
1.0
1.0
Max.
−
1.5
−
10
−
−
−
−
−
Unit
mW
mW/sr
I
F
=50mA
I
F
=50mA
I
F
=50mA
V
R
=3V
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
μA
nm
nm
V
deg
MHz
μs
Conditions
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
Notes:
1. Unspecified tolerance
shall be ±0.2.
2. Dimension in parenthesis are
show for reference.
1
1
Anode 2
2
Cathode
1.1
Max.1
2.5±1
(2.5)
5.2±0.3
Min.24
φ3.1±0.2
φ3.8±0.3
φ3.5
2− 0.5
4−0.6
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c 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.C
Data Sheet
SIR-341ST3F
Electrical and optical characteristic curves
Fig.1 Forward current falloff
FORWARD CURRENT : I
F (mA)
AMBIENT TEMPERATURE : Ta (°C)
0 20406080100
0
20
40
60
80
100
FORWARD CURRENT : I
F (mA)
FORWARD VOLTAGE : V
F (V)
0
10
20
30
40
50
012
75°C
50°C
25°C
0°C
−25°C
Fig.2 Forward current vs. forward voltage
RELATIVE OPTICAL OUTPUT : P
O
(%)
OPTICAL WAVELENGTH : λ (nm)
900 920 940 960 980
0
20
40
60
80
100
Fig.3 Wavelength
Fig.4 Emitting strength vs.
forward current
EMITTING STRENGTH : I
E
(mW/sr)
FORWARD CURRENT : I
F
(mA)
200 40 60 80 100
0
10
20
30
40
50
Fig.5 Relative emitting strength
vs.ambient temperature
RELATIVE EMITTING STRENGTH : I
E
(%)
AMBIENT TEMPERATURE : Ta (°C)
0−20 20 8040 60
10
20
50
100
200
100
20
40
60
80
RELATIVE EMITTING STRENGTH
(%)
Fig.6 Directional pattern
0100 80 60 40 20
ANGULAR DISPLACEMENT : θ (deg)RELATIVE EMITTING STRENGTH (%)
10°20°30°40°50°60°70°80°90°
10°0°
20°
30°
40°
50°
60°
70°
80°
90°
R1120A
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