TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters. 94 8488 Features Applications * * * * * * * * * * Infrared remote control units Free air transmission systems Infrared source for optical counters and card readers Extra high radiant power Low forward voltage Suitable for high pulse current operation Standard T-1 ( 3 mm) package Angle of half intensity = 25 Peak wavelength p = 940 nm High reliability Good spectral matching to Si photodetectors Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Symbol Value Reverse Voltage Parameter Test condition VR 5 Unit V Forward current IF 100 mA mA Peak Forward Current tp/T = 0.5, tp = 100 s IFM 200 Surge Forward Current tp = 100 s IFSM 1.5 A PV 210 mW Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient Document Number 81006 Rev. 1.5, 08-Mar-05 t 5 sec, 2 mm from case Tj 100 C Tamb - 55 to + 100 C Tstg - 55 to + 100 C Tsd 260 C RthJA 350 K/W www.vishay.com 1 TSAL4400 Vishay Semiconductors Basic Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Forward Voltage Typ. Max IF = 100 mA, tp = 20 ms Symbol VF Min 1.35 1.6 V IF = 1 A, tp = 100 s VF 2.6 3 V TKVF - 1.3 Temp. Coefficient of VF IF = 100 mA Reverse Current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj Radiant Intensity IF = 100 mA, tp = 20 ms Ie 16 30 IF = 1.0 A, tp = 100 s Ie 135 240 Unit mV/K 10 A 80 mW/sr 25 pF mW/sr Radiant Power IF = 100 mA, tp = 20 ms e 35 mW Temp. Coefficient of e IF = 20 mA TKe - 0.6 %/K 25 deg Peak Wavelength IF = 100 mA p 940 nm Angle of Half Intensity Spectral Bandwidth IF = 100 mA 50 nm Temp. Coefficient of p IF = 100 mA TKp 0.2 nm/K Rise Time IF = 100 mA tr 800 ns Fall Time IF = 100 mA tf 800 ns Virtual Source Diameter method: 63 % encircled energy 1.9 mm Typical Characteristics (Tamb = 25 C unless otherwise specified) 250 IF - Forward Current ( mA) PV - Power Dissipation ( mW ) 250 200 150 R thJA 100 50 200 150 100 RthJA 50 0 0 0 94 7957 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 0 96 11986 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature Document Number 81006 Rev. 1.5, 08-Mar-05 TSAL4400 Vishay Semiconductors 1000 I e - Radiant Intensity ( mW/sr ) I F - Forward Current (A) 101 I FSM = 1 A ( Single Pulse ) tp/T=0.01 0.05 100 0.1 0.5 1.0 10-1 10-2 96 11987 100 10 1 0.1 10-1 100 101 tp - Pulse Duration ( ms ) 102 100 10 4 1000 e - Radiant Power ( mW ) I F - Forward Current ( mA ) 104 Figure 6. Radiant Intensity vs. Forward Current Figure 3. Pulse Forward Current vs. Pulse Duration 10 3 10 2 t p = 100 s tp / T = 0.001 10 1 10 0 0 1 2 3 100 10 1 0.1 10 0 4 V F - Forward Voltage ( V ) 13600 13602 10 1 10 2 10 3 I F - Forward Current ( mA ) 10 4 Figure 7. Radiant Power vs. Forward Current Figure 4. Forward Current vs. Forward Voltage 1.2 1.6 1.1 1.2 I F = 10 mA I e rel ; e rel V Frel - Relative Forward Voltage 101 102 103 I F - Forward Current ( mA ) 14309 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0.7 0 94 7990 20 40 60 80 T amb - Ambient Temperature ( C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Document Number 81006 Rev. 1.5, 08-Mar-05 0 -10 0 10 100 94 7993 50 100 140 T amb - Ambient Temperature ( C ) Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 3 TSAL4400 Vishay Semiconductors 0 Ie rel - Relative Radiant Intensity e rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 I F = 100 mA 0 890 940 990 - Wavelength ( nm ) 14291 Figure 9. Relative Radiant Power vs. Wavelength 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.6 0.4 0.2 0 0.2 0.4 0.6 14328 Figure 10. Relative Radiant Intensity vs. Angular Displacement Package Dimensions in mm 95 10913 www.vishay.com 4 Document Number 81006 Rev. 1.5, 08-Mar-05 TSAL4400 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81006 Rev. 1.5, 08-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1