APTGT100SK170TG
APTGT100SK170TG – Rev 1 July, 2006
www.microsemi
.
com 1 - 5
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1700 V
TC = 25°C 150
IC Continuous Collector Current TC = 80°C 100
ICM Pulsed Collector Current TC = 25°C 200
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 560 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 200A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
0/VBUS NT C1
OUT
Q1
V BUS NT C2
0/VBUS SENSE
G1
E1
NTC2
OUT
OUT
E1
NTC1
VBUS
0/ VB US
SENSE
0/ VB US
SENSE
0/ VB US
G1
VCES = 1700V
IC = 100A @ Tc = 80°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching freque ncy up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Buck chopper
Trench + Field Stop IGBT®
Power Modul
e
APTGT100SK170TG
APTGT100SK170TG – Rev 1 July, 2006
www.microsemi
.
com 2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 250 µA
Tj = 25°C 2.0 2.4
VCE(sat) Collector Emitter Saturation Voltage VGE = 15V
IC = 100A Tj = 125°C 2.4 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 2mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 9
Coes Output Capacitance 0.36
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 0.3
nF
Td(on) Tur n-o n Delay Ti me 370
Tr Rise Time 40
Td(off) Turn-off Delay Time 650
Tf Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 100A
RG = 4.7 Ω 180
ns
Td(on) Turn-on Delay Time 400
Tr Rise Time 50
Td(off) Turn-off Delay Time 800
Tf Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 100A
RG = 4.7 Ω 300
ns
Eon Tur n-on Switchi ng E nergy Tj = 125°C 32
Eoff Turn-off Switching Energy
VGE = 15V
VBus = 900V
IC = 100A
RG = 4.7 Ω Tj = 125°C 31
mJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1700 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 100 A
Tj = 25°C 1.8 2.2
VF Diode Forward Voltage IF = 100A Tj = 125°C 1.9 V
Tj = 25°C 385
trr Reverse Recovery Time Tj = 125°C 490 ns
Tj = 25°C 25
Qrr Reverse Recovery Charge Tj = 125°C 42 µC
Tj = 25°C 11
Er Reverse Recovery Energy
IF = 100A
VR = 900V
di/dt =1000A/µs
Tj = 125°C 21 mJ
APTGT100SK170TG
APTGT100SK170TG – Rev 1 July, 2006
www.microsemi
.
com 3 - 5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
B 25/85 T
25 = 298.15 K 3952 K
−
=
TT
B
R
RT
11
exp
25
85/25
25
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.22
RthJC Junction to Case Thermal Resistance Diode 0.39
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 2.5 4.7 N.m
Wt Package Weight 160 g
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKE D " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
T: Ther
m
istor temperature
RT: Thermistor value at T
APTGT100SK170TG
APTGT100SK170TG – Rev 1 July, 2006
www.microsemi
.
com 4 - 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
175
200
00.511.522.533.54
VCE (V)
IC (A)
Output Ch aracteristics
VGE=15V
VGE=13V
VGE=20V
VGE
=9V
0
40
80
120
160
200
012345
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
0
25
50
75
100
125
150
175
200
5 6 7 8 9 10 11 12 13
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eoff
Er
0
20
40
60
80
100
0 25 50 75 100 125 150 175 200
IC (A)
E (mJ)
VCE = 900V
VGE = 15V
RG
= 4.7Ω
TJ = 125°C
Eon
Eoff
Er
0
12.5
25
37.5
50
62.5
75
87.5
100
0 5 10 15 20 25 30 35 40
Gate Resistance (ohms)
E (mJ)
VCE = 900V
VGE =15V
IC = 100A
TJ = 125°C
Switching Energy Losses vs Gate Resistanc
e
Reverse Bias Safe Operating Area
0
50
100
150
200
250
0 400 800 1200 1600 2000
VCE (V)
IC (A)
VGE
=15V
TJ=125°C
R
G
=4.7Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT100SK170TG
APTGT100SK170TG – Rev 1 July, 2006
www.microsemi
.
com 5 - 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
25
50
75
100
125
150
175
200
0 0.5 1 1.5 2 2.5 3
VF (V)
IF (A)
hard
switching
ZCS
ZVS
0
5
10
15
20
25
0 20406080100120140
IC (A)
Fmax, Operating Frequency (kHz)
VCE=900V
D=50%
RG=4.7 Ω
TJ=125°C
TC=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
M icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the spe cificatio ns and i nfo rmatio n co nta ine d he rein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
