Features * Supply Voltage 5 V (Typically) * Very Low Power Consumption: 150 mW (Typically) for -1 dBm Output Level * Very Good Sideband Suppression by Means of Duty Cycle Regeneration of the LO * * * * * * Input Signal Phase Control Loop for Precise 90 Phase Shifting Power-down Mode Low LO Input Level: -10 dBm (Typically) 50-W Single-ended LO and RF Port LO Frequency from 100 MHz to 1 GHz SO16 Package01/03 Benefits * No External Components Required for Phase Shifting * Adjustment Free, Hence Saves Manufacturing Time * Only Three External Components Necessary, this Results in Cost and Board Space 1000-MHz Quadrature Modulator Saving U2790B Electrostatic sensitive device. Observe precautions for handling. Description The U2790B is a 1000-MHz quadrature modulator using Atmels advanced UHF process. It features a frequency range from 100 MHz up to 1000 MHz, low current consumption, and single-ended RF and LO ports. Adjustment-free application makes the direct converter suitable for all digital radio systems up to 1000 MHz, e.g., GSM, ADC, JDC. Figure 1. Block Diagram SPU BBAI 8 BBAI 12 15 Phadj 1 Power up 7 LO i PU 6 Duty cycle regenerator Frequency doubler 0 90 90/control loop VS 5,4 RFO S 3 16 BBBi 9 BBBI 10 2,11,13,14 GND Rev. 4583A-CELL-01/03 1 Pin Configuration Figure 2. Pinning SO16 PU 1 16 Phadj GND 2 15 Phadj RFO 3 14 GND VS 4 13 GND VS 5 12 LOi SPD 6 11 GND BBAi 7 10 BBBi BBAi 8 9 BBBi Pin Description 2 Pin Symbol Function 1 PU 2, 11, 13, 14 GND Ground Power-up input 3 RFo RF output 4, 5 VS Supply voltage 6 SPU Settling time power-up 7 BBAi Baseband input A 8 BBAi Baseband input A inverse 9 BBBi Baseband input B 10 BBBi Baseband input B inverse 12 LOi LO input 15, 16 Phadj Phase adjustment (not necessary for regular applications) U2790B 4583A-CELL-01/03 U2790B Absolute Maximum Ratings Parameters Symbol Value Unit Supply voltage VS 6 V Input voltage Vi 0 to VS V Tj 125 C TStg -40 to +125 C Symbol Value Unit Junction temperature Storage temperature range Operating Range Parameters Supply voltage range Ambient temperature range VS 4.5 to 5.5 V Tamb -40 to +85 C Symbol Value Unit RthJA 110 K/W Thermal Resistance Parameters Junction ambient SO16 Electrical Characteristics Test conditions (unless otherwise specified): VS = 5 V, Tamb = 25C, referred to test circuit, system impedance ZO = 50 W, fLO = 900 MHz, PLO = -10 dBm, VBBi = 1 Vpp differential. No. Parameters 1.1 Supply voltage range 1.2 Supply current Test Conditions Pin Symbol Min. 4, 5 VS 4.5 4, 5 IS 24 7-8, 9-10 Max. Unit Type* 5.5 V A 30 37 mA A VBBi 1000 1500 mVpp D 3.2 kW D 250 MHz D 2.5 2.65 V A 0.1 <1 mV/C D 1000 MHz D -5 dBm D W D 2 Baseband Inputs 2.1 Input-voltage range (differential) 2.2 Input impedance (single ended) ZBBi 2.3 Input-frequency range (5) fBBi 0 2.4 Internal bias voltage VBBb 2.35 2.5 Temperature coefficient TCBB 3 Typ. LO Input 3.1 Frequency range fLOi 50 3.2 Input level (1) PLOi - 12 3.3 Input impedance ZiLO 12 - 10 50 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. The required LO level is a function of the LO frequency. 2. In reference to an RF output level -1 dBm and I/Q input level of 400 mVpp differential. 3. Sideband suppression is tested without connection at Pins 15 and 16. For higher requirements a potentiometer can be connected at these pins. 4. For Tamb = -30C to +85C and VS = 4.5 to 5.5 V. 5. By low impedance signal source. 3 4583A-CELL-01/03 Electrical Characteristics (Continued) Test conditions (unless otherwise specified): VS = 5 V, Tamb = 25C, referred to test circuit, system impedance ZO = 50 W, fLO = 900 MHz, PLO = -10 dBm, VBBi = 1 Vpp differential. No. Parameters Test Conditions Pin Symbol Min. 3.4 Voltage standing wave ratio VSWRLO 3.5 Duty cycle range DCRLO 0.4 PRFo -5 -1 4 RF Output 4.1 Output level 4.2 LO suppression (2) fLO = 900 MHz fLO = 150 MHz LORFo 30 32 4.3 Sideband suppression (2, 3) fLO = 900 MHz fLO = 150 MHz SBSRFo 35 30 4.4 Phase error (4) 4.5 Amplitude error 3 VBBi = 2 V, VBBi = 3 V VBBi = VBBi = 2.5 V 1.4 2 D 0.6 D Type* 35 35 dB B 40 35 dB B Pe <1 deg. D Ae < +0.25 dB D NFL -132 -144 dBm/Hz D VSWRRF 1.6 4.7 VSWR 4.8 3rd-order baseband harmonic suppression SBBH 4.9 RF harmonic suppression 35 +2 Unit B Noise floor 2 D 45 dB D SRFH 35 dB D 4, 5 IPU 10 A D 6 to 3 tsPU 10 s D V D V D Power-up Mode 5.1 Supply current VPU 0.5 V, VPU = 1 V 5.2 Settling time CSPU = 100 pF, CLO = 100 pF CRFo = 1 nF 6 Max. dBm 4.6 5 Typ. 1 Switching Voltage 6.1 Power-on 1 VPUon 6.2 Power-up 1 VPUdown 4 1 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. The required LO level is a function of the LO frequency. 2. In reference to an RF output level -1 dBm and I/Q input level of 400 mVpp differential. 3. Sideband suppression is tested without connection at Pins 15 and 16. For higher requirements a potentiometer can be connected at these pins. 4. For Tamb = -30C to +85C and VS = 4.5 to 5.5 V. 5. By low impedance signal source. 4 U2790B 4583A-CELL-01/03 U2790B Diagrams Figure 3. Typical Single Sideband Output Spectrum at VS = 4.5 V and VS = 5.5 V, fLO = 900 MHz, PLO = -10 dBm, VBBI = 1 VPP (differential) Tamb = 25C Figure 4. Typical GMSK Output Spectrum 5 4583A-CELL-01/03 Figure 5. Demo Board Layout Figure 6. OIP3 versus Tamb, LO = 150 MHz, Level -20 dBm 16 VBBI = 0.2 VPP IP3 (dBm) 12 VBBi= 0.4 VPP 8 4 0 -40 -20 0 20 40 60 80 100 Temperature (C) 6 U2790B 4583A-CELL-01/03 U2790B Figure 7. OIP3 versus Tamb, LO = 900 MHz, Level - 10 dBm 12 10 VBBi = 0.4 VPP IP3 (dBm) 8 6 VBBi = 1.0 VPP 4 2 0 -40 -20 0 20 40 60 80 100 Temperature (C) Figure 8. Output Power versus Tamb 0.5 Output Power (dBm) 0 FLO = 150 MHz -0,5 -1 -1.5 FLO = 900 MHz -2 -2.5 -40 -20 0 20 40 60 80 100 Temperature (C) Figure 9. Supply Current versus Tamb Supply Current (mA) 40 30 20 10 0 -40 -20 0 20 40 60 80 100 Temperature (C) 7 4583A-CELL-01/03 Figure 10. Typical S11 Frequency Response of the RF Output Figure 11. Typical VSWR Frequency Response of the RF Output 8 U2790B 4583A-CELL-01/03 U2790B Figure 12. Typical S11 Frequency Response of the LO Input Figure 13. Typical VSWR Frequency Response of the LO input 10 VSWR 8 6 4 2 0 1000 100 LO Frequency (MHz) 9 4583A-CELL-01/03 Figure 14. Typical Supply Current versus Temperature at VS = 5 V Supply Current ( mA ) 60 50 40 30 20 10 -40 -20 0 20 40 60 80 100 Temperature (C) Figure 15. Typical Output Power versus LO-Frequency at Tamb = 25C, VBBI = 230 mVPP (differential) Output Power ( dBm ) 0 -5 0 200 400 600 800 1000 1200 1400 LO Frequency ( MHz ) Figure 16. Typical required VBBi Input Signal (differential) versus LO Frequency for PO = 0 dBm and PO = - 2 dBm VBBi (differential) (VPP) 2 1 0 0 200 400 600 800 1000 1200 1400 LO Frequency (MHz) 10 U2790B 4583A-CELL-01/03 U2790B Figure 17. Typical useful LO Power Range versus LO Frequency at Tamb = 25C 0 LO Power (dBm) -10 -20 -30 -40 -50 0 200 400 600 800 1000 1200 1400 LO Frequency (MHz) Figure 18. Application Circuit PU 1n CPU A inv SPU 220n A 220n BBAi 1 6 8 Power down 5,4 7 BBAi Baseband 100p LO processing 12 10k VS LOi Phadj B 220n BBBi Duty cycle regenerator Frequency doubler Power down VS VS 100n 1n 0 90 90/ control loop S 3 15 OUT RFO 16 9 10 BBBi 2,11,13,14 220n Binv GND 11 4583A-CELL-01/03 Figure 19. Demo Board Layout Application Notes Noise Floor and Settling Time In order to reduce noise on the power-up control input and improve the wide-off noise floor of the 900-MHz RF output signal, capacitor CPU should be connected from Pin 6 to ground in the shortest possible way. The settling time has to be considered for the system under design. For GSM applications, a value of CPU = 1 nF defines a settling time, tsPU, equal or less than 3 ms. This capacitance does not have any influence on the noise floor within the relevant GSM mask. For mobile applications the mask requirements can be achieved very easily without CPU. A significant improvement of the wide-off noise floor is obtainable with CPU greater than 100 nF. Such values are recommended for applications where the settling time is not critical such as in base stations. Coupling capacitors for LOi and RFO also have a certain impact on the settling time. The values used for the measurements are CLOi = 100 pF and CRFo = 1 nF. Baseband Coupling The U2790B-FP (SO16) has an integrated biasing network which allows AC coupling of the baseband signal at a low count of external components. The bias voltage is 2.5 V 0.15 V. Figure 19 shows the baseband input circuitry with a resistance of 3.2 kW for each asymmetric input. The internal DC offset between A and A, and B and B is typically < 1 mV with a maximum of + 3 mV. DC coupling is also possible with an external DC voltage of 2.5 0.15 V. 12 U2790B 4583A-CELL-01/03 U2790B Figure 20. Baseband Input Circuitry Mixer input stage 3.2 kW A , B A, B RF Output Circuitry LO Input Circuitry VS RFO 20 W 3 Figure 21. LO Input Circuitry LO 12 50 W 20 pF 13 4583A-CELL-01/03 Ordering Information Extended Type Number Package Remarks U2790B-MFP SO16 Tube U2790B-MFPG3 SO16 Taped and reeled Package Information Package SO16 Dimensions in mm 5.2 4.8 10.0 9.85 3.7 1.4 0.25 0.10 0.4 1.27 6.15 5.85 8.89 16 0.2 3.8 9 technical drawings according to DIN specifications 1 14 8 U2790B 4583A-CELL-01/03 Atmel Headquarters Atmel Operations Corporate Headquarters Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 487-2600 Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland TEL (41) 26-426-5555 FAX (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimhatsui East Kowloon Hong Kong TEL (852) 2721-9778 FAX (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL (81) 3-3523-3551 FAX (81) 3-3523-7581 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France TEL (33) 2-40-18-18-18 FAX (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France TEL (33) 4-42-53-60-00 FAX (33) 4-42-53-60-01 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany TEL (49) 71-31-67-0 FAX (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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