JFET VHF Amplifier
N–Channel – Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDS 25 Vdc
Drain–Gate Voltage VDG 25 Vdc
Gate–Source Voltage VGS –25 Vdc
Gate Current IG10 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Junction Temperature Range TJ125 °C
Storage Temperature Range Tstg –65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –10 µAdc, VDS = 0) V(BR)GSS –25 – Vdc
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
IGSS –
––2.0
–2.0 nAdc
µAdc
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 2.0 nAdc) VGS(off) – –8.0 Vdc
Gate–Source Voltage
(VDS = 15 Vdc, ID = 0.2 mAdc) VGS –0.5 –7.5 Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0 Vdc) IDSS 2.0 20 mAdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance(1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
yfs2000
1600 7500
–
mhos
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yis) – 800 mhos
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yos) – 200 mhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss – 7.0 pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss – 3.0 pF
1. Pulse Test; Pulse Width 630 ms, Duty Cycle 10%.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2 1Publication Order Number:
MPF102/D
MPF102
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
123
1 DRAIN
2 SOURCE
3
GATE
MPF102
http://onsemi.com
2
f, FREQUENCY (MHz)
30
10
bis @ IDSS
f, FREQUENCY (MHz)
5.0
Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
f, FREQUENCY (MHz)
20
f, FREQUENCY (MHz)
10
Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos)
gis, INPUT CONDUCTANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300 500 700 1000
bis, INPUT SUSCEPTANCE (mmhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|bfs|, FORWARD SUSCEPTANCE (mmhos)
grs, REVERSE TRANSADMITTANCE (mmhos)
brs, REVERSE SUSCEPTANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
3.0
0.05
0.07
0.1
0.2
0.3
0.7
0.5
1.0
2.0
10 20 30 50 70 100 200 300 500 700 1000
10 20 30 50 70 100 200 300 500 700 1000 0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10 20 30 50 70 100 200 300 500 700 1000
bis @ 0.25 IDSS
gis @ IDSS
gis @ 0.25 IDSS
brs @ IDSS
0.25 IDSS
grs @ IDSS, 0.25 IDSS
gfs @ IDSS
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
gfs @ 0.25 IDSS
MPF102
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3
Figure 5. S11s Figure 6. S12s
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
1.0
0.9
0.8
0.7
0.6
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.6
0.5
0.4
0.3
0.3
0.4
0.5
0.6
900 900
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
ID = 0.25 IDSS
ID = IDSS
100
200
300
400
600 700
800
900
500
ID = IDSS, 0.25 IDSS
900
500
800
700
600
500
400
300 200
100
ID = 0.25 IDSS
ID = IDSS 100
200
300
400
900
600
700
800
900
800
600
400
300
200
200
100 ID = 0.25 IDSS
ID = IDSS
900
100 500
700
300
400
500
600
700
800
Figure 7. S21s Figure 8. S22s
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
MPF102
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4
f, FREQUENCY (MHz)
10
gig @ IDSS
f, FREQUENCY (MHz)
0.5
Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg)
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog)
gig, INPUT CONDUCTANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300 500 700 1000
big, INPUT SUSCEPTANCE (mmhos)
gfg, FORWARD TRANSCONDUCTANCE (mmhos)
bfg, FORWARD SUSCEPTANCE (mmhos)
grg, REVERSE TRANSADMITTANCE (mmhos)
brg, REVERSE SUSCEPTANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
0.3
0.01
0.1
0.2
10 20 30 50 70 100 200 300 500 700 1000
10 20 30 50 70 100 200 300 500 700 1000 0.01
0.02
0.03
0.3
10 20 30 50 70 100 200 300 500 700 1000
big @ 0.25 IDSS
big @ IDSS
grg @ 0.25 IDSS
gfg @ IDSS
gfg @ 0.25 IDSS
brg @ 0.25 IDSS
bog @ IDSS, 0.25 IDSS
gog @ IDSS
gog @ 0.25 IDSS
0.2 0.005
0.007
0.02
0.03
0.05
0.07
0.1
0.05
0.07
0.1
0.2
0.5
0.7
1.0
brg @ IDSS
0.25 IDSS
gig @ IDSS, 0.25 IDSS
bfg @ IDSS
MPF102
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5
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
Figure 13. S11g Figure 14. S12g
Fi
g
ure 15. S
21g
Fi
g
ure 16. S
22g
0.7
0.6
0.5
0.4
0.3
0.04
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.03
0.02
0.01
0.0
0.01
0.02
0.03
0.04
0.1
900
900
800
700
600
500
300
200
100
800
700
600
500
400
300
200
100
ID = 0.25 IDSS
ID = IDSS
100 200 300 400
500
600
700
800
900
900
600
700
800
ID = 0.25 IDSS
ID = IDSS
100
900
100
900
ID = 0.25 IDSS
ID = IDSS
1.5
100 400
500
600 700
800 900
ID = IDSS, 0.25 IDSS
COMMON GATE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
MPF102
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6
PACKAGE DIMENSIONS
CASE 29–11
ISSUE AL
TO–92 (TO–226AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
YLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
MPF102
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7
Notes
MPF102
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8
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