EE-SY113 - N/A - Product.Network

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EE-SY110/113/171

Compact Reflective Phototransistor

Output

Low-profiled model with an overall

height of only 3 mm (EE-SY171)

Models with a circuit integrated into

molded housing provide special cost

advantages (EE-SY110/113)

Model with a filter reduces effects of

external visible light (EE-SY113)

Ordering Information

Appearance Sensing method Sensing

distance Sensing object Output

configuration Weight Part number

Reflective 3.5 mm White paper with

reflection factor

Phototransistor 0.3 g EE-SY171

4.4 mm

Approx. 0.5 g EE-SY113

5mm Approx. 0.4 g EE-SY110

Specifications

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ABSOLUTE MAXIMUM RATINGS (TA=25

°C)

Item Symbol Rated value

Input Forward current IF50 mA*

Pulse forward current IFP 1A**

Reverse voltage VR4V

Output Collector-emitter voltage VCEO 30 V

Collector current IC20 mA

Collector dissipation PC100 mW*

Ambient temperature Operating Topr -40°Cto85

°C (-40°F to 185°F)

Storage Tstg -40°Cto85

°C (-40°F to 185°F)

*Refer to Engineering Data if the ambient temperature is not within the normal room temperature range.

**This value was measured with a pulse width of 10 µs and a repeating frequency of 100 Hz.

EE-SY110/113/171 EE-SY110/113/171

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CHARACTERISTICS (TA=25

°C)

Item Symbol EE-SY110 EE-SY171 EE-SY113

Value Condition Value Condition Value Condition

Emitter Forward

voltage VF1.5 V max. IF=30mA 1.5 V max. IF=30mA 1.5 V max. IF=30mA

Reverse

current IR10 µAmax. VR=4V 10 µAmax. VR=4V 10 µAmax. VR=4V

Peak emission

wavelength λp(L) 940 nm typ. IF=20mA 940 nm typ. IF=20mA 940 nm typ. IF=20mA

Receiver Dark current ID200 nA max. VCE =10V

x200 nA max. VCE =10V

Peak spectral

sensitivity

wavelength

λp(P) 850 nm typ. VCE =10V 850 nm typ. VCE =10V 850 nm typ. VCE =10V

Combination Light current IL200 to

2,000 µAIF=20mA

VCE =10V

White paper

with a

reflection

factor of

90% at a

distance of

5mm

50 to 500 µA IF=20mA

VCE =10V

White paper

with a

reflection

factor of

90% at a

distance of

3.5 mm

160 to

1,600 µAIF=20mA

VCE =10V

White paper

with a

reflection

factor of

90% at a

distance of

4.4 mm

Leakage

current ILEAK 2µAmax. IF=20mA

VCE =10V* 200 nA max. IF=20mA

VCE =10V* 2µAmax. IF=20mA

VCE =10V*

Rising time** tr 30 µstyp. VCC =5V

Ω

30 µstyp. VCC =5V

Ω

30 µstyp. VCC =5V

Ω

Falling time** tf 30 µstyp. RL=1k

Ω

IL=1mA 30 µstyp. RL=1k

Ω

IL=1mA 30 µstyp. RL=1k

Ω

IL=1mA

*The sensing object reflects no light.

**The following illustrations show the rising time, tr, and the falling time, tf.

Input VCC

Output

Input t

Output t

90%

10%

Sensing object

ineerin

Data

Note: The operating conditions of the photomicrosensor must be within the absolute maximum rating ranges.

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TEMPERATURE CHARACTERISTICS

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INPUT CHARACTERISTICS (TYPICAL)

Ambient temperature TA(°C)

Forward current I (mA)

IF,P

Forward voltage VF(V)

Forward current I (mA)

TA=--30°C

TA=+25°C

TA=+70°C

Collector dissipation PC(mW)

EE-SY110/113/171

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INPUT/OUTPUT CHARACTERISTICS (TYPICAL)

EE-SY110

Forward current IF(mA)

Light current I ( A)

Lµ

EE-SY171

Light current I ( A)

Lµ

Forward current IF(mA)

TA=25°C

VCE =10V

Sensing object: Paper with

a reflection factor of 90%

Sensing distance: 5 mm

Sensing object: White paper

with a reflection factor of 90%

Sensing distance: 5 mm

VCE =10V

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OUTPUT CHARACTERISTICS (TYPICAL)

EE-SY110 EE-SY171

Light current I (mA)

Collector-emitter voltage VCE (V)

IF=30mA

IF=20mA

IF=10mA

White paper (reflection

factor: 90%)

Sensing distance:5 mm

IF=40mA

Collector-emitter voltage VCE (V)

Light current I ( A)

Lµ

IF=40mA

IF=30mA

IF=20mA

IF=10 mA

Sensing object: Paper with

a reflection factor of 90%

Sensing distance: 3.5 mm

TA=25°C

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LIGHT CURRENT TEMPERATURE DEPENDENCY (TYPICAL)

EE-SY110/113 EE-SY171

Relative light current I (%)

Ambient temperature TA(°C)

BasedontheI

Lvalue

at 25 °C as 100%.

Sensing object: White

paper with a reflection

factor of 90%

Relative light current I (%)

Ambient temperature TA(°C)

Sensing object: Paper with a reflection

factor of 90%

IF=20mA

VCE =10V

Sending distance: 3.5 mm

IF=20mA

VCE =10V

Sending distance: 5 mm

EE-SY110/113/171 EE-SY110/113/171

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LEAKAGE CURRENT

CHARACTERISTICS (TYPICAL)

EE-SY171

Current leakage I (nA)

LEAK

Forward current IF(mA)

Sensing object: Object with no

light reflection

Sensing distance: Infinite

TA=25°C

VCE =10V

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SENSING DISTANCE

CHARACTERISTICS 2 (TYPICAL)

EE-SY171

Light current I ( A)

Lµ

Distance d (mm)

(a)

(b)

(c)

(d)

(e)

(f)

TA=25°C

IF=20mA

VCE =10V

a: Aluminum

b: White paper with a

reflection factor of 90%

c: Pink paper

d: OHP

e: Tracing paper

f: Black sponge

EE-SY110

Relative light current I (%)

Distance d2(mm)

TA=25°C

IF=20mA

VCE =10V

Moving

direction

d1=3mm

d1=5mm

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SENSING DISTANCE

CHARACTERISTICS 1 (TYPICAL)

EE-SY110

Distance d (mm)

Light current I ( A)

Lµ

(b)

(c)

(d)

(a)

(a): 15 x 15 mm2

(b): 10 x 10 mm2

(c): 5 x 5 mm2

(d): 2 x 2 mm2

Sensing object: White paper with a

reflection factor of 90%

TA=25°C

IF=20mA

VCE =10V

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SENSING DISTANCE

CHARACTERISTICS (TYPICAL)

EE-SY171

Distance d (mm)

Light current I ( A)

Lµ

TA=25°C

IF=20mA

VCE =10V

Paper with a

reflection factor

of 90%

Tracing paper

OHP sheet

Black paper

EE-SY171

Relative light current I (%)

Distance d2(mm)

TA=25°C

IF=20mA

VCE =10V

Sensing object: Paper with

a reflection factor of 90%

d1=3mm

d1=4mm

d1=5mm

EE-SY110/113/171

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SWITCHING CHARACTERISTICS (RISE TIME, TYPICAL)

EE-SY110/113

Light current IL(µA)

RL=1k

Ω

RL= 470 Ω

RL=100 Ω

90%

10%

0Input

Output

Input IL

Vcc

OUT

TA=25°C

VCE =10V RL=4.7k

Ω

Rising time tr ( s)

EE-SY171

Rising time tr ( s)

Light current IL(µA)

RL=4.7 k

Ω

RL=1k

ΩRL= 470 Ω

RL= 100 Ω

TA=25°C

VCE =10V

Sensing distance:

3.5 mm

Sensing object: Paper

with a reflection factor

of 90%

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SWITCHING CHARACTERISTICS (FALL TIME, TYPICAL)

EE-SY110/113

Falling time tf ( s)µ

Light current IL(µA)

90%

10% t

0tr

RL=4.7k

Ω

RL=1k

Ω

RL= 470 Ω

RL= 100 Ω

Input

Output

Input ILVcc

OUT

TA=25°C

VCE =10V

EE-SY171

Light current IL(µA)

Falling time tf ( s)

RL=4.7k

Ω

RL=1k

Ω

RL= 470 Ω

RL= 100 Ω

Sensing distance: 3.5 mm

Sensing object: Paper with

a reflection factor of 90%

TA=25 °C

VCE =10V

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SENSING ANGLE CHARACTERISTICS (TYPICAL)

EE-SY110

Relative light current I (%)

VCE =10V

IF=20mA

Sensing object:

White paper with a

reflection factor of

90%

Sensing distance: 5 mm

Angle deviation Θ(°)

+θ−θ

EE-SY171

TA=25 °C

IF=20mA

VCE =10V

Sensing object:

Paper with a reflection

factor of 90%

Relative light current I (%)

Angle deviation Θ(°)

+θ

−θ

Sensing distance: 5 mm

EE-SY110/113/171 EE-SY110/113/171

Dimensions

Unit: mm (inch)

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EE-SY171

4.2

2.5

5.5

Two, 2 dia.

Two, 1.2 dia.

Anode mark

0°to 30°

Four, 0.5

Four, 0.25

Internal Circuit

(All Models)

Terminal No. Name

A Anode

K Cathode

C Collector

E Emitter

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EE-SY113

0.7

6.2 2.5

2.4

15.2

15 to 18

Four, 0.5

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EE-SY110

4.6

4.5

2.5

0.6

2.5

4.81.9 0.6

0.5

15 to 18

Θ=0to13

15.2±0.2

8+0

-- 0.2

Four, 0.5

Four, R1.5

Four, 0.25

EE-SY110/113/171

Precautions

Refer to the Technical Information Section for general precautions.

Cat. No. EO5DAX4 1/99 Specifications subject to change without notice. Printed in U.S.A.

OMRON ELECTRONICS, INC.

OneEastCommerceDrive

Schaumburg, IL 60173

NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.

1-800-55-OMRON

OMRON CANADA, INC.

885 Milner Avenue

Scarborough, Ontario M1B 5V

416-286-6465

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