
EE-SY110/113/171
Compact Reflective Phototransistor
Output
Low-profiled model with an overall
height of only 3 mm (EE-SY171)
Models with a circuit integrated into
molded housing provide special cost
advantages (EE-SY110/113)
Model with a filter reduces effects of
external visible light (EE-SY113)
Ordering Information
Appearance Sensing method Sensing
distance Sensing object Output
configuration Weight Part number
Reflective 3.5 mm White paper with
reflection factor
f
Phototransistor 0.3 g EE-SY171
4.4 mm
Approx. 0.5 g EE-SY113
5mm Approx. 0.4 g EE-SY110
Specifications
ABSOLUTE MAXIMUM RATINGS (TA=25
°C)
Item Symbol Rated value
Input Forward current IF50 mA*
Pulse forward current IFP 1A**
Reverse voltage VR4V
Output Collector-emitter voltage VCEO 30 V
Collector current IC20 mA
Collector dissipation PC100 mW*
Ambient temperature Operating Topr -40°Cto85
°C (-40°F to 185°F)
Storage Tstg -40°Cto85
°C (-40°F to 185°F)
*Refer to Engineering Data if the ambient temperature is not within the normal room temperature range.
**This value was measured with a pulse width of 10 µs and a repeating frequency of 100 Hz.