Single Phase Rectifier Bridges PSB 75 IdAVM VRRM = 70A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type ~ ~ PSB 75/08 PSB 75/12 PSB 75/14 PSB 75/16 PSB 75/18 Symbol Test Conditions IdAVM IFSM TC = 85C, module TVJ = 45C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 70 1000 1100 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 850 1000 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 5000 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4000 4100 A2 s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 5 5 235 Nm Nm g i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM 0.3 8.0 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25C For power-loss calculations only TVJ = TVJM 1.6 0.8 8 V V m per diode; DC current per module 1.28 0.32 K/W K/W RthJK per diode; DC current per module 1.38 0.345 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 17.6 17.6 50 mm mm m/s2 TVJ = 25C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/ PSB 75 10 IF(OV) -----IFSM 200 IFSM (A) TVJ=45C TVJ=150C A 160 1.6 2 As 850 1.4 T=150C 120 1000 4 TVJ=45C 1.2 80 1 TVJ=150C 0 VRRM 40 0.8 1/2 VRRM T=25C IF 0 VF 1 0.6 1 VRRM 10 1.5 V 0.4 0 1 10 Fig. 1 Forward current versus voltage drop per diode 200 [W] 175 10 2 3 1 2 3 t[ms] 10 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 85 TC PSB 75 0.3 0.18 = RTHCA [K/W] 0.43 90 95 100 150 105 125 0.68 110 80 DC [A] 70 sin.180 rec.120 rec.60 60 rec.30 50 115 100 120 1.18 75 DC sin.180 rec.120 rec.60 rec.30 50 25 PVTOT 0 125 40 2.68 135 140 145 C 60 0 [A] Tamb 30 130 150 20 IFAVM 40 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 20 10 IdAV 0 50 100 150 200 T (C) C Fig.5 Maximum forward current at case temperature 2 K/W Z thJK Z thJC 1.5 1 0.5 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/