NOT FOR NEW DESIGNS
4-1
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
InGaP/HBT GaN HEMT SiGe Bi-CMOS
13
2
4
RF OUTRF IN
GND
GND
MARKING - R2
RF3818
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 3GHz
• Cellular Basestation Amplifiers and
Transceivers
• Gain Stage or Driver Amplifiers for Linear and
Saturated Amplifiers
• Narrow and Broadband Commercial and
Military Radio Designs
The RF3818 is a high-performance InGaP/GaAs general
purpose RF and microwave gain block amplifier. This
50Ω amplifier is based on a reliable HBT MMIC design,
providing unsurpassed performance for many small-sig-
nal applications. Designed with an external bias resistor,
the RF3818 provides high output power and high gain
over broad frequency range. This low-cost amplifier is
packaged in a thermally efficient, industry standard,
ceramic Micro-X package providing excellent ThetaJC
performance.
• Reliable, Low-Cost HBT Design
• 19.0dB Gain, +18.2dBm P1dB@1.0GHz
• High P1dB of +17.9dBm@3.0GHz
• Single 6V Power Supply Operation
•50Ω I/O Matched
• T hermally-Efficient Pac kage
RF3818 Cascadable Broadband GaAs MMIC Am plifier DC to
3GHz (Bulk: 25 pi ece increment)
RF3818SB 5-piece Sample Bag
RF3818SR 100-piece Reel
RF3818TR7 7” Reel (1,000 pieces)
RF3818PCBA-410Evaluat ion Board
0
Rev A2 041013
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
0.070
sq.
45°
+ 1°
R2
0.055
+ 0.005
0.020
+ 0.002
0.040
+ 0.002
0.200 sq.
Typ
Package Style: Micro-X, 4-Pin, Ceramic
Proposed
NOT FOR NEW DESIGNS
9
Proposed
4-2
RF3818
Rev A2 041013
NOT FOR NEW DESIGNS
Please contact
RF Micro Devices
Applications Engineering
at (336) 678-5570
for more information.
