Mar. 2002
OUTLINE DRAWING
Dimensions
in mm
TO-220F
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
2.54
13.5 MIN3.6 5.0
1.2
8.5
10.5 MAX
5.2
4.5
231
2
1
3
1
2
3
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
17
2.54
2.8
0.5 2.6
∗ Measurement point of
case temperature
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Contactless AC switches, light dimmer, electric flasher unit, hair drier, control of household equipment
such as TV sets · refrigerator · washing machine · electric fan,
other general purpose control applications
BCR16PM
•IT (RMS) ......................................................................16A
•V
DRM ....................................................................... 600V
•I
FGT !, IRGT !, IRGT #............................................20mA
•V
iso........................................................................ 2000V
• UL Recognized:Yellow Card No. E80276(N)
File No. E80271
✽1.Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial power frequency, sine full wave 360° conduction, Tc=71°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Ratings
16
160
106.5
5.0
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
2000
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class Unit
V
V
MAXIMUM RATINGS
12
600
720
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
Mar. 2002
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
✽4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=–8.0A/ms
3. Peak off-state voltage
VD=400V
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
Tj=125°C, VDRM applied
Tc=25°C, ITM=25A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ✽3
Tj=125°C
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
10
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
—
3.0
—
PERFORMANCE CURVES
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
10
0
23 5710
1
80
40
23 5710
2
44
120
160
200
60
20
100
140
180
0
4.40.4 1.2 2.4 3.20.8 1.6 2.0 2.8 3.6 4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
j
= 125°C
T
j
= 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
✽4
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
10
0
2310
1
5710
2
23 5710
3
23 5710
4
3
2
10
1
7
5
3
2
7
5
7
5
3
2
10
–1
V
GD
= 0.2V
P
GM
= 5W
P
G(AV)
= 0.5WV
GM
= 10V
V
GT
= 1.5V I
GM
= 2A
I
FGT I,
I
RGT I,
I
RGT III
2310
–1
5710
0
23 5710
1
23 5710
2
3.5
4.0
4.5
3.0
2.5
2.0
1.5
1.0
0.5
5.0
0
2310
2
5710
3
23
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
I
FGT I,
I
RGT I
I
RGT III
10
3
10
–1
10
3
10
4
10
2
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
23 57 23 57
10
2
10
5
23 57 23 57
40
30
15
10
5
35
25
20
0200 24 86 1012141618
TYPICAL EXAMPLE
TYPICAL EXAMPLE
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
NO FINS
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
14040–40–60 –20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
10
1
160
120
100
60
20
02016 180 2 6 10 14
40
80
140
4812
160
120
100
60
20
02018160 2 6 10 14
40
80
140
4812
160–40 0 40 80 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
160
120
100
60
20
03.20 0.4 1.2 2.0 2.8
40
80
140
0.8 1.6 2.4
60 60 t2.3
120 120 t2.3
100 100 t2.3
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS, CURVES
APPLY REGARDLESS OF
CONDUCTION ANGLE RESISTIVE,
INDUCTIVE LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
T2
+
, G
–
TYPICAL
EXAMPLE
T2
+
, G
+
T2
–
, G
–
TYPICAL
EXAMPLE
DISTRIBUTION
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
IRGT III
IRGT I
IFGT I
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
10
1
2310
0
5710
1
23 5710
2
23
7
5
5
3
2
7
7
3
2
10
0
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/
µ
s)
BREAKOVER VOLTAGE (dv/dt = 1V/
µ
s)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
Tj = 125°C
I QUADRANT
III QUADRANT
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
6Ω6Ω
6Ω
6V 6V
6V
RGRG
RG
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
Mar. 2002
OUTLINE DRAWING
Dimensions
in mm
TO-220F
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
2.54
13.5 MIN3.6 5.0
1.2
8.5
10.5 MAX
5.2
4.5
231
2
1
3
1
2
3
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
17
2.54
2.8
0.5 2.6
∗ Measurement point of
case temperature
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Contactless AC switches, light dimmer, electric flasher unit, hair drier, control of household equipment
such as TV sets · refrigerator · washing machine · electric fan,
other general purpose control applications
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
BCR16PM
•IT (RMS) ......................................................................16A
•VDRM ....................................................................... 600V
•IFGT !, IRGT !, IRGT #............................................20mA
•Viso........................................................................ 2000V
•UL Recognized:Yellow Card No. E80276(N)
File No. E80271
✽1.Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial power frequency, sine full wave 360° conduction, Tc=96°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Ratings
16
160
106.5
5.0
0.5
10
2
–40 ~ +150
–40 ~ +150
2.0
2000
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class Unit
V
V
MAXIMUM RATINGS
12
600
720
The product guaranteed maximum junction
temperature 150°C (See warning.)
Mar. 2002
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
✽4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj=125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c=–8.0A/ms
3. Peak off-state voltage
VD=400V
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
Tj=150°C, VDRM applied
Tc=25°C, ITM=25A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C/150°C, VD=1/2VDRM
Junction to case ✽3
Tj=125°C/150°C
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
—
3.0
—
PERFORMANCE CURVES
The product guaranteed maximum junction
temperature 150°C (See warning.)
10023 5710
1
80
40
23 5710
2
44
120
160
200
60
20
100
140
180
0
0.5 1.0 3.01.5 2.0 2.5 3.5 4.0
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
Tj = 150°C
Tj = 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
✽4
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
2310
–1
5710
0
23 5710
1
23 5710
2
3.5
4.0
4.5
3.0
2.5
2.0
1.5
1.0
0.5
5.0
0
2310
2
5710
3
23
10
3
10
–1
10
3
10
4
10
2
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
23 57 23 57
10
2
10
5
23 57 23 57
40
30
15
10
5
35
25
20
0200 24 86 1012141618
10
0
2310
1
5710
2
23 5710
3
23 5710
4
3
2
10
1
7
5
3
2
7
5
7
5
3
2
10
–1
V
GD
= 0.1V
P
GM
= 5W
P
G(AV)
= 0.5WV
GM
= 10V
V
GT
= 1.5V I
GM
= 2A
I
FGT I,
I
RGT I,
I
RGT III
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140160
4
4
–40 0 40 80 120
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140160
4
4
–40 0 40 80 120
I
FGT I,
I
RGT I
I
RGT III
TYPICAL EXAMPLE
TYPICAL EXAMPLE
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
NO FINS
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
40
12108
160
120
100
60
20
0200
80
140
24614
16 18
14016040–40–60 –20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
5
3
2
10
2
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140160
4
4
–40 0 40 80 120
10
1
160–40 0 40 80 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
40
12108
160
120
100
60
20
0200
80
140
24614
16 18
60 60 t2.3
120 120 t2.3
100 100 t2.3
160
120
100
60
20
04.02.00 1.0 1.5 2.5 3.0 3.5
40
80
140
0.5
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
CURVES APPLY
REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS, CURVES
APPLY REGARDLESS OF
CONDUCTION
ANGLE RESISTIVE,
INDUCTIVE LOADS
T2
+
, G
–
TYPICAL
EXAMPLE
T2
+
, G
+
T2
–
, G
–
TYPICAL
EXAMPLE
DISTRIBUTION
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
10
1
7
5
3
2
10
0
23 5710
1
10
2
10
3
7
5
3
2
23 5710
2
4
4
44
IRGT III
IRGT I
IFGT I
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160 10
2
35710
1
23235710
2
7
5
10
1
7
3
2
7
5
10
0
3
2
10
2
35710
1
23235710
2
7
5
10
1
7
3
2
7
5
10
0
3
2
160
100
80
40
20
0
14040–40–60 160–20 0 20 60 80
140
100120
60
120
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
TYPICAL EXAMPLE
Tj = 125°C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
TYPICAL EXAMPLE
Tj = 150°C
I QUADRANT
III QUADRANT
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
COMMUTATION CHARACTERISTICS
(Tj = 150°C)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
C1
C1 = 0.1~0.47µF
R1 = 47~100ΩC0 = 0.1µF
R0 = 100Ω
C0R0
R1
6Ω6Ω
6Ω
6V 6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
LOAD
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS