Agilent ABA-52563
3.5 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Description
Agilent’s ABA-52563 is an
economical, easy-to-use, inter-
nally 50-ohm matched silicon
monolithic amplifier that offers
excellent gain and flat broadband
response from DC to 3.5 GHz.
Packaged in an ultraminiature
industry-standard SOT-363
package, it requires half the board
space of a SOT-143 package.
At 2 GHz, the ABA-52563 offers a
small-signal gain of 21.5 dB,
output P1dB of 9.8 dBm and
19.9 dBm output third order
intercept point. It is suitable for
use as buffer amplifiers for
wideband applications. They are
designed for low cost gain blocks
in cellular applications, DBS
tuners, LNB and other wireless
communications systems.
ABA-52563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a double-
diffused single polysilicon
process with self-aligned submi-
cron emitter geometry. The
process is capable of simulta-
neous high fT and high NPN
breakdown (25 GHz fT at 6V
BVCEO). The process utilizes
industry standard device oxide
isolation technologies and
submicron aluminum multilayer
interconnect to achieve superior
performance, high uniformity,
and proven reliability.
Features
• Operating frequency: DC ~ 3.5 GHz
• 21.5 dB gain
• VSWR < 2.0 throughout operating
frequency
• 9.8 dBm output P1dB
• 3.3 dB noise figure
• Unconditionally stable
• Single 5V supply (Id = 35 mA)
• Lead-free option available
Applications
• Amplifier for cellular, cordless,
special mobile radio, PCS, ISM,
wireless LAN, DBS, TVRO, and TV
tuner applications
Surface Mount Package
SOT-363/SC70
Pin Connections and
Package Marking
Simplified Schematic
Note:
Top View. Package marking provides orientation
and identification. “x” is character to identify
date code.
Vcc
GND 3
2Hx
Input
GND 2
GND 1 Outpu
t
& Vcc
Vcc
Ground 2
Ground 1
Ground 3
RF
Input
RF
Output
& Vcc
2
ABA-52563 Absolute Maximum Ratings[1]
Symbol Parameter Units Absolute Max.
Vcc Device Voltage, RF output to ground (T = 25°C) V +7
Pin CW RF Input Power (Vcc = 5V) dBm +20
Pdiss Total Power Dissipation[3] W 0.4
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 3.5 mW/°C for Tb > 109°C.
Electrical Specifications
Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise.
Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev.
Gp[1] Power Gain (|S21|2) dB 20 21.5 0.2
∆Gp Power Gain Flatness, f = 0.1 ~ 2.5 GHz dB 0.5
f = 0.1 ~ 3.5 GHz 2.1
NF[1] Noise Figure dB 3.3 4 0.12
P1dB[1] Output Power at 1dB Gain Compression dBm 9.8 0.15
OIP3[1] Output Third Order Intercept Point dBm 19.9 0.18
VSWRin[1] Input VSWR 1.2
VSWRout[1] Output VSWR 1.4
Icc[1] Device Current mA 35 43 0.5
td[1] Group Delay ps 150
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Figure 1. ABA-52563 Production Test Circuit.
RF Outpu
t
RF Input Vcc
RFC
C
block
C
block
C
bypass
2Hx
Thermal Resistance[2] (Vcc = 5V):
θjc = 106°C/W
3
ABA-52563 Typical Performance
Tc = +25°C, Zo = 50Ω, Vcc = 5V unless stated otherwise.
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
Figure 5. Noise Figure vs. Frequency and
Temperature.
Figure 4. Noise Figure vs. Frequency and
Voltage.
Figure 3. Gain vs. Frequency and Temperature.
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
GAIN (dB)
0
23
22
21
20
19
18
17
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
GAIN (dB)
0
23
22
21
20
19
18
17
41
0.5 2 2.5 31.5 3.5
-40°C
+25°C
+85°C
FREQUENCY (GHz)
NF (dB)
0
4.5
4
3.5
3
2.5
2
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
NF (dB)
0
6
5
4
3
2
1
41
0.5 2 2.5 31.5 3.5
-40°C
+25°C
+85°C
FREQUENCY (GHz)
P1dB (dBm)
0
14
12
10
8
6
4
2
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
P1dB (dBm)
0
16
12
8
4
0
41
0.5 2 2.5 31.5 3.5
-40°C
+25°C
+85°C
4
Figure 10. Input and Output VSWR vs.
Frequency.
FREQUENCY (GHz)
VSWR
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
6
13425
VSWR IN
VWSR OUT
Figure 11. Supply Current vs. Voltage and
Temperature.
Icc (mA)
70
60
50
40
30
20
10
0
-40°C
+25°C
+85°C
VOLTAGE (V)
02
145637
ABA-52563 Typical Performance, continued
Tc = +25°C, Zo = 50Ω, Vcc = 5V unless stated otherwise.
Figure 9. Output IP3 vs. Frequency and
Temperature.
Figure 8. Output IP3 vs. Frequency and
Voltage.
FREQUENCY (GHz)
OIP3 (dBm)
0
40
35
30
25
20
15
10
5
0
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
OIP3 (dBm)
0
35
30
25
20
15
10
5
0
41
0.5 2 2.5 31.5 3.5
-40°C
+25°C
+85°C
5
ABA-52563 Typical Scattering Parameters
TC = +25°C, VCC = 5V, ZO = 50 Ω, unless stated otherwise
Freq S11 S11 S21 S21 S21 S12 S12 S12 S22 S22 K
(GHz) Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. Factor
0.05 0.01 146.6 21.7 12.10 -2.6 -30.2 0.03 0.3 0.15 -2.4 1.492
0.10 0.00 134.0 21.7 12.11 -4.8 -30.5 0.03 -0.3 0.15 -5.1 1.528
0.20 0.00 -40.6 21.7 12.16 -9.6 -30.5 0.03 0.1 0.15 -9.6 1.523
0.30 0.01 -53.2 21.7 12.19 -14.5 -30.8 0.03 1.2 0.15 -13.0 1.560
0.40 0.02 -56.7 21.7 12.19 -19.5 -30.8 0.03 2.4 0.14 -15.7 1.560
0.50 0.03 -141.5 21.8 12.26 -24.8 -30.5 0.03 1.0 0.15 -15.7 1.516
0.60 0.03 -128.1 21.8 12.24 -29.8 -30.8 0.03 3.1 0.15 -17.6 1.557
0.70 0.04 -127.5 21.7 12.21 -34.9 -30.5 0.03 4.3 0.15 -20.3 1.520
0.80 0.04 -126.7 21.7 12.18 -39.8 -30.5 0.03 6.1 0.15 -22.5 1.523
0.90 0.05 -123.9 21.7 12.16 -44.7 -30.8 0.03 7.4 0.15 -24.2 1.563
1.00 0.05 -125.0 21.7 12.13 -49.7 -30.8 0.03 11.7 0.15 -26.4 1.566
1.20 0.05 -123.4 21.7 12.10 -59.6 -30.2 0.03 10.8 0.15 -29.4 1.490
1.40 0.06 -127.4 21.6 12.05 -69.4 -30.2 0.03 12.4 0.15 -32.4 1.491
1.60 0.06 -133.8 21.6 12.04 -79.6 -29.6 0.03 13.0 0.15 -35.3 1.424
1.80 0.06 -136.7 21.6 12.00 -89.8 -29.1 0.04 14.7 0.15 -37.8 1.370
2.00 0.07 -142.5 21.5 11.94 -100.4 -29.4 0.03 14.3 0.15 -38.3 1.402
2.20 0.07 -143.9 21.5 11.87 -111.2 -28.6 0.04 16.7 0.15 -37.8 1.326
2.40 0.08 -146.1 21.4 11.75 -121.9 -28.4 0.04 16.2 0.15 -37.3 1.309
2.60 0.09 -148.4 21.3 11.56 -133.2 -28.0 0.04 17.3 0.14 -36.9 1.279
2.80 0.09 -149.5 21.1 11.33 -144.5 -27.7 0.04 15.6 0.14 -36.4 1.273
3.00 0.10 -152.7 20.8 10.95 -156.1 -27.3 0.04 15.8 0.13 -35.9 1.263
3.20 0.10 -158.7 20.4 10.51 -167.5 -27.1 0.04 15.6 0.13 -35.4 1.275
3.40 0.11 -163.2 20.0 9.97 -178.7 -27.3 0.04 15.5 0.13 -34.9 1.338
3.50 0.11 -167.6 19.7 9.67 175.9 -26.6 0.05 16.0 0.13 -34.6 1.285
4.00 0.12 165.9 18.3 8.25 150.6 -.26.2 0.05 12.0 0.13 -33.4 1.386
4.50 0.16 138.3 16.9 6.98 126.3 -25.5 0.05 12.7 0.14 -37.1 1.462
5.00 0.19 122.8 15.1 5.71 105.0 -24.7 0.06 9.5 0.12 -48.4 1.585
5.50 0.25 112.3 13.7 4.85 86.7 -23.5 0.07 6.0 0.12 -63.0 1.565
6.00 0.30 99.3 12.3 4.14 70.4 -23.1 0.07 1.0 0.11 -83.5 1.680
6
Device Models
Refer to Agilent’s web site
www.agilent.com/view/rf
Package Dimensions
Outline 63 (SOT-363/SC-70)
Recommended PCB Pad Layout for
Agilent's SC70 6L/SOT-363 Products
E
HE
D
e
A1
b
A
A2
Q1
L
c
DIMENSIONS (mm)
MIN.
1.15
1.80
1.80
0.80
0.80
0.00
0.10
0.15
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.30
0.20
0.30
SYMBOL
E
D
HE
A
A2
A1
Q1
e
b
c
L
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.
0.650 BCS
0.026
0.079
0.018
0.039
Dimensions in inches.
Ordering Information
Part Number Devices per Container Container
ABA-52563-TR1 3000 7" reel
ABA-52563-TR2 10000 13" reel
ABA-52563-BLK 100 antistatic bag
ABA-52563-TR1G 3000 7" reel
ABA-52563-TR2G 10000 13" reel
ABA-52563-BLKG 100 antistatic bag
Note: For lead-free option,the part number will have the character “G” at the end.
7
Device Orientation
Tape Dimensions and Product Orientation for Outline 63
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIE
W
8 mm
4 mm
TOP VIEW
(Package marking example orientation shown.)
2H 2H 2H 2H
P
P
0
P
2
F
W
C
D
1
D
E
A
0
10° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
10° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t
1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012
0.0100 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
T
t
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
COVER TAPE
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (65) 6756 2394
India, Australia, New Zealand: (65) 6755 1939
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand, Philippines,
Indonesia: (65) 6755 2044
Taiwan: (65) 6755 1843
Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0951EN
December 4, 2004
5989-1971EN
