PHOTOCOUPLER
PS2703-1
HIGH ISOLATION VOLTAGE
HIGH COLLECTOR TO EMITTER VOLTAGE TYPE
SOP MULTI PHOTOCOUPLER −NEPOC Series−
DESCRIPTION
The PS2703-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor.
This is mounted in a plastic SOP (Small Outline Package) for high density applications.
This package has shield effect to cut off ambient light.
FEATURES
• High isolation voltage (BV = 3 750 Vr.m.s.)
• High collector to emitter voltage (VCEO = 120 V)
• SOP (Small Outline Package) type
• Each isolated channel per package
• High-speed switching (tr, tf = 10
µ
s TYP.)
• Taping product number: PS2703-1-F3, F4
• Safety standards
• UL approved: File No. E72422
• BSI approved: File No. 8219/8220
• CSA approved: File No. CA 101391
• DIN EN60747-5-2 (VDE0884 Part2) approved (Option)
APPLICATIONS
• Hybrid IC
• Telephone/FAX
• FA/OA equipment
• Programmable logic controllers
• Power supply
The mark shows major revised points.
Document No. PN10242EJ02V0DS (2nd edition)
Date Published March 2006 CP(K)
©
NEC Compound Semiconductor Devices, Ltd. 1988, 2006
PS2703-1
PACKAGE DIMENSIONS (in millimeters)
PS2703-1
4.0±0.5
7.0±0.3
4.4
0.5±0.3
0.15+0.10
–0.05
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
43
12
2.0
0.1±0.1
2.1.±0.2
2.54
0.4+0.10
–0.05 0.25 M
MARKING EXAMPLE
2703
M601
Trade Mark
Type Number
Assembly Lot
No. 1 pin Mark
M601
Week Assembled
Year Assembled
(Last 1 Digit)
CTR Rank Name
*1 Bar : Pb-Free
Remark "PS" and "-1" are omitted from original type number
*1
Data Sheet PN10242EJ02V0DS
2
PS2703-1
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification Packing Style Safety Standard
Approval Application Part
Number*1
PS2703-1 PS2703-1-A Pb-Free Magazine case 100 pcs Standard products PS2703-1
PS2703-1-F3 PS2703-1-F3-A Embossed Tape 3 500 pcs/reel (UL, BSI, CSA
PS2703-1-F4 PS2703-1-F4-A approved)
PS2703-1-V PS2703-1-V-A Magazine case 100 pcs DIN EN60747-5-2
PS2703-1-V-F3 PS2703-1-V-F3-A Embossed Tape 3 500 pcs/reel (VDE0884 Part2)
PS2703-1-V-F4 PS2703-1-V-F4-A Approved (Option)
*1 For the application of the Safety Standard, following part number should be used.
Data Sheet PN10242EJ02V0DS 3
PS2703-1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF 50 mA
Reverse Voltage VR 6 V
Power Dissipation Derating
∆
PD/°C 0.8 mW/°C
Power Dissipation PD 80 mW
Peak Forward Current*1 IFP 1 A
Transistor Collector to Emitter Voltage VCEO 120 V
Emitter to Collector Voltage VECO 6 V
Collector Current IC 30 mA
Power Dissipation Derating
∆
PC/°C 1.5 mW/°C
Power Dissipation PC 150 mW
Isolation Voltage*2 BV 3 750 Vr.m.s.
Operating Ambient Temperature TA –55 to +100 °C
Storage Temperature Tstg –55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output
Pins 1-2 shorted together, 3-4 shorted together.
Data Sheet PN10242EJ02V0DS
4
PS2703-1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 5 mA 1.1 1.4 V
Reverse Current IR VR = 5 V 5
µ
A
Terminal Capacitance Ct V = 0 V, f = 1 MHz 30 pF
Transistor Collector to Emitter Dark
Current ICEO IF = 0 mA, VCE = 120 V 100 nA
Coupled Current Transfer Ratio CTR IF = 5 mA, VCE = 5 V 50 150 400 %
(IC/IF)*1 IF = 1 mA, VCE = 5 V 10 80
Collector Saturation
Voltage VCE (sat) IF = 10 mA, IC = 2 mA 0.3 V
Isolation Resistance RI-O VI-O = 1 kVDC 1011
Ω
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Rise Time *2 tr VCC = 5 V, IC = 2 mA, RL = 1 kΩ 10
µ
s
Fall Time *2 tf 10
*1 CTR rank
CTR rank CTR (%) Conditions
K 200 to 400 IF = 5 mA, VCE = 5 V
80 to IF = 1 mA, VCE = 5 V
L 100 to 300 IF = 5 mA, VCE = 5 V
25 to IF = 1 mA, VCE = 5 V
M 50 to 150 IF = 5 mA, VCE = 5 V
10 to IF = 1 mA, VCE = 5 V
*2 Test circuit for switching time
PW = 100 s
Duty Cycle = 1/10
µ
Pulse Input V
CC
V
OUT
R
L
= 1 kΩ
50 Ω
I
F
In monitor
Data Sheet PN10242EJ02V0DS 5
PS2703-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
100
50
25
0
75
25 50 75 100
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE 200
150
100
50
025 50 75 100
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.5 mW/˚C
10
0.1
0.5
5
1
0.2 0.6 1.00.0 0.4 0.8
Collector Saturation Voltage V
CE (sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
I
F
= 25 mA
1.5 mA
1 mA
0.5 mA
10 mA
5 mA
2.5 mA
2 mA
10
4
0
8
6
2
6124 8
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
I
F
= 10 mA
4 mA
2 mA
3 mA
1 mA
5 mA
0.5 mA
100
0.1
1
0.01
10
0.6 1.0 1.4 1.60.8 1.2
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
50 000
0.1
500
5 000
10
10 000
1 000
100
50
5
1
0.5
–60 0 40 80–40 –20 20 60 100
Ambient Temperature T
A
(˚C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
V
CE
= 40 V
24 V
10 V
Remark The graphs indicate nominal characteristics.
Data Sheet PN10242EJ02V0DS
6
PS2703-1
300
250
150
50
0
200
100
0.1 0.5 5 50
110
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
V
CE
= 5 V
V
CC
= 5V,
I
C
= 2 mA
100
0.1
10
1
10 1 k 10 k
100
Load Resistance R
L
(Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
t
d
t
f
t
r
t
s
1.2
0.4
0.0
1.0
0.6
0.2
0.8
500
1100.5 50 1005
Frequency f (kHz)
Normalized Gain G
V
FREQUENCY RESPONSE
R
L
= 1 kΩ
510 Ω
300 Ω
100 Ω
I
F
= 5 mA, V
CC
= 5 V,
CTR = 90 %
1 000
100
10
1
0.1 1 10 100
Load Resistance R
L
(kΩ)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
t
f
t
s
t
r
t
d
1.2
1.0
0.0
0.4
0.2
0.8
0.6
10
2
10
3
110
4
10
5
10
6
Time (Hr)
LONG TIME CTR DEGRADATION
CTR Dgradation (Relative Value)
I
F
= 1 mA, T
A
= 25 ˚C
I
F
= 5 mA, T
A
= 25 ˚C
I
F
= 20 mA, T
A
= 25 ˚C
I
F
= 20 mA, T
A
= 60 ˚C
1.2
0.6
0.0
0.8
1.0
0.4
0.2
025
50 100–55 –25 75
Ambient Temperature T
A
(˚C)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 5 mA, V
CE
= 5 V
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
Remark The graphs indicate nominal characteristics.
Data Sheet PN10242EJ02V0DS 7
PS2703-1
TAPING SPECIFICATIONS (in millimeters)
Tape Direction
Outline and Dimensions (Reel)
Packing: 3 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
11.9 to 15.4
Outer edge of
flange
17.5±1.0
13.5±1.0
13.0±0.2
φ
PS2703-1-F3 PS2703-1-F4
1.55±0.1
2.0±0.05
4.0±0.1
1.75±0.1
4.6±0.1
2.9 MAX.
0.3
8.0±0.1
Outline and Dimensions (Tape)
2.4±0.1
1.5
+0.1
–0
7.4±0.1
5.5±0.05
12.0±0.2
Data Sheet PN10242EJ02V0DS
8
PS2703-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220˚C
180˚C
Package Surface Temperature T (˚C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260˚C MAX.
120˚C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature) 350°C or below
• Time (each pins) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
Data Sheet PN10242EJ02V0DS 9
PS2703-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10242EJ02V0DS
10
PS2703-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Symbol Speck Unit
Application classification (DIN VDE 0109)
for rated line voltages ≤ 300 Vr.m.s. IV
for rated line voltages ≤ 600 Vr.m.s. III
Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21
Dielectric strength maximum operating isolation voltage.
Test voltage (partial discharge test procedure a for type test and random test) UIORM 710 Vpeak
Upr = 1.2 × UIORM, Pd < 5 pC Upr 850 Vpeak
Test voltage (partial discharge test procedure b for all devices test)
Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 140 Vpeak
Highest permissible overvoltage UTR 6 000 Vpeak
Degree of pollution (DIN VDE 0109) 2
Clearance distance > 5 mm
Creepage distance > 5 mm
Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175
Material group (DIN VDE 0109) III a
Storage temperature range Tstg –55 to +150 °C
Operating temperature range TA –55 to +100 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C Ris MIN. 1012 Ω
VIO = 500 V dc at TA MAX. at least 100 °C Ris MIN. 1011 Ω
Safety maximum ratings
(maximum permissible in case of fault, see thermal derating curve)
Package temperature Tsi 150 °C
Current (input current IF, Psi = 0) Isi 200 mA
Power (output or total power dissipation) Psi 300 mW
Isolation resistance
VIO = 500 V dc at TA = 175 °C (Tsi) Ris MIN. 109Ω
Data Sheet PN10242EJ02V0DS 11
PS2703-1
When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
M8E 00. 4 - 0110
The information in this document is current as of March, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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Customers must check the quality grade of each semiconductor product before using it in a particular
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
Data Sheet PN10242EJ02V0DS
12
PS2703-1
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
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For further information, please contact
