N-C hannel Logic Level E nhancement Mode F ield E ffect T ransistor
ABS OLUT E MAXIMUM R ATING S (TC =25 C unless otherwise noted)
THE R MAL C HAR AC T E R IS T IC S
Thermal R esistance, J unction-to-C ase
Thermal R esistance, J unction-to-Ambient
R J C
R J A
2
62.5
/W
C
/W
C
30
P arameter S ymbol Limit Unit
Drain-S ource Voltage VDS V
G ate-S ource Voltage VG S 20 V
-P ulsed
ID70 A
IDM 210 A
Drain-S ource Diode F orward C urrent IS75 A
Maximum P ower Diss ipation PDW
Operating and S torage Temperature R ange TJ, TS TG -65 to 175 C
@ Tc=25 C 75
Drain C urrent-C ontinuous @ TJ =125 C
a
S
G
D
S DB S E R IE S
T O-263(DD-P AK )
GS
D
S DP S E R IE S
TO-220
S
D
G
4
1
PR ODUC T S UMMAR Y
VDS S IDRDS (on) ( m
W
) Max
30V 70A
7 @ VG S = 10V
11 @ VG S = 4.5V
SDP/B75N03L
F E AT UR E S
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
S amHop Microelectronics C orp. May,2004 ver1.1
S DP /B 75N03L
E LE C T R IC AL C HAR AC T E R IS T IC S (T C 25 C unles s otherwis e noted)
=
P arameter S ymbol C ondition Min Typ Max Unit
OF F C HAR AC T E R IS TIC S
Drain-S ource B reakdown Voltage B V DS S =
VG S 0V, ID 250uA
=30 V
Zero G ate Voltage Drain C urrent IDS S VDS 24V, V G S 0V
= = 10 uA
G ate-B ody Leakage IG S S VGS 16V, VDS 0V
==nA
ON C HAR AC T E R IS TIC S a
G ate T hreshold Voltage VG S (th) VDS VG S , ID = 250uA
=1 1.5 3 V
Drain-S ource On-S tate R esistance RDS (ON) VG S = 10V, ID = 37A 7
VG S = 4.5V, ID = 30A 11
On-S tate Drain C urrent ID(ON) VG S = 10V, VDS = 10V
60
47
A
SF orward Transconductance F S
gVDS = 10V, ID = 37A
DY NAMIC C HAR AC T E R IS TIC S b
Input C apacitance CIS S
CR S S
COS S
Output C apacitance
R everse Transfer C apacitance
VDS =15V, VG S = 0V
f =1.0MHZ
1900 PF
PF
PF
320
S WIT C HING C HAR AC T E R IS T IC S b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OF F )
tf
F all T ime
VDD = 15V,
ID =1A,
VG E N = 10V
RG =1.8
15 ns
ns
ns
ns
6.5
Total G ate C harge
G ate-S ource C harge
G ate-Drain C harge
Qg
Qgs
Qgd
VDS =24V, ID = 75A,
VG S =10V
61 nC
nC
nC
11
2
4
35
960
RL =0.20
11
12.5
5.5
6
9
m ohm
m ohm
ohm
ohm
100
nC
VDS =24V,ID =75A,VG S =10V
VDS =24V,ID =75A,VG S =4.5V 32
SDP/B75N03L
P arameter S ymbol C ondition Min Typ Max Unit
E LE C T R IC AL C HAR AC T E R IS T IC S (T
C=25 C unles s otherwis e noted)
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
Diode F orward Voltage V
S D VG S = 0V, Is =37A 0.93 1.3 V
a
Notes
b.G uaranteed by design, not subject to production testing.
a.P ulse Tes t:P ulse Width 300us, Duty C ycle 2%.
6000
5000
4000
3000
2000
1000
0
0 5 10 15 20 25 30
3
F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics
F igure 3. C apacitance
VDS , Drain-to S ource Voltage (V )
VG S , G ate-to-S ource Voltage (V)
VDS , Drain-to-S ource Voltage (V)
ID, Drain C urrent(A)
C , C apacitance (pF )
ID, Drain C urrent (A)
4
VG S =10,9,8,7,6,5,4V
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6
VG S =3V
C iss
C os s
C rs s
20
15
10
5
0
1 2 3 4 5 6
25
25 C
TJ=125 C
-55 C
0
2.2
1.8
1.4
1.0
0.6
0.2
0
-50 0 50 100 125
Tj( C )
-25 25 75
V
G S
=10V
I
D
=37A
F igure 4. On-R esistance Variation with
Temperature
Drain-S ource On-R es istance
RDS (O N), Normalized
S DP /B 75N03L
with T emperature
F igure 6. B reakdown Voltage Variation
with T emperature
Vth, Normalized
G ate-S ource T hres hold Voltage
gF S , Trans conductance (S )
VG S , G ate to S ource Voltage (V )
B V DS S , Normalized
Drain-S ource Breakdown Voltage
Is, S ource-drain current (A)
F igure 7. Transconductance V ariation
with Drain C urrent
IDS , Drain-S ource C urrent (A)
F igure 9. G ate C harge
Qg, Total G ate C harge (nC )
F igure 10. Maximum S afe
Operating Area
VDS , Drain-S ource Voltage (V )
F igure 8. B ody Diode F orward Voltage
Variation with S ource C urrent
VS D, B ody Diode F orward Voltage (V )
Tj, J unction Temperature ( C ) Tj, J unction Temperature ( C )
ID, Drain C urrent (A)
4
4
F igure 5. G ate T hres hold V ariation
50
10
1
0.1
0.4 0.6 0.8 1.0 1.2 1.4
50
40
30
20
10
0
0 10 20 30 40
VDS =10V
10
8
6
4
2
0
0 8 16 24 32 40 48 56 64
V
DS
=10V
I
D
=75A
200
300
100
10
1
0.5
0.1 1 10 30 60
V
G S
=20V
S ingle P uls e
Tc=25 C
R
DS
(ON)Limit
DC
1s
100ms
10ms
1ms
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125
VDS =VG S
ID=250uA
-50 -25 0 25 50 75 100 125
1.15
1.10
1.05
1.00
0.95
0.90
0.85
ID=250uA
F igure 11. S witching Tes t C ircuit F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
td(off)
90%
10% 10%
50% 50%
90%
toff
tf
90%
P ULS E WIDTH
5
4
SDP/B75N03L
INVE R TE D
T ransient T hermal Impedance
2
1
0.1
0.01
0.01 0.1 1 10 100 1000 10000
PDM
t1
t2
S quare Wave P ulse Duration (ms ec)
F igure 13. Normalized Thermal Transient Impedance C urve
1. R θJ C (t)=r (t) * R θJ C
2. R θJ C =S ee Datasheet
3. T J M-TC = P * R θJ C (t)
4. Duty C ycle, D=t1/t2
r(t),Normalized E ffective
D=0.5
0.2
0.1
0.05
0.02
0.01
S ingle Pulse
VDD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
6
S DP/B75N03L
