mESD3.3DT5G SERIES ESD Protection Diodes Ultra Small SOT-723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many other portable applications. Specification Features: * Small Body Outline Dimensions: * * * * * * * * * 0.047 x 0.032 (1.20 mm x 0.80 mm) Low Body Height: 0.020 (0.5 mm) Stand-off Voltage: 3.3 V - 6.0 V Low Leakage Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000-4-2 Level 4 ESD Protection IEC61000-4-4 Level 4 EFT Protection AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices www.onsemi.com PIN 1. CATHODE 2. CATHODE 3. ANODE 1 3 2 MARKING DIAGRAM 3 1 2 SOT-723 CASE 631AA STYLE 4 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic xx M xx M = Device Code = Date Code ORDERING INFORMATION Epoxy Meets UL 94 V-0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any Device Package Shipping SOT-723 8000/Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: 260C UESDxxDT5G Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAXIMUM RATINGS Rating Value Unit 30 30 kV IEC 61000-4-4 (EFT) 40 A ESD Voltage 16 400 kV V 240 1.9 525 mW mW/C C/W IEC 61000-4-2 (ESD) Symbol Air Contact Per Human Body Model Per Machine Model Total Power Dissipation on FR-5 Board (Note 1) @ TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient RqJA Junction and Storage Temperature Range TJ, Tstg -55 to +150 C TL 260 C Lead Solder Temperature - Maximum (10 Second Duration) PD DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR-5 = 1.0 x 0.75 x 0.62 in. (c) Semiconductor Components Industries, LLC, 2013 October, 2017 - Rev. 5 1 Publication Order Number: UESD3.3DT5G/D mESD3.3DT5G SERIES ELECTRICAL CHARACTERISTICS I (TA = 25C unless otherwise noted) IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR Working Peak Reverse Voltage VC VBR VRWM Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C IF Parameter Symbol V IR VF IT IPP Max. Capacitance @VR = 0 and f = 1 MHz Uni-Directional ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types) Device Marking VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT C (pF) Max Max Min mA Typ UESD3.3DT5G L0 3.3 1.0 5.0 1.0 47 UESD5.0DT5G L2 5.0 0.1 6.2 1.0 38 UESD6.0DT5G L3 6.0 0.1 7.0 1.0 34 Device* *Other voltages available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25C. www.onsemi.com 2 mESD3.3DT5G SERIES 7.4 20 7.3 18 7.2 16 7.1 14 mESDxxDT5G 7.0 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ) TYPICAL CHARACTERISTICS 6.9 6.8 6.7 12 10 8 6.6 6 6.5 4 mESDxxDT5G 6.4 2 6.3 -55 0 -55 + 150 + 25 TEMPERATURE (C) Figure 1. Typical Breakdown Voltage versus Temperature Figure 2. Typical Leakage Current versus Temperature 300 PD, POWER DISSIPATION (mW) 45 40 CAPACITANCE (pF) + 150 + 25 TEMPERATURE (C) 35 30 mESDxxDT5G 25 20 15 10 5 0 0 1 2 3 4 250 200 150 100 0 5 FR-5 BOARD 50 0 BIAS VOLTAGE (V) Figure 3. Typical Capacitance versus Bias Voltage 25 50 75 100 125 TEMPERATURE (C) 150 175 Figure 4. Steady State Power Derating Curve Figure 5. Positive 8 kV contact per IEC 6100-4-2 - mESD5.0DT5G Figure 6. Negative 8 kV contact per IEC 61000-4-2 - mESD5.0DT5G www.onsemi.com 3 mESD3.3DT5G SERIES PACKAGE DIMENSIONS SOT-723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. -X- D b1 A -Y- 3 E 1 2X HE 2 2X e b C 0.08 X Y SIDE VIEW TOP VIEW 3X 1 3X DIM A b b1 C D E e HE L L2 L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE L2 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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