2SJ479(L), 2SJ479(S) Silicon P Channel DV-L MOS FET REJ03G0866-0200 (Previous: ADE-208-541) Rev.2.00 Sep 07, 2005 Description High speed power switching Features * Low on-resistance RDS (on) = 25 m typ. * 4 V gate drive devices. * High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) D 4 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 2 3 3 S Rev.2.00 Sep 07, 2005 page 1 of 7 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol VDSS Value -30 Unit V VGSS ID 20 -30 V A -120 -30 A A 50 150 W C -55 to +150 C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel temperature Pch Tch Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Tstg Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min -30 Typ -- Max -- Unit V Gate to source breakdown voltage Zero gate voltage drain current V (BR) GSS IDSS 20 -- -- -- -- -10 V A IG = 100 A, VDS = 0 VDS = -30 V, VGS = 0 IGSS VGS (off) -- -1.0 -- -- 10 -2.0 A V VGS = 16 V, VDS = 0 ID = -1 mA, VDS = -10 V RDS (on) RDS (on) -- -- 25 40 35 60 m m ID = -15 A, VGS = -10 V Note 3 ID = -15 A, VGS = -4 V Forward transfer admittance Input capacitance |yfs| Ciss 12 -- 20 1700 -- -- S pF Output capacitance Reverse transfer capacitance Coss Crss -- -- 950 260 -- -- pF pF ID = -15 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz Turn-on delay time Rise time td (on) tr -- -- 20 290 -- -- ns ns Turn-off delay time Fall time td (off) tf -- -- 170 130 -- -- ns ns Body to drain diode forward voltage Body to drain diode reverse recovery time VDF trr -- -- -1.1 70 -- -- V ns Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 7 Test Conditions ID = -10 mA, VGS = 0 Note 3 VGS = -10 V ID = -15 A RL = 0.67 IF = -30 A, VGS = 0 IF = -30 A, VGS = 0 diF/dt = 50 A/s Note 3 2SJ479(L), 2SJ479(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating -500 -300 ID (A) 10 s -100 PW 50 25 -10 Operation in this area is limited by RDS (on) -3 -1 0 0 50 100 150 Case Temperature Ta = 25C -0.5 -0.1 -0.3 -1 200 Tc (C) -3 -10 Drain to Source Voltage Typical Output Characteristics -50 = Drain Current -30 DC Channel Dissipation 75 ) ) s ot C 0 sh s 25 1 10 m s( c= 1 m (T n 10 tio ra pe O Pch (W) 100 -30 -100 VDS (V) Typical Transfer Characteristics -10 V -6 V -50 Tc = -25C -5 V -4.5 V -4 V -40 ID (A) ID (A) Pulse Test -3.5 V 25C 75C -30 -3 V -20 VGS = -2.5 V -10 Drain Current -30 Drain Current -40 -20 -10 VDS = -10 V Pulse Test 0 0 -2 -4 -6 Drain to Source Saturation Voltage vs. Gate to Source Voltage -1.0 Pulse Test -0.8 -0.6 ID = -20 A -0.4 -10 A -0.2 -5 A 0 0 -4 -8 -12 Gate to Source Voltage Rev.2.00 Sep 07, 2005 page 3 of 7 -16 -20 VGS (V) 0 -1 -2 -3 -4 Gate to Source Voltage VDS (V) -5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Voltage 0 -10 -8 0.5 Pulse Test 0.2 0.1 VGS = -4 V 0.05 0.02 0.01 -1 -10 V -2 -5 -10 Drain Current -20 ID (A) -50 2SJ479(L), 2SJ479(S) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 ID = -20 A 0.06 VGS = -4 V -5 A, -10 A 0.04 -5 A, -10 A, -20 A 0.02 -10 V 0 -40 0 40 80 Case Temperature 120 160 50 20 Tc = -25C 10 25C 5 75C 2 1 0.5 VDS = -10 V Pulse Test 0.2 0.1 -0.1 -0.2 -0.5 -1 -2 Tc (C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 1000 10000 500 5000 Capacitance C (pF) Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time 200 100 50 20 di / dt = 50 A / s VGS = 0, Ta = 25C 10 5 -0.1 -0.2 -0.5 -1 -2 500 Crss 100 IDR (A) -8 -12 VDD = -25 V -10 V -5 V -16 -40 -50 0 16 32 Gate Charge Rev.2.00 Sep 07, 2005 page 4 of 7 48 64 Qg (nc) -20 80 VGS (V) -4 VGS VDS -30 ID = -30 A -4 -8 -12 -16 -20 1000 500 Switching Time t (ns) -20 0 Switching Characteristics Gate to Source Voltage VDS (V) Drain to Source Voltage -10 VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) 0 VDD = -5 V -10 V -25 V Coss 1000 Dynamic Input Characteristics 0 Ciss 2000 200 -5 -10 -20 -50 Reverse Drain Current -5 -10 -20 -50 td(off) 200 100 50 tf tr td(on) 20 10 VGS = -10 V, VDD = -10 V duty 1 % 5 -0.1 -0.2 -0.5 -1 -2 Drain Current -5 -10 -20 ID (A) -50 2SJ479(L), 2SJ479(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) -50 Pulse Test -40 -10 V -30 -5 V -20 VGS = 0, 5 V -10 0 -1.2 -1.6 Source to Drain Voltage VSD 0 -0.4 -0.8 -2.0 (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.03 0.05 ch - c (t) = s (t) * ch - c ch - c = 2.5C/W, Tc = 25C 0.02 PDM 0.0 1 tp ul s D= e PW T PW T o sh 1 0.01 10 100 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 90% 90% Vin 10 V 50 VDD = -10 V Vout td(on) Rev.2.00 Sep 07, 2005 page 5 of 7 10% tr 10% td(off) tf 2SJ479(L), 2SJ479(S) Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g 8.6 0.3 1.3 0.15 1.3 0.2 1.37 0.2 0.76 0.1 2.54 0.5 2.54 0.5 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 0.1 MASS[Typ.] Unit: mm 1.30g (1.5) 10.0 Rev.2.00 Sep 07, 2005 page 6 of 7 2.54 0.5 0.4 0.1 0.3 3.0 +- 0.5 2.54 0.5 0.2 0.86 +- 0.1 7.8 7.0 2.49 0.2 0.2 0.1 +- 0.1 1.37 0.2 1.3 0.2 7.8 6.6 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 1.7 SC-83 2.49 0.2 11.0 0.5 11.3 0.5 0.3 10.0 +- 0.5 (1.4) 4.44 0.2 10.2 0.3 0.2 0.86 +- 0.1 JEITA Package Code Unit: mm 2.2 2SJ479(L), 2SJ479(S) Ordering Information Part Name 2SJ479L-E 2SJ479STL-E Quantity 500 pcs 1000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0