Rev.5.00 Sep 07, 2005 page 1 of 7
2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET REJ03G0873-0500
(Previous: ADE-208- 5 48C)
Rev.5.00
Sep 07, 2005
Description
High speed power swit ching
Features
• Low on-resistance
RDS (on) = 0.065 Ω typ. (at VGS = –10 V, ID = –5 A)
• Low drive current
• High speed switching
• 4 V gate drive devices.
Outline
RENESAS Package code:
PRSS0004ZD-B
(Package name:
DPAK (L)-(2) )
RENESAS Package code:
PRSS0004ZD-C
(Package name:
DPAK (S) )
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
123
4
123
4
2SJ506(L), 2SJ506(S)
Rev.5.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS –30 V
Gate to source voltage VGSS ±20 V
Drain current ID –10 A
Drain peak current ID (pulse) Note 1 –40 A
Body to drain diode reverse drain current IDR –10 A
Channel dissipation Pch Note 2 20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS –30 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Gate to source cutoff volta ge VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V
RDS (on) — 65 85 mΩ I
D = –5 A, VGS = –10 V Note 3 Static drain to source on state resistance RDS (on) — 110 180 mΩ I
D = –5 A, VGS = –4 V Note 3
Forward transfer admittance |yfs| 10 16 — S ID = –5 A, VDS = –10 V Note 3
Input capacitan ce Ciss — 660 — pF
Output capacitance Coss — 440 — pF
Reverse transfer capacitance Crss — 140 — pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 12 — ns
Rise time tr — 65 — ns
Turn-off delay time td (off) — 85 — ns
Fall time tf — 65 — ns
VGS = –10 V
ID = –5 A
RL = 2 Ω
Body to drain diode forward voltage VDF — –1.05 — V IF = –10 A, VGS = 0
Body to drain diode reverse recovery time trr — 65 — ns IF = –10 A, VGS = 0
diF/dt = 50 A/µs
Note: 3. Pulse test
2SJ506(L), 2SJ506(S)
Rev.5.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
–20
0
–4
–8
–12
–16
0 –4 –8 –12 –16 –20
–20
0
–4
–8
–12
–16
0 –1–2–3–4–5
Tc = –25°C
40
0
10
20
30
0 50 100 150 200
V
DS
= –10 V
Pulse Test
–10 V
–5 V
–4 V
–8 V
–6 V
–3 V
–4.5 V
–3.5 V
V
GS
= –2.5 V
Pulse Test
Drain to Source Voltage VDS (V)
Drain Current I
D
(A)
Maximum Safe Operation Area
–200
–20
–50
–100
–0.2
–0.5
–10
–2
–5
–1
–0.1
–0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50
–500
Ta = 25°C
PW = 10 ms (1 shot)
DC Operation (Tc = 25°C)
1 ms
10 µs
100 µs
Operation in
this area is
limited by R
DS (on)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
0
–0.4
–0.8
–1.2
–1.6
0 –4 –8 –12 –16 –20
Pulse Test
I
D
= –10 A
–5 A
–2 A
Drain Current ID (A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
200
100
20
50
10
–2 –20 –50–1 –10–5 –100
1000
500
V
GS
= –4 V
–10 V
Pulse Test
75°C
25°C
2SJ506(L), 2SJ506(S)
Rev.5.00 Sep 07, 2005 page 4 of 7
200
–40 0 40 80 120 160
Case Temperature Tc (°C)
0
40
80
120
160
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test I
D
= –10 A
I
D
= –10 A
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
Drain Current I
D
(A)
100
50
10
20
1
2
5
0.5
–0.1 –0.2 –0.5 –2–1 –5 –20–10 –50
Tc = –25°C
75°C
V
DS
= –10 V
Pulse Test
25°C
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
100
50
10
20
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
0 –10 –20 –30 –40 –50
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
200
500
1000
100
20
50
10
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
0
0
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
0
–20
–16
–12
–8
–4
–50
–40
–30
–20
–10
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
816243240
V
DS
V
GS
1000
200
500
100
20
50
5
10
–0.2 –0.5 –1 –2 –10 –20–5 –50
–0.1
tf
tr
td(off)
td(on)
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
V
DD
= –5 V
–10 V
–25 V
V
DD
= –25 V
–10 V
–5 V
–10 V
V
GS
= –4 V
–5 A
–10 A
–2 A
–2 A, –5 A
V
GS
= –10 V, V
DD
= –10 V
PW = 10 µs, duty ≤ 1 %
2SJ506(L), 2SJ506(S)
Rev.5.00 Sep 07, 2005 page 5 of 7
–20
0
–4
–8
–12
–16
0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
–0.4 –0.8 –1.2 –1.6 –2.0
Pulse Test
–
10 V
–
5 V
V
GS
= 0, 5 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
P
DM
PW
T
D = PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
Vin Monitor
D.U.T.
Vin
–10 V
R
L
Vout
Monitor
50 Ω
V
DD
= –10 V
2SJ506(L), 2SJ506(S)
Rev.5.00 Sep 07, 2005 page 6 of 7
Package Dime nsions
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
4.7 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
3.1 ± 0.5
(0.7)
Package Name
PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V
MASS[Typ.]
0.42g
RENESAS CodeJEITA Package Code
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
1.0 Max.
(0.1)(0.1)
Package Name
PRSS0004ZD-C DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28gSC-63
RENESAS CodeJEITA Package Code
Unit: mm
2SJ506(L), 2SJ506(S)
Rev.5.00 Sep 07, 2005 page 7 of 7
Ordering Information
Part Name Quantity Shipping Container
2SJ506L-E 3200 pcs Box (Sack)
2SJ506STL-E 3000 pcs Taping
Note: For some grades, production may be terminated. Pl ease contact the Renesas sales office to check the state of
production before ordering the product.
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