2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous: ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features * Low on-resistance RDS (on) = 0.065 typ. (at VGS = -10 V, ID = -5 A) * Low drive current * High speed switching * 4 V gate drive devices. Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 4 1 1 2 3 Rev.5.00 Sep 07, 2005 page 1 of 7 2 D 1. Gate 2. Drain 3. Source 4. Drain G 3 S 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol VDSS Value -30 Unit V VGSS ID 20 -10 V A -40 -10 A A 20 150 W C -55 to +150 C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel temperature Pch Tch Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Tstg Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min -30 Typ -- Max -- Unit V Gate to source breakdown voltage Zero gate voltage drain current V (BR) GSS IDSS 20 -- -- -- -- -10 V A IG = 100 A, VDS = 0 VDS = -30 V, VGS = 0 IGSS VGS (off) -- -1.0 -- -- 10 -2.0 A V VGS = 16 V, VDS = 0 ID = -1 mA, VDS = -10 V RDS (on) RDS (on) -- -- 65 110 85 180 m m ID = -5 A, VGS = -10 V Note 3 ID = -5 A, VGS = -4 V Forward transfer admittance Input capacitance |yfs| Ciss 10 -- 16 660 -- -- S pF Output capacitance Reverse transfer capacitance Coss Crss -- -- 440 140 -- -- pF pF ID = -5 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz Turn-on delay time Rise time td (on) tr -- -- 12 65 -- -- ns ns Turn-off delay time Fall time td (off) tf -- -- 85 65 -- -- ns ns Body to drain diode forward voltage Body to drain diode reverse recovery time VDF trr -- -- -1.05 65 -- -- V ns Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Note: 3. Pulse test Rev.5.00 Sep 07, 2005 page 2 of 7 Test Conditions ID = -10 mA, VGS = 0 Note 3 VGS = -10 V ID = -5 A RL = 2 IF = -10 A, VGS = 0 IF = -10 A, VGS = 0 diF/dt = 50 A/s Note 3 2SJ506(L), 2SJ506(S) Main Characteristics Maximum Safe Operation Area -500 30 -200 -100 -50 ID (A) 40 Drain Current Channel Dissipation Pch (W) Power vs. Temperature Derating 20 10 0 0 50 100 150 Case Temperature 10 -20 -10 -5 DC -2 -1 -0.5 Tc (C) -16 -4 V -16 -12 Drain Current Drain Current VDS = -10 V Pulse Test -3.5 V -8 -3 V -4 -8 75C -4 VGS = -2.5 V 0 -4 -8 -12 Drain to Source Voltage 0 -20 -16 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test -1.6 -1.2 -0.8 ID = -10 A -0.4 -5 A -2 A 0 0 -4 -8 -12 Gate to Source Voltage Rev.5.00 Sep 07, 2005 page 3 of 7 -16 -20 VGS (V) 0 -1 -2 -3 -4 Gate to Source Voltage VDS (V) -2.0 Tc = -25C 25C -5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) VDS (V) -20 Pulse Test -12 0 -50 Typical Transfer Characteristics -8 V -6 V -5 V -4.5 V -5 -10 -20 Drain to Source Voltage ID (A) ID (A) -20 =1 0m Op s( era 1s tio ho n( t) Tc =2 5C ) Operation in this area is limited by RDS (on) Typical Output Characteristics -10 V PW -0.2 Ta = 25C -0.1 -0.1-0.2 -0.5 -1 -2 200 s 10 0 1 m s s 1000 500 200 VGS = -4 V 100 -10 V 50 20 Pulse Test 10 -1 -2 -5 -10 Drain Current -20 -50 -100 ID (A) 2SJ506(L), 2SJ506(S) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature 200 Pulse Test 160 ID = -10 A VGS = -4 V -5 A -2 A 120 80 -10 A -2 A, -5 A -10 V 40 0 -40 0 40 80 Case Temperature 120 160 100 50 20 Tc = -25C 10 5 25C 2 75C 1 VDS = -10 V Pulse Test 0.5 -0.1 -0.2 -0.5 -1 -2 Tc (C) Typical Capacitance vs. Drain to Source Voltage 5000 VGS = 0 f = 1 MHz 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) 100 50 20 di / dt = 50 A / s VGS = 0, Ta = 25C 10 -0.1 -0.2 -0.5 -1 -2 -5 Reverse Drain Current 1000 Coss 200 50 10 IDR (A) -30 VGS -40 0 8 16 Gate Charge Rev.5.00 Sep 07, 2005 page 4 of 7 -12 -16 ID = -10 A -50 -8 24 32 Qg (nc) -20 40 VGS (V) -4 VDD = -25 V -10 V -5 V VDS -20 -30 -40 -50 1000 VGS = -10 V, VDD = -10 V 500 PW = 10 s, duty 1 % Switching Time t (ns) -20 -10 Switching Characteristics Gate to Source Voltage -10 0 Drain to Source Voltage VDS (V) 0 VDD = -5 V -10 V -25 V Crss 100 20 -10 -20 0 Ciss 500 Dynamic Input Characteristics VDS (V) -50 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage -5 -10 -20 200 td(off) 100 50 tf tr 20 td(on) 10 5 -0.1 -0.2 -0.5 -1 -2 Drain Current -5 -10 -20 ID (A) -50 2SJ506(L), 2SJ506(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) -20 Pulse Test -16 -10 V -12 -5 V -8 VGS = 0, 5 V -4 0 -1.2 -1.6 Source to Drain Voltage VSD 0 -0.4 -0.8 -2.0 (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 ch - c (t) = s (t) * ch - c ch - c = 6.25C/W, Tc = 25C 0.05 0.02 0.03 0.0 1s 1 t ho D= PDM pu lse 0.01 10 PW T PW T 100 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 90% 90% Vin -10 V 50 VDD = -10 V Vout td(on) Rev.5.00 Sep 07, 2005 page 5 of 7 10% tr 10% td(off) tf 2SJ506(L), 2SJ506(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g Unit: mm 1.7 0.5 JEITA Package Code 2.3 0.2 0.55 0.1 1.2 0.3 16.2 0.5 3.1 0.5 1.15 0.1 0.8 0.1 (0.7) 4.7 0.5 5.5 0.5 6.5 0.5 5.4 0.5 0.55 0.1 0.55 0.1 2.29 0.5 2.29 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 0.5 5.4 0.5 (0.1) Unit: mm 2.3 0.2 0.55 0.1 0 - 0.25 2.5 0.5 (1.2) 1.0 Max. 2.29 0.5 Rev.5.00 Sep 07, 2005 page 6 of 7 (5.1) (5.1) (0.1) 1.2 Max 5.5 0.5 1.5 0.5 JEITA Package Code 0.8 0.1 2.29 0.5 0.55 0.1 2SJ506(L), 2SJ506(S) Ordering Information Part Name 2SJ506L-E 2SJ506STL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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