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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (limited by leads) 7 5 A
IC90 TC= 90°C45A
ICM TC= 25 °C, 1 ms 1 8 0 A
SSOA VGE= 15 V, TJ = 125°C, RG = 5 W ICM = 90 A
(RBSOA) Clamped inductive load @ 0.8 VCES
tSC TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 5 W 10 ms
PCTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight TO-247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 1.0 mA, VGE = 0 V 1200 V
VGE(th) IC= 250 mA, VCE = VGE 36V
ICES VCE = 0.8 • VCES 50 mA
Note 1 TJ = 125°C 2.5 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 1 5 V 2.5 3.0 V
Note 2 TJ = 125°C 2.6 V
Features
• Epitaxial Silicon drift region
- fast switching
- small tail current
• MOS gate turn-on for drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• Welding
98713A (7/00)
G = Gate C = Collector
S = Emitter TAB = Collector
TO-247 AD (IXSH)
(TAB)
TO-268 ( IXST)
(TAB)
GE
IXSH 45N120B
IXST 45N120B IC25 = 75 A
VCES = 1200 V
VCE(sat) = 3.0 V
High Voltage IGBT
"S" Series - Improved SCSOA Capability
GCE
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 1 6 2 3 S
Note 2
Cies 3300 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 2 40 p F
Cres 65 pF
Qg120 nC
Qge IC= IC90, VGE = 15 V, VCE = 0.5 VCES 40 nC
Qgc 45 nC
td(on) 36 ns
tri 27 ns
td(off) 360 500 ns
tfi 380 750 ns
Eoff 13 22 mJ
td(on) 38 ns
tri 29 ns
Eon 2.9 mJ
td(off) 440 ns
tfi 700 ns
Eoff 22 mJ
RthJC 0.42 K/W
RthCK (TO-247) 0.25 K/W
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
RG = 5 W, VCE = 0.8 VCES
Note 3
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
RG = 5 W
VCE = 0.8 VCES
Note 3
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2 . Pulse test, t £ 300 ms, duty cycle £ 2 %
3 . Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
IXSH 45N120B
IXST 45N120B
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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