Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England
mailto:sales@isocom.uk.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055
Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics
Similar Optocouplers
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IS660, IS661, IS662
High Voltage Photodarlington Isolators
Circuit
Features
High CTR - 1000% Min
5000 V Isolation
High Collector-Emitter Breakdown Voltage of 200 V, 300 V or 400 V Min
Low Input Current Requirement - 1 mA
Description
The IS660, IS661 and IS662 are optically coupled isolators consisting of a Gallium Arsenide infrared
emitting diode and NPN silicon photodarlington transistor connected with diffusion resistor between the
base and emitter at the output to minimise dark current, mounted in a standard 6-pin dual-in-line package.
Surface Mount Option Available.
All electrical parameters are 100% tested. Specifications are guaranteed to a cumulative 0.65% AQL.
Absolute Maximum Ratings (Ta=25°C)
Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-to-Output Isolation Voltage:
-55°C to +150°C
-55°C to +100°C
260°C for 10s, 1.6mm from case
±5000V
Input Diode
Forward DC Current:
Forward Current Peak:
Reverse DC Voltage:
Power Dissipation:
Derate Linearly:
60mA
1A (1µs p.w. 300pps)
6V
70mW
0.93mW/°C above 25°C
Output Transistor
Collector-Emitter Voltage, BVceo:
Collector-Base Voltage, BVcbo:
Emitter-Base Voltage:
Power Dissipation:
Derate Linearly:
200V (IS660)
300V (IS661)
400V (IS662)
200V (IS660)
300V (IS661)
400V (IS662)
6V
300mW
4.0mW/°C above 25°C
Package
Total Power Dissipation:
Derate Linearly:
350mW
4.67mW/°C above 25°C
Electro-optical Characteristics (Ta=25°C)
INPUT
PARAMETER
CONDITIONS
MIN
TYP
UNIT
VF
Forward Voltage
IF=10mA
1.2
V
IR
Reverse Current
VR=6.0V
µA
VR
Reverse Breakdown Voltage
IR=10µA
6.0
V
OUTPUT
PARAMETER
CONDITIONS
MIN
TYP
UNIT
BVCEO
Collector-Emitter Voltage
IS660
IC=1mA, IF=0
200
260
V
IS661
300
350
V
IS662
400
440
V
BVCBO
Collector-Base Voltage
IS660
IC=0.1mA, IF=0
200
V
IS661
300
V
IS662
400
V
BVEBO
Emitter-Base Voltage
IE=0.1mA, IF=0
6
V
ICEO
Collector-Emitter Dark Current
IF=0, VCE=100V
nA
COUPLED
PARAMETER
CONDITIONS
MIN
TYP
UNIT
CTR
DC Current Transfer Ratio IC/IF, note
2
IF=1mA, VCE=2V, IB=0
1000
5000
%
RIO
Input-to-Output Isolation Resistance
VIO=500V, note 1
100
Gohm
VCE(SAT)
Collector-Emitter Saturation Voltage
IC=100mA, IF=10mA
V
CIO
Capacitance Input to Output
V=0, f=1MHz
0.6
pF
TR
Output Rise Time
IC=20mA, VCE=2V,
RL=100ohm
130
µs
TF
Output Rise Time
30
µs
fC
Cut-Off Frequency
1
4
kHz
Input-to-Output Isolation Voltage
Note 1
5000
V
Notes
1. Measured with input leads shorted together and output leads shorted together.
2. Current Transfer Ratio can be selected up to 15000% depending on quantity.
Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its
website. Visit File Lists to confirm old printouts are up-to-date.
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