TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
T4-LDS-0058 Rev. 1 (080853) Page 1 of 2
DEVICES LEVELS
2N2484UA JAN
2N2484UB JANTX
2N2484UBC * JANTXV
JANS
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 50 mAdc
Total Power Dissipation @ TA = +25°C (1) P
T 360 mW
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Value Unit
Thermal Resistance, Ambient-to-Case
2N2484
2N2484UA
2N2484UB, UBC
RθJA 325
275
350
°C/W
1. See 19500/376 for Thermal Performance Curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc V(BR)CEO 60 Vdc
Collector-Emitter Cutoff Current
VCE = 45Vdc ICES 5.0 ηAdc
Collector-Base Cutoff Current
VCB = 45Vdc
VCB = 60Vdc ICBO 5.0
10 ηAdc
μAdc
Collector-Emitter Cutoff Current
VCE = 5.0Vdc
ICEO 2.0 ηAdc
TO-18 (TO-206AA)
2N2484
2N2484UA
2N2484UB, UBC
(UBC = Ceramic Lid Version)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
T4-LDS-0058 Rev. 1 (080853) Page 2 of 2
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 6.0Vdc
IEBO 2.0
10
ηAdc
μAdc
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 1.0μAdc, VCE = 5.0Vdc
IC = 10μAdc, VCE = 5.0Vdc
IC = 100μAdc, VCE = 5.0Vdc
IC = 500μAdc, VCE = 5.0Vdc
IC = 1.0mAdc, VCE = 5.0Vdc
IC = 10mAdc, VCE = 5.0Vdc
hFE
45
200
225
250
250
225
500
675
800
800
800
Collector-Emitter Saturation Voltage
IC = 1.0mAdc, IB = 100μAdc
VCE(sat) 0.3 Vdc
Base-Emitter Voltage
VCE = 5.0Vdc, IC = 100μAdc
VBE(ON) 0.5 0.7 Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Current Transfer Ratio
IC = 50μAdc, VCE = 5.0Vdc, f = 5.0MHz
IC = 500μAdc, VCE = 5.0Vdc, f = 30MHz |hfe| 3.0
2.0
0.7
Open Circuit Output Admittance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hoe 40
μmhos
Open Circuit Reverse-Voltage Transfer Ratio
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hre 8.0 x 10-4
Input Impedance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hje 3.5 24
kΩ
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hfe 250 900
Output Capacitance
VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo 5.0 pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo 6.0 pF
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
