POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Thyristor Modules
Thyristor/Diode Modules
VRSM VRRM Type
VDSM VDRM
V V Version 1 Version 1
900 800 PSKT 132/08io1 PSKH 132/08io1
1300 1200 PSKT 132/12io1 PSKH 132/12io1
1500 1400 PSKT 132/14io1 PSKH 132/14io1
1700 1600 PSKT 132/16io1 PSKH 132/16io1
1900 1800 PSKT 132/18io1 PSKH 132/18io1
ITRMS = 2x 300 A
ITAVM = 2x 130 A
VRRM = 800-1800 V
PSKH
Version 1
PSKT
Version 1
3671 542
31542
PSKT 132
PSKH 132
Features
●International standard package
●Direct copper bonded Al2O3 -ceramic
base plate
●Planar passivated chips
●Isolation voltage 3600 V~
●UL registered, E 148688
●Keyed gate/cathode twin pins
Applications
●Motor control
●Power converter
●Heat and temperature control for
industrial furnaces and chemical
processes
●Lighting control
●Contactless switches
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling capability
●Reduced protection circuits
Symbol Test Conditions Maximum Ratings
ITRMS, IFRMS TVJ = TVJM 300 A
ITAVM, IFAVM TC = 85°C; 180° sine 130 A
ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 4750 A
VR = 0 t = 8.3 ms (60 Hz), sine 5080 A
TVJ = TVJM t = 10 ms (50 Hz), sine 4230 A
VR = 0 t = 8.3 ms (60 Hz), sine 4530 A
∫∫
∫∫
∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 113 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 108 000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 89 500 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 86 200 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 500 A 150 A/µs
f =50 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 0.5 A non repetitive, IT = 500 A 500 A/µs
diG/dt = 0.5 A/µs
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 µs 120 W
IT = ITAVM tP = 500 µs 60 W
PGAV 8W
VRGM 10 V
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M6) 2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M6) 4.5-5.5/40-48 Nm/lb.in.
Weight Typical including screws 125 g
1
2
367
54
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POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKTPSKT
PSKTPSKT
PSKT PSKHPSKH
PSKHPSKH
PSKH
Symbol Test Conditions Characteristic Values
IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM 10 mA
VT, VFIT, IF = 300 A; TVJ = 25°C 1.36 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.8 V
rT1.5 mΩ
VGT VD = 6 V; TVJ = 25°C 2.5 V
TVJ = -40°C 2.6 V
IGT VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM 0.2 V
IGD 10 mA
ILTVJ = 25°C; tP = 30 µs; VD = 6 V 300 mA
IG = 0.5 A; diG/dt = 0.5 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞200 mA
tgd TVJ = 25°C; VD = 1/2 VDRM 2µs
IG = 0.5 A; diG/dt = 0.5 A/µs
tqTVJ = TVJM; IT = 160 A, tP = 200 µs; -di/dt = 10 A/µs typ. 150 µs
VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM
QSTVJ = TVJM; IT, IF = 300 A, -di/dt = 50 A/µs 550 µC
IRM 235 A
RthJC per thyristor/diode; DC current 0.23 K/W
per module other values 0.115 K/W
RthJK per thyristor/diode; DC current see Fig. 8/9 0.33 K/W
per module 0.165 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
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POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig. 4 i2t versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
s
t
ms
t
0.001 0.01 0.1 1
0
1000
2000
3000
4000
110
104
105
106
A2s
ITSM
Ai2t
TVJ = 45°C
TVJ = 125°C
80 % VRRM
TVJ = 45°C
50 Hz
TVJ = 125°C
Circuit
B 6
3xPSKT132 or
3xPSKH 132
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2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.230
180° 0.244
120° 0.255
60° 0.283
30° 0.321
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0095 0.001
2 0.0175 0.065
3 0.203 0.4
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.330
180° 0.344
120° 0.355
60° 0.383
30° 0.421
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0095 0.001
2 0.0175 0.065
3 0.203 0.4
4 0.1 1.29
Circuit
W 3
3xPSKT132 or
3xPSKH 132
ZthJC(t)
ZthJK(t)
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