UTV200 20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE The UTV 200 is a COMMON EMITTER transistor capable of providing 20 Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. The transistor includes double input prematching for full broadband capability. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness. 55JV, STYLE 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 80 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVceo Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 50 Volts 28 Volts 4.0 Volts 4.5 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS Pout Pin Pg IMD1 VSWR1 Power Out - Pk Sync Power Input Power Gain Intermodulation Distortion Load Mismatch Tolerance F = 470 - 860 MHz Vcc = 26.5 Volts Ic = 2.7 Amps Pref = 20Watts F = 860 MHz LVceo2 BVces2 BVebo2 hFE2 Cob2 jc Collector to Emitter Breakdown Collector to Base Breakdown Emitter to Base Breakdown Current Gain Output Capacitance Thermal Resistance Ic = 40 mA Ic = 20mA Ie = 10 mA Vce = 5 V, 1 A Vcb = 26 V, F = 1 MHz Tc = 25oC MIN TYP MAX 20 2.8 8.5 28 50 4 10 9.5 -48 -46 3:1 UNITS Watts Watts dB dB Volts Volts Volts 150 36 1.2 o pF C/W Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB Note 2: Per side Initial Issue June, 1994 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 UTV200 UTV-200 Vce 1 Vbe 2 C5 C5 + C24 C28 + + C16 C8 C8 C14 + C15 L1 L3 C2 L3 L7 T1 C20 L5 T3 C22 C4 C1 50 OHM RF IN R1 Q1 C6 C9 C19 C13 C21 L6 T2 C3 L5 L8 T4 50 OHM RF OUT L4 L2 C7 C23 C10 C12 + C18 + + C25 C26 + C17 C29 C30 CAPACITORS C1,C6=4.7 pF ATC series A Vce 2 BIAS CIRCUIT Vbe 1 C2,C3,C20,C21=33 pF ATC series A + R4 R6 R8 R2 C4,C9=1.2-3.5 pF film diel. trimmer C31 C5,C7,C11,C12=0.01 mF, 50V Tantalum Vce 1 Vce 2 C8,C15,C17,C25=1 mF, 50 V Tantalum CR1 Q2 CR2 Q3 C10,C16,C27,C12=0.1 mF 50 V disc ceramic R7 R3 C13=0.6-6 pF piston trimmer R5 R9 INDUCTORS C19=0.35-3.5 pF piston trimmer L1,L2=0.46 microHenry molded C18,C24,C14,C26=10 mF, 50 V Vbe 1 L3,L4=1 turn #18 magnet wire on a 0.325" form Vbe 2 C28,C30=0.001 mF, 50 V disc ceramic C31=100 mF, 50 V electrolytic MICROSTRIPLINES TRANSISTORS L3,L4=0.075" X 0.65" Q1=GHz UTV-200 RESISTORS L5,L6=0.120" X 0.31" Q2,Q3=MJE172 R1=10 Ohm, 1/2 W Carbon L7,L8=0.120" X 1.33" R2,R6=500 Ohm potentiometer TRANSFORMERS R3,R7=4.7K Ohm, 3W, 1% Carbon DIODES R4,R8=1 Ohm, 3W, 1% Carbon film T1,T2,T3,T4=50 Ohm semi-rigid coax cable CR1,CR2=IN4148 (0.056" X 1.1") soldered to 0.035" X 1.1" microstrip R5,R9=47 Ohm, 1/4W Carbon film August 1996