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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ465
DC−DC Converter, Relay Drive and Motor Drive
Applications
2.5-V gate drive
Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.)
High forward transfer admittance : |Yfs| = 1.7 S (typ.)
Low leakage current : IDSS = −100 µA (max)
(VDS = −16 V)
Enhancement mode : Vth = −0.5~−1.1 V
(VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage VDSS −16 V
Drain−gate voltage (RGS = 20 kΩ) VDGR −16 V
Gate−source voltage VGSS ±8 V
DC (Note 1) ID −2
Drain current
Pulse (Note 1) IDP −6
A
Drain power dissipation PD 0.5 W
Drain power dissipation (Note 2) PD 1.5 W
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to
ambient Rth (ch−a) 250 °C / W
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Marking
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2−5K1B
Weight: 0.05 g (typ.)
Z 9
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±6.5 V, VDS = 0 V — — ±10 µA
Drain cut−off current IDSS V
DS = −16 V, VGS = 0 V — — −100 µA
Drain−source breakdown
voltage V (BR) DSS I
D = −10 mA, VGS = 0 V −16 — — V
Gate threshold voltage Vth V
DS = −10 V, ID = −200 µA −0.5 — −1.1 V
VGS = −2.5 V, ID = −0.5 A — 0.86 1.0
Drain−source ON resistance RDS (ON)
VGS = −4 V, ID = −1 A — 0.54 0.71
Ω
Forward transfer admittance |Yfs| VDS = −10 V, ID = −1 A 0.8 1.7 — S
Input capacitance Ciss — 270 —
Reverse transfer capacitance Crss — 25 —
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
— 115 —
pF
Rise time tr — 200 —
Turn−on time ton — 250 —
Fall time tf — 200 —
Switching time
Turn−off time toff — 500 —
ns
Total gate charge
(Gate−source plus gate−drain) Qg — 5 —
Gate−source charge Qgs — 3.2 —
Gate−drain (“miller”) charge Qgd
VDD ≈ −16 V, VGS = −5 V, ID = −2 A
— 1.8 —
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR — — — −2 A
Pulse drain reverse current
(Note 1)
IDRP — — — −6 A
Forward voltage (diode) VDSF I
DR = −2 A, VGS = 0 V — — 1.7 V
Reverse recovery time trr — 130 — ns
Reverse recovery charge Qrr
IDR = −2 A, VGS = 0 V
dIDR / dt = 50 A / µs — 0.13 — µC
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030619EAA
RESTRICTIONS ON PRODUCT USE
