APTGT200DA170D3G
APTGT200DA170D3G – Rev 1 September, 2008
www.microsemi.com 1-5
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1700 V
TC = 25°C 310
IC Continuous Collector Current TC = 80°C 200
ICM Pulsed Collector Current TC = 25°C 400
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 1250 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 400A@1650V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1
2
3
Q2
6
7
VCES = 1700V
IC = 200A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Boost chopper
Trench + Field Stop IGBT
Power Module
APTGT200DA170D3G
APTGT200DA170D3G – Rev 1 September, 2008
www.microsemi.com 2-5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 3 mA
Tj = 25°C 2.0 2.5
VCE(on) Collector Emitter on Voltage VGE = 15V
IC = 200A Tj = 125°C 2.4 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 8 mA 5.2 5.8 6.4 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 18
Cres Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz 0.6 nF
QG Gate charge VGE=±15V, IC=200A
VCE=900V 2.3 µC
Td(on) Turn-on Delay Time 280
Tr Rise Time 80
Td(off) Turn-off Delay Time 850
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 200A
RG = 6.8Ω 120
ns
Td(on) Turn-on Delay Time 300
Tr Rise Time 100
Td(off) Turn-off Delay Time 1000
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 200A
RG = 6.8Ω 200
ns
Tj = 25°C 58
Eon Turn On Energy Tj = 125°C 78
Tj = 25°C 43
Eoff Turn Off Energy
VGE = ±15V
VBus = 900V
IC = 200A
RG = 6.8Ω Tj = 125°C 63
mJ
Isc Short Circuit data VGE ≤15V ; VBus = 1000V
tp ≤ 10µs ; Tj = 125°C 800 A
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1700 V
Tj = 25°C 750
IRRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 1000 µA
IF DC Forward Current Tc = 80°C 200 A
Tj = 25°C 1.8 2.2
VF Diode Forward Voltage IF = 200A Tj = 125°C 1.9 V
Tj = 25°C 385
trr Reverse Recovery Time Tj = 125°C 490 ns
Tj = 25°C 56
Qrr Reverse Recovery Charge Tj = 125°C 92 µC
Tj = 25°C 24
Err Reverse Recovery Energy
IF = 200A
VR = 900V
di/dt =3200A/µs
Tj = 125°C 48 mJ
APTGT200DA170D3G
APTGT200DA170D3G – Rev 1 September, 2008
www.microsemi.com 3-5
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.10
RthJC Junction to Case Thermal Resistance Diode 0.16 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
For terminals M6 3 5
Torque Mounting torque To Heatsink M6 3 5 N.m
Wt Package Weight 350 g
D3 Package outline (dimensions in mm)
1°
A
DÉTAIL A
APTGT200DA170D3G
APTGT200DA170D3G – Rev 1 September, 2008
www.microsemi.com 4-5
Typical Performance Curve
Output Characteristics ( V
GE
=15V)
TJ=25°C
TJ=125°C
0
100
200
300
400
00.511.522.533.54
V
CE
(V)
I
C
(A)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=20V
V
GE
=9V
0
50
100
150
200
250
300
350
400
012345
V
CE
(V)
I
C
(A)
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
50
100
150
200
250
300
350
400
5 6 7 8 9 10 11
V
GE
(V)
I
C
(A)
Energy losses vs Collector Current
Eon
Eoff
Err
0
50
100
150
200
0 50 100 150 200 250 300 350 400
I
C
(A)
E (mJ)
V
CE
= 900V
V
GE
= 15V
R
G
= 6.8Ω
T
J
= 125°C
Eon
Eoff
Err
0
100
200
300
400
0 1020304050
Gate Resistance ( ohms)
E (mJ)
V
CE
= 900V
V
GE
=15V
I
C
= 200A
T
J
= 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Saf e Operating Area
0
100
200
300
400
500
0 400 800 1200 1600 2000
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=125°C
R
G
=6.8Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular P ulse Duration (Secon ds)
Thermal Impedance (° C/W)
IGBT
APTGT200DA170D3G
APTGT200DA170D3G – Rev 1 September, 2008
www.microsemi.com 5-5
Forward Characteristic of diode
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
50
100
150
200
250
300
350
400
00.511.522.53
V
F
(V)
I
F
(A)
hard
switching
ZCS
ZVS
0
5
10
15
20
25
30
0 50 100 150 200 250 300
I
C
(A)
Fmax, Operating Frequency (kHz)
V
CE
=900V
D=50%
R
G
=6.8 Ω
T
J
=125°C
T
C
=75°C
Operating Frequency vs Collector Current
maxim u m Effective Tran sient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
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Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
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