MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM5964-45SL
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DIST ORTION HIGH GAIN
IM3=-45 dBc at Pout= 35.5dBm G1dB=9.0dB at 5.9GHz to 6.4GHz
Single Carrier Level BROAD BAND INTERNALLY MATCHED FET
HIGH POWER HERMETICALLY SEALED PACKAGE
P1dB=46.5dBm at 5.9GHz to 6.4GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P1dB dBm 46.0 46.5 ⎯
Power Gain at 1dB Gain
Compression Point G1dB dB 8.0 9.0 ⎯
Drain Current IDS A ⎯ 9.6 10.8
Gain Flatness ΔG dB ⎯ ⎯ ±0.8
Power Added Efficiency ηadd
VDS=10V
f = 5.9 to 6.4GHz
% ⎯ 41 ⎯
3rd Order Intermodulation
Distortion IM3 Two-Tone Test
Po=35.5dBm
(Single Carrier Level)
dBc -42 -45 ⎯
Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB)
X Rth(c-c) °C ⎯ ⎯ 100
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm VDS= 3V
I
DS= 11.0A mS ⎯ 8000 ⎯
Pinch-off Voltage VGSoff V
DS= 3V
I
DS= 170mA V -1.0 -2.5 -4.0
Saturated Drain Current IDSS V
DS= 3V
V
GS= 0V A ⎯ 24 ⎯
Gate-Source Breakdown
Voltage VGSO I
GS= -500μA V -5
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ 0.8 1.2
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006
TIM5964-45SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 15
Gate-Source Voltage VGS V -5
Drain Current IDS A 20
Total Power Dissipation (Tc= 25 °C) PT W 125
Channel Temperature Tch °C 175
Storage Temperature Tstg °C -65 to +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time s hould not exceed 10 seconds
at 260°C.
2
TIM5964-45SL
RF PERFORMANCES
3
VDS=10V
IDS≅9.6A
Pin=37.5dBm
Output Power(Pout) vs. Input Power(Pin)
freq.=6.4GHz
VDS=10V
IDS≅9.6A
Pout
ηadd
Pin(dBm)
Pout(dBm)
5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5
Frequency (GHz)
49
47
46
45
44
Output Power (Pout) vs. Frequency
48
47
46
45
44
43
42
41
40
80
70
60
50
40
30
20
10
31 33 35 37 39 41
ηadd(%)
Pout(dBm)
TIM5964-45SL
Power Dissipation(PT) vs. Case Temperature(Tc)
Tc( °C )
IM3 vs. Output Power Characteristics
VDS=10V
IDS≅9.6A
freq.=6.4GHz
Δf=5MHz
0
PT(W)
130
110
90
70
50
30
40 80 120 160
200
30
-10
36 38 40
32 34
-30
-40
-50
-60
IM3(dBc)
-20
Pout(dBm) @Single carrier level
4
