Document Number: 81055 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 2.2, 29-Jun-09 1
Infrared Emitting Diode, 950 nm, GaAs
TSUS5200, TSUS5201, TSUS5202
Vishay Semiconductors
DESCRIPTION
TSUS5200 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 15°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8390
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)
TSUS5200 20 ± 15 950 800
TSUS5201 25 ± 15 950 800
TSUS5202 30 ± 15 950 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSUS5200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSUS5201 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSUS5202 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF150 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 300 mA
Surge forward current tp = 100 µs IFSM 2.5 A
Power dissipation PV170 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81055
2Rev. 2.2, 29-Jun-09
TSUS5200, TSUS5201, TSUS5202
Vishay Semiconductors Infrared Emitting Diode, 950 nm,
GaAs
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
0
20
40
60
80
100
120
140
160
180
01020304050607080 90 100
21313
T
amb
- Ambient Temperature (°C)
PV - Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 1020304050607080 90 100
T
amb
- Ambient Temperature (°C)
21314
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.3 1.7 V
Temperature coefficient of VFIF = 100 mA TKVF - 1.3 mV/K
Reverse current VR = 5 V IR100 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj30 pF
Temperature coefficient of φeIF = 20 mA TKφe- 0.8 %/K
Angle of half intensity ϕ± 15 deg
Peak wavelength IF = 100 mA λp950 nm
Spectral bandwidth IF = 100 mA Δλ 50 nm
Temperature coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr800 ns
IF = 1.5 A tr400 ns
Fall time IF = 100 mA tf800 ns
IF = 1.5 A tf400 ns
Virtual source diameter d 3.8 mm
Document Number: 81055 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 2.2, 29-Jun-09 3
TSUS5200, TSUS5201, TSUS5202
Infrared Emitting Diode, 950 nm,
GaAs Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 1.5 A, tp = 100 µs
TSUS5200 VF2.2 3.4 V
TSUS5201 VF2.2 3.4 V
TSUS5202 VF2.2 2.7 V
Radiant intensity
IF = 100 mA, tp = 20 ms
TSUS5200 Ie10 20 50 mW/sr
TSUS5201 Ie15 25 50 mW/sr
TSUS5202 Ie20 30 50 mW/sr
IF = 1.5 A, tp = 100 µs
TSUS5200 Ie95 180 mW/sr
TSUS5201 Ie120 230 mW/sr
TSUS5202 Ie170 280 mW/sr
Radiant power IF = 100 mA, tp = 20 ms
TSUS5200 φe13 mW
TSUS5201 φe14 mW
TSUS5202 φe15 mW
tp- Pulse Duration (ms)
94 7989
100
101
101
10-1
10-1 100102
10-2
I- Forward Current (A)
F
tp/T = 0.01
IFSM = 2.5 A ( Single Pulse )
0.05
0.1
0.5
1.0
94 7996
10 1
10 0
10 2
10 3
10 4
10-1
I- Forward Current (mA)
F
43210
V
F- Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
VF rel - Relative Forward Voltage (V)
94 7990 Tamb - Ambient Temperature (°C)
100806040200
IF = 10 mA
IF- Forward Current (mA)
94 7991
103
101102104
100
1
10
100
1000
I - Radiant Intensity (mW/sr)
e
TSUS5200
TSUS 5202
TSUS 5201
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81055
4Rev. 2.2, 29-Jun-09
TSUS5200, TSUS5201, TSUS5202
Vishay Semiconductors Infrared Emitting Diode, 950 nm,
GaAs
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
- Radiant Power (mW)
e
IF- Forward Current (mA)
94 7992
103
101102104
100
0.1
1
10
1000
100
TSUS5200
TSUS 5202
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1
.
6
I
e rel
;
140
94 7993
I
F
= 20 mA
Φ
e rel
T
amb
- Ambient Temperature (°C)
900 950
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
1000
94 7994
Φe rel - Relative Radiant Power
IF = 100 mA
0.4 0.2 0 0.2 0.4
I - Relative Radiant Intensity
e rel
0.6
94 7995
0.6
0.9
0.8
0°
30°
10°20°
40°
50°
60°
70°
80°
0.7
1.0
(4.7)
12.5 ± 0.3
AC
35.5 ± 0.55
< 0.7
1.1 ± 0.25
0.5 + 0.15
- 0.05
Ø 5 ± 0.15
2.54 nom.
0.5 + 0.15
- 0.05
Ø 5.8 ± 0.15
8.7 ± 0.3
7.7 ± 0.15
1 min.
Area not plane
technical drawings
according to DIN
specifications
R 2.49 (sphere)
6.544-5258.02-4
Issue: 6; 19.05.09
95 10916
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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