VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
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SCOTTSDALE DIVISION
1N6626US thru 1N6631US
1N6626US – 1N6631US
DESCRIPTION APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/590 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 10 00 volts are hermetically sealed with voidless-
glass construction usi ng an internal “Categ ory I” metallurg ical bond. T hese devices
are also available in axial-leaded packages for thru-hole mounting (see separate
data sheet for 1N6626 thru 1N6631). Microsemi also offers numero us other rectifier
products to meet higher and lo wer current ratings with various recovery time spee d
requirements including stand ard, fast and u ltrafast device types in both through-hole
and surface mount packages.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENE FITS
• Surface mount series equivalent to the JEDEC registered
1N6626 to 1N6631 series
• Voidless hermetically s ealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/590
• Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefi x, e.g.
SP6626US, SP6629US, etc.
• Axial-leaded e quivalents also availabl e (see separate data
sheet for 1N6626 thru 1N6631)
• Ultrafast recovery rectifier series 200 to 1000 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
• Peak Forward Surge Current @ 25oC: 75A (except
1N6631 which is 60A)
Note: Test pulse = 8.3ms, half-sine wave.
• Average Rectified For ward Current (IO) at TEC = +110oC:
1N6626US thru 1N6628US 4.0 A
1N6629US thru 1N6631US 2.8 A
(Derate linearly at 1.5%/oC for TEC > +110oC)
• Average Rectified For ward Current (IO) at TA=25oC:
1N6626US thru 1N6628US 1.55 A
1N6629US thru 1N6631US 1.15 A
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO rating
is for PC boards where thermal resistance from mounting
point to ambient is sufficiently controlled where TJ(max) is
not exceeded. See latest issue of MIL-PRF-19500/590)
• Thermal Resistance junction to endcap (RθJEC): 10oC/W
• Capacitance at VR= 10 V: 40 pF
• Solder temperature: 260oC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous
inventory had solid Silver end caps with
Tin/Lead finish.
• MARKING: Cathode band only
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-481-B
• Weight: 539 mg
• See package dimensions and recommended
pad layout on last page
Microsemi
Scottsdale Division Page 1
Copyright © 2007
10-03-2007 REV E 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
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LA
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TIFIER
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WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6626US thru 1N6631US
1N6626US – 1N6631US
ELECTRICAL CHARACTERISTICS @ 25oC MAXIMUM
REVERSE
CURRENT IR @
VRWM
TYPE
NUMBER MINIMUM
BREAK-
DOWN
VOLTAGE
VR
IR = 50 μA
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
TA=25oC TA=150oC
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
trr
Note 1
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
trr
Note 2
PEAK
RECOVERY
CURRENT
IRM (rec)
IF = 2 A,
100 A/μs
Note 2
FORWARD
RECOVERY
VOLTAGE
VFRM Max
IF = 0.5 A
tr = 12 ns
V V @ A V @ A V μA μA ns ns A V
1N6626US 220 1.35V @ 1.2A 1.50V @ 4.0A 200 2.0 500 30 45 3.5 8
1N6627US 440 1.35V @ 1.2A 1.50V @ 4.0A 400 2.0 500 30 45 3.5 8
1N6628US 660 1.35V @ 1.2A 1.50V @ 4.0A 600 2.0 500 30 45 3.5 8
1N6629US 880 1.40V @ 1.0A 1.70V @ 3.0A 800 2.0 500 50 60 4.2 12
1N6630US 990 1.40V @ 1.0A 1.70V @ 3.0A 900 2.0 500 50 60 4.2 12
1N6631US 1100 1.60V @ 1.0A 1.95V @ 2.0A 1000 4.0 600 60 80 5.0 20
NOTE 1: Low Current Rev erse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, 100 A/μs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimu m voltage the device will exhibit at a specifi ed current.
VRWM Working Peak Reverse Voltage: The maximum peak vo ltage that can be applied over the oper ating
temperature range.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Reverse Current: The maximum reverse (leakage) current that will flo w at the specified voltage an d
temperature.
C Capacitance: The capacitanc e in pF at a frequency of 1 MHz and specified voltage.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery dec ay point after a peak
reverse current is reached.
CHARTS AND GRAPHS
FIGURE 1 FIGURE 2
Typical Forward Current Typical Forward Current
vs vs
Forward Voltage Forward Voltage
Microsemi
Scottsdale Division Page 2
Copyright © 2007
10-03-2007 REV E 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
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WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6626US thru 1N6631US
1N6626US – 1N6631US
FIGURE 3 FIGURE 4
Typical Reverse Current vs. Typical Reverse Current vs.
Applied Reverse Voltage Applied Reverse Voltage
10ms
FIGURE 5 FIGURE 6
Forward Pulse Current vs. Reverse Pulse Power vs.
Pulse Duration Pulse Duration
Microsemi
Scottsdale Division Page 3
Copyright © 2007
10-03-2007 REV E 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6626US thru 1N6631US
1N6626US – 1N6631US
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously PAD LAYOUT
been identified as “D-5B”
INCHES mm
A 0.288 7.32
B 0.070 1.78
C 0.155 3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
INCHES mm
MIN MAX MIN MAX
BL .205 .225 5.21 5.72
BD .137 .148 3.48 3.76
ECT .019 .028 0.48 0.711
S .003 --- 0.08 ---
Copyright © 2007
10-03-2007 REV E
