21 fo 1 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
teehS ataD
NESG2031M05
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
FEATURES
•The device is an ideal choice for low noise, high-gain at low current amplifications.
NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
•Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz
•High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
•Flat-lead 4-pin thin-type super minimold (M05) package
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
scp 05 A-50M1302GSEN 50M1302GSEN
(Non reel)
NESG2031M05-T1 NESG2031M05-T1-A
Flat-lead 4-pin thin-
type supper minimold
(M05, 2012 PKG)
(Pb-Free)
3 kpcs/reel
•8 mm wide embossed
taping
•Pin 3 (Collector), Pin 4
(Emitter) face the
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 13.0 V
Collector to Emitter Voltage VCEO 5.0 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation Ptot
Note 175 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg−65 to +150 °C
Note: Mounted on 1.08 cm2× 1.0 mm (t) glass epoxy PCB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
<R>
R09DS0035EJ0400
Rev. 4.00
Jun 20, 2012
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
NESG2031M05
21 fo 2 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
scitsiretcarahC CD
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 − − 100 nA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 − − 100 nA
DC Current Gain hFE
Note 1 VCE = 2 V, IC = 5 mA 130 190 260 −
scitsiretcarahC FR
Gain Bandwidth Product fT VCE = 3 V, IC = 20 mA, f = 2 GHz 20 25 −GHz
Insertion Power Gain S21e2VCE = 3 V, IC= 20 mA, f = 2 GHz 16.0 18.0 −dB
Noise Figure (1) NF VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
−0.8 1.1 dB
Noise Figure (2) NF VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
−1.3 −dB
Associated Gain (1) Ga VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
15.0 17.0 −dB
Associated Gain (2) Ga VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
−10.0 −dB
Reverse Transfer Capacitance Cre
Note 2 VCB = 2 V, IE = 0, f = 1 MHz −0.15 0.25 pF
Maximum Stable Power Gain MSG Note 3 VCE = 3 V, IC = 20 mA, f = 2 GHz 19.0 21.5 −dB
Gain 1 dB Compression Output
Power
PO (1 dB) VCE = 3 V, IC = 20 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
−13 −dBm
3rd Order Intermodulation
Distortion Output Intercept
Point
OIP3 VCE = 3 V, IC = 20 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
−23 −dBm
Notes: 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank FB/YFB
Marking T1H
hFE Value 130 to 260
S21
S12
<R>
<R>
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
NESG2031M05
21 fo 3 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
250
200
150
175
100
50
025 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
f = 1 MHz
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
0.2
0.1
0 2 4 6 8 10
V
CE
= 1 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
20
25
30
15
5
10
0 1 2 3 4 56
I
B
= 20 A
μ
120 A
μ
200 A
μ
140 A
μ
160 A
μ
180 A
μ
80 A
μ
60 A
μ
40 A
μ
100 A
μ
Remark The graph indicates nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
NESG2031M05
21 fo 4 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
Remark The graph indicates nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
NESG2031M05
21 fo 5 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
V
CE
= 1 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
35
5
10
15
20
25
30
010 0011
V
CE
= 2 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
35
5
10
15
20
25
30
010 0011
V
CE
= 3 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
35
5
10
15
20
25
30
010 0011
V
CE
= 1 V
I
C
= 20 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1 1 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 3 V
I
C
= 20 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1 1 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
I
C
= 20 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1 1 10 100
MAG
MSG
|S
21e
|
2
Remark The graph indicates nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
NESG2031M05
21 fo 6 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
V
CE
= 1 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 1 V
f = 3 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 2 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MSG
|S
21e
|
2
V
CE
= 1 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 1 V
f = 5 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
30
25
20
15
10
5
01 10 100
|S
21e
|
2
MAG
V
CE
= 2 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
Remark The graph indicates nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
NESG2031M05
21 fo 7 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
V
CE
= 2 V
f = 3 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MSG
|S
21e
|
2
V
CE
= 3 V
f = 3 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 5 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
30
25
20
15
10
5
01 10 100
|S
21e
|
2
MAG
V
CE
= 2 V
f = 5 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
30
25
20
15
10
5
01 10 100
|S
21e
|
2
MAG
Remark The graph indicates nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
NESG2031M05
21 fo 8 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
VCE = 3 V, f = 1 GHz
Icq = 20 mA (RF OFF)
20
15
10
5
0
–5
50
40
10
20
30
0
–30 –20 –15 –10 5–52–
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power Pout (dBm)
Collector Current IC (mA)
Pout
IC
VCE = 3 V, f = 3 GHz
Icq = 20 mA (RF OFF)
20
15
10
5
0
–5
50
40
10
20
30
0
–20 –10 –5 0 551–
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power Pout (dBm)
Collector Current IC (mA)
Pout
IC
VCE = 3 V, f = 2 GHz
Icq = 20 mA (RF OFF)
20
15
10
5
0
–5
50
40
10
20
30
0
–25 –15 –10 –5 002–
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power Pout (dBm)
Collector Current IC (mA)
Pout
IC
VCE = 3 V, f = 5.2 GHz
Icq = 20 mA (RF OFF)
20
15
10
5
0
–5
50
40
10
20
30
0
–15 –5 0 5 0101–
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power Pout (dBm)
Collector Current IC (mA)
Pout
IC
Remark The graph indicates nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
NESG2031M05
21 fo 9 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 1 V
f = 1 GHz
Ga
NF
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 2 V
f = 1 GHz
Ga
NF
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 1 V
f = 2 GHz
Ga
NF
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 2 V
f = 2 GHz
Ga
NF
6
5
3
2
1
4
0
12
2
4
6
8
10
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 1 V
f = 5.2 GHz
Ga
NF
6
5
3
2
1
4
0
12
2
4
6
8
10
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 2 V
f = 5.2 GHz
Ga
NF
Remark The graph indicates nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
NESG2031M05
21 fo 01 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 3 V
f = 1 GHz
Ga
NF
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 3 V
f = 2 GHz
Ga
NF
6
5
3
2
1
4
0
12
2
4
6
8
10
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 3 V
f = 5.2 GHz
Ga
NF
RemarkThe graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
NESG2031M05
21 fo 11 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
<R>
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
NESG2031M05
21 fo 21 egaP 00.4 .veR 0040JE5300SD90R
Jun 20, 2012
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm)
0.59±0.05
0.11
+0.1
–0.05
(Bottom View)
(0.65)0.65
1.30
2.0±0.1
4 3
1 2
1.25±0.1
2.05±0.1
0.30
+0.1
–0.05
(Top View)
Remark
( )
:
Reference value
0.5
(1.05)
T1H
PIN CONNENTION
1. Base
2. Emitter
3. Collector
4. Emitter
<R>
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NESG2031M05 Data Sheet
Description
Rev. Date Page Summary
− Sep 2004 − Previous No. : PU10189EJ03V0DS
p.1 Modification of ORDERING INFORMATION
p.2 Modification of ELECTRICAL CHARACTERISTICS
Modification of hFE CLASSIFICATION
p.11 Modification of S-PARAMETERS
4.00 Jun 20, 2012
p.12 Modification of PACKAGE DIMENSIONS
DISCONTINUED
