MAPRST2729-170M RADAR PULSED POWER TRANSISTOR 170 Wpk, 2700 - 2900 MHz, 100s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 03/30/2005 OUTLINE DRAWING FEATURES * Designed for ATC Radar Applications * NPN Silicon Microwave Power Transistor * Common Base Configuration * Broadband Class C Operation * High Efficiency Interdigitated Geometry * Diffused Emitter Ballasting Resistors * Gold Metallization System * Internal Input and Output Impedance Matching * Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 65 Emitter-Base Voltage VEBO 3.0 V IC 27 A Collector Current (Peak) Power Dissipation @ +25C V PD TBD W Storage Temperature TSTG -65 to +200 C Junction Temperature TJ 200 C ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Max Units BVCES 65 - V IC=50mA Test Conditions ICES - 15 mA VCE=36V RTH - .25 (TBD) C/W Power Output Pout 170 - Wpk VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Power Gain GP 8.5 - dB VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Collector Efficiency C 40 - % VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Input Return Loss RL 10 - dB VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Load Mismatch Stability VSWR-S - 1.5:1 - VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Load Mismatch Tolerance VSWR-T - 2:1 - VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz BROADBAND TEST FIXTURE IMPEDANCE F (MHz) Z IF () Z OF () 2700 (TBD) (TBD) 2800 (TBD) (TBD) 2900 (TBD) (TBD) M/A-COM, RF POWER INNOVATIONS * 1742 CRENSHAW BLVD * TORRANCE, CA 90501 (310) 320-6160 * FAX (310) 618-9191 M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE.